Patent classifications
H03M1/089
REFERENCE VOLTAGE GENERATING CIRCUIT METHOD OF GENERATING REFERENCE VOLTAGE AND INTEGRATED CIRCUIT INCLUDING THE SAME
A reference voltage generating circuit includes: an operational amplifier including a first input terminal connected to a first node and a second input terminal connected to a second node; a first transistor connected between a ground terminal and the first node, wherein a first current flows in the first transistor; a second transistor connected to the ground terminal; and a first variable resistor connected between the second transistor and the second node, wherein the first variable resistor has a first resistance value for adjusting the first current, based on a change in a current characteristic of the first transistor caused by a variation in a process of forming the first transistor. The reference voltage generating circuit provides a reference voltage, based on a voltage of the first node and a voltage across the first variable resistor.
Analog system and associated methods thereof
Methods and systems are provided for circuits. One method is for increasing device threshold voltage distribution of a plurality of devices of a circuit. The method includes adjusting a device threshold voltage of the plurality of devices by different amounts; and selecting a subset of the plurality of devices with adjusted device threshold voltage by a device selection module for performing a function associated with the circuit. In one aspect, a system for device threshold voltage adjustment is provided. The system includes a sensor module for sensing one or more of temperature and voltage values of a die having a plurality of devices for a circuit; and a threshold temperature and voltage compensation module for receiving an input value from the sensor module to compensate variation in a device threshold voltage caused by changes of one or more of temperature and voltage of the die.
TEMPERATURE SENSING CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE SAME
Provided herein may be a temperature sensing circuit and a semiconductor device having the same. The temperature sensing circuit may include an analog voltage generation circuit configured to convert a temperature into a voltage and output a temperature voltage, an analog-digital converter configured to convert the temperature voltage into a digital code, and a compensation circuit configured to adjust the digital code and then output an operation code to remove noise from the temperature voltage.
INDIRECT COMPARATOR OFFSET ESTIMATION
A system includes: a first device; and a second device coupled to the first device. The second device has a receiver. The receiver has a comparator and a controller. The comparator has an adjustment terminal. The controller has an input and an output. The output of the controller is coupled to the adjustment terminal of the comparator. The controller is configured to: obtain an offset estimation model; receive an input voltage at its input; determine a comparator offset responsive to the offset estimation model and the input voltage; and provide an adjustment control signal to its output responsive to the determined comparator offset.
Time-interleaved successive approximation analog to digital converter and calibration method thereof
Provided are a Time-Interleaved Successive Approximation Register Analog-to-Digital Converter, TISAR ADC, and a calibration method thereof. The calibration method for the TISAR ADC may include: sampling an analog signal input into the TISAR ADC to generate a reference digital signal (S130); according to the reference digital signal and output digital signals generated by analog-to-digital conversion sub-modules of the TISAR ADC, obtaining capacitor array calibration parameters and time delay calibration parameters of the analog-to-digital conversion sub-modules; adjusting capacitor arrays of the corresponding analog-to-digital conversion sub-modules according to the capacitor array calibration parameters, respectively; and adjusting time delays of the corresponding analog-to-digital conversion sub-modules according to the time delay calibration parameters, respectively.
CAPACITANCE VALUE MEASUREMENT METHOD AND DEVICE
A capacitance value measurement method and a capacitance value measurement device are provided. The capacitance value measurement method includes steps of: acquiring a first mapping relation; setting a standard temperature t0 of one analog-to-digital conversion circuit; and turning off all switching elements of a corresponding switching circuit other than an A.sup.th switching element, turning on the A.sup.th switching element, measuring a real-time temperature t of an analog-to-digital conversion sub-circuit of the analog-to-digital conversion circuit, measuring a real-time capacitance value Cn of an n.sup.th testing point, and acquiring a parasitic capacitance value of an external compensation sense line connected to the A.sup.th switching element at the real-time temperature t of the analog-to-digital conversion sub-circuit in accordance with the real-time capacitance value Cn and the first mapping relation, where A is a positive integer.
CMOS EXTERNALLY MODULATED LASER DRIVER
The present invention relates to telecommunication techniques and integrated circuit (IC) devices. In a specific embodiment, the present invention provides a laser deriver apparatus that includes a main DAC section and a mini DAC section. The main DAC section processes input signal received from a pre-driver array and generates an intermediate output signal. The mini DAC section provides a compensation signal to reduce distortion of the intermediate output signal. The intermediate output signal is coupled to output terminals through a cascode section and/or a T-coil section. There are other embodiments as well.
Analog system and associated methods thereof
Methods and devices are provided for circuits. One device includes an adjustment circuit having an adjustable resistor for modifying a resistance value of a resistive device, the adjustment circuit connected to an adjustment terminal of the resistive device. The resistance value of the adjustable resistor changes, when a voltage or charge on the adjustment terminal of the adjustable resistor is changed. The adjustable resistor is a phase change element with an adjusting terminal to which different voltage values are applied for adjusting a conversion device threshold value.
TEMPERATURE DRIFT COMPENSATION
A voltage reference circuit includes a bandgap circuit and a temperature compensation circuit. The temperature compensation circuit includes a first trim circuit, a second trim circuit, and a resistive digital-to-analog converter. The resistive digital-to-analog converter is coupled to the first trim circuit, the second trim circuit, and the bandgap circuit. The resistive digital-to-analog converter is configured to generate a temperature compensation voltage, and to provide the temperature compensation voltage to the bandgap circuit.
CMOS externally modulated laser driver
The present invention relates to telecommunication techniques and integrated circuit (IC) devices. In a specific embodiment, the present invention provides a laser deriver apparatus that includes a main DAC section and a mini DAC section. The main DAC section processes input signal received from a pre-driver array and generates an intermediate output signal. The mini DAC section provides a compensation signal to reduce distortion of the intermediate output signal. The intermediate output signal is coupled to output terminals through a cascode section and/or a T-coil section. There are other embodiments as well.