A memory device, a memory system, and corresponding methods are provided. The memory device includes a non-volatile random access memory. The non-volatile memory includes a suspect bit register configured to store addresses of bits that are determined to have had errors. The non-volatile memory further includes a bad bit register configured to store addresses of bits that both (i) appeared in the suspect bit register due to a first error and (ii) are determined to have had a second error. Hence, the memory device overcomes the aforementioned intrinsic write-error-rate by identifying the bad bits so they can be fused out, thus avoiding errors during use of the non-volatile random access memory.

A memory device, a memory system, and corresponding methods are provided. The memory device includes a non-volatile random access memory. The non-volatile memory includes a suspect bit register configured to store addresses of bits that are determined to have had errors. The non-volatile memory further includes a bad bit register configured to store addresses of bits that both (i) appeared in the suspect bit register due to a first error and (ii) are determined to have had a second error. Hence, the memory device overcomes the aforementioned intrinsic write-error-rate by identifying the bad bits so they can be fused out, thus avoiding errors during use of the non-volatile random access memory.

A memory device, a memory system, and corresponding methods are provided. The memory device includes a non-volatile random access memory. The non-volatile memory includes a suspect bit register configured to store addresses of bits that are determined to have had errors. The non-volatile memory further includes a bad bit register configured to store addresses of bits that both (i) appeared in the suspect bit register due to a first error and (ii) are determined to have had a second error. Hence, the memory device overcomes the aforementioned intrinsic write-error-rate by identifying the bad bits so they can be fused out, thus avoiding errors during use of the non-volatile random access memory.

A memory device, a memory system, and corresponding methods are provided. The memory device includes a non-volatile random access memory. The non-volatile memory includes a suspect bit register configured to store addresses of bits that are determined to have had errors. The non-volatile memory further includes a bad bit register configured to store addresses of bits that both (i) appeared in the suspect bit register due to a first error and (ii) are determined to have had a second error. Hence, the memory device overcomes the aforementioned intrinsic write-error-rate by identifying the bad bits so they can be fused out, thus avoiding errors during use of the non-volatile random access memory.

A device for interleaving/deinterleaving digital data delivered by processing elements (P0 . . . Pn-1) suitable for being used both with turbo-codes and with LDPC codes. The device includes memory banks (B0 . . . Bm-1) for storing data coming from or going to the processing elements, an interconnection network (INT) for directing the data between the processing elements and the memory banks, and a control unit (CTRL) for controlling the interconnection network and the memory banks. The control unit (CTRL) includes a calculation circuit (CAL) capable of the online generation of command words for the interconnection network and addressing and control sequences of the memory banks, ensuring conflict-free memory access on the basis of the interleaving rule to be applied, the size of the digital data frames, the number of processing units and memory banks, and the interconnection network.

A data processing circuit for performing a de-interleaving process in a DVB-T2 system is provided. The data processing circuit includes: a buffer, buffering a plurality of data symbols; a memory, coupled to the buffer; an address generator, generating a plurality of addresses according to an operation logic and a permutation rule, and selecting and outputting a target address from the addresses; and a memory controller, coupled to the memory, the buffer and the address generator, writing the target data into the memory according to the target address, or/and reading the target data from the memory according to the target address, until the data symbols are de-interleaved when the data symbols are read from the memory.

A time de-interleaving circuit is located at a signal receiver of a communication system to perform a time de-interleaving process on an interleaved signal. The interleaved signal includes a plurality of information units, which include a plurality of data units and a plurality of common units. The time de-interleaving circuit includes: a data unit access address generator, generating a plurality of data unit access addresses according to a first address sequence to accordingly access the plurality of data units in a memory; and a common unit access address generator, generating a plurality of common unit access addresses according to a second address sequence to accordingly access the plurality of common units in the memory. The second address sequence is a reverse sequence of the first address sequence.

A de-interleaving circuit that performs a time de-interleaving process on an interleaved block of an interleave signal includes: an input buffer, buffering multiple information units included in a time interleaved block; a writing address generator, generating multiple writing addresses according to a predetermined rule to write the information units buffered in the input buffer to a memory; a reading address generator, generating multiple reading addresses according to the predetermined rule to read the information units from the memory; and an output buffer, buffering the information units read from the memory. The information units are stored in multiple tiles of the memory. The tiles correspond to multiple regions of the time interleaved block, the multiple regions include a first region and a second region, and the dimensions of each tile in the first region are different from the dimensions of each tile in the second region.

According to an embodiment, an interleave circuit includes a reordering circuit and an address calculation circuit. The reordering circuit is configured to, for each cycle, receive in parallel input data containing n (n is an integer of 2 or more) bits, and reorder n-pieces of the input data input in n cycles into n-pieces of output data each containing n bits input in cycles different from each other. The address calculation circuit is configured to calculate write addresses for writing the n-pieces of output data into a first storage device and read addresses for reading out the n-pieces of output data from the first storage device.