Methods and devices to support multiple frequency bands in radio frequency (RF) circuits are shown. The described methods and devices are based on adjusting the effective width of a transistor in such circuits by selectively disposing matching transistors in parallel with the transistor. The presented devices and methods can be used in RF circuits including low noise amplifiers (LNAs), RF receiver front-ends or any other RF circuits where input matching to wideband inputs is required.

Radio communication circuits, radio transmitters, and methods are provided in this disclosure. The radio communication circuit may include a modulator configured to provide a first modulated signal including a carrier signal at a carrier frequency, and a second modulated signal including the carrier signal at the carrier frequency. The radio communication circuit may further include a phase shift generator configured to receive a first signal based on the first modulated signal and a second signal based on the second modulated signal. The phase shift generator of the radio communication circuit may further be configured to provide a predefined phase difference between the first signal and the second signal.

Envelope tracking (ET) voltage correction in a transmission circuit is provided. The transmission circuit includes a transceiver circuit and a power amplifier circuit(s). The transceiver circuit generates a radio frequency (RF) signal(s) from a time-variant modulation vector and the power amplifier circuit(s) amplifies the RF signal(s) based on a modulated voltage and provides the amplified RF signal(s) to a coupled RF front-end circuit. Herein, the transceiver circuit is configured to apply an equalization filter to a selected form of the time-variant modulation vector to compensate for a voltage distortion filter created across a modulation bandwidth of the RF signal(s) by coupling the power amplifier circuit with the RF front-end circuit. As a result, it is possible to reduce undesired instantaneous excessive compression and/or spectrum regrowth resulting from the voltage distortion filter to thereby improve efficiency and linearity of the power amplifier circuit(s) across the modulation bandwidth of the RF signal(s).

The present disclosure relates to an electronic device comprising a first capacitor and a quartz crystal coupled in series between a first node and a second node; an inverter coupled between the first and second nodes; a first variable capacitor coupled between the first node and a third node; and a second variable capacitor coupled between the second node and the third node.

Techniques are provided which may be implemented using various methods and/or apparatuses in a mobile device to address maximum permissible exposure (MPE) proximity sensor failure. A mobile device may include a maximum permissible exposure (MPE) sensor control unit to actively monitor signals associated with proper operation of the MPE proximity sensors. Upon detecting an anomaly in any of these signals, such as a value drop below a given threshold, an MPE sensor control Unit will inform an AP (application processor, or other processor or controller) which in turn trigger display of a warning message on the display of the mobile device or the issuance of other warnings such an audible or tactile alert to inform the end user about the maximum permissible exposure (MPE) proximity sensor malfunction and/or notify the end use of a condition resulting in deactivation of the 5G new radio transceiver.

A radio frequency module includes a module board; a first semiconductor device containing a first power amplifier and a second power amplifier; and a second semiconductor device containing a first switch, the first switch including a first terminal connected to the first power amplifier and a second terminal connected to the second power amplifier. In the radio frequency module, the first semiconductor device and the second semiconductor device are stacked together and disposed on the module board. An aspect of such a radio frequency module is that it is possible to achieve a compact form factor, although still provide RF transmit and receive capability. The RF module also includes external-connection terminals and a LNA, and the first semiconductor device and the low noise amplifier are disposed on mutually opposite surfaces of the module board.

Provided are a matching network, an antenna circuit and an electronic device. The matching network includes a first inductor, a second inductor, and a third inductor, the first inductor having two ends serving as a pair of output terminals, the second inductor having two ends serving as a first pair of input terminals, and the third inductor having two ends serving as a second pair of input terminals, where a first coupling coefficient between the first inductor and the second inductor is greater than a second coupling coefficient between the first inductor and the third inductor. According to the matching network, the matching network can present a rather large resistance value conversion ratio even with a rather small area taken by inductors, the circuit design can be more flexible, and the signal interference can be lowered.

A wireless single-phase AC-to-AC conversion circuit based on a 2.4G microwave includes a receiving antenna unit, a RF switch unit, a positive voltage rectification unit, a negative voltage rectification unit and an AC synthesis unit. An output port of the receiving antenna unit is connected to the common input port of the RF switch unit. A first microwave output end of the RF switch unit and a second microwave output end of the RF switch unit are correspondingly connected to a microwave input end of the positive voltage rectification unit and a microwave input end of the negative voltage rectification unit, respectively. ADC output end of the positive voltage rectification unit and a DC output end of the negative voltage rectification unit are correspondingly connected to a positive voltage input port of the AC synthesis unit and a negative voltage input port of the AC synthesis unit, respectively.

Solder bumps are placed in direct contact with the silicon substrate of an amplifier integrated circuit having a flip chip configuration. A plurality of amplifier transistor arrays generate waste heat that promotes thermal run away of the amplifier if not directed out of the integrated circuit. The waste heat flows through the thermally conductive silicon substrate and out the solder bump to a heat-sinking plane of an interposer connected to the amplifier integrated circuit via the solder bumps.

The systems and methods described herein are directed to techniques for improving battery life performance of end devices in resource monitoring systems which transmit data using low-power, wide area network (LPWAN) technologies. Further, the techniques include providing sensor interfaces in the end devices configured to communicate with multiple types of metrology sensors. Additionally, the systems and methods include techniques for reducing the size of a concentrator of a gateway device which receives resource measurement data from end devices. The reduced size of the concentrator results in smaller, more compact gateway devices that consume less energy and reduce heat dissipation experienced in gateway devices. The concentrator may comply with modular interface standards, and include two radios configured for transmitting 1-watt signals. Lastly, the systems and methods include techniques for fully redundant radio architecture within a gateway device, allowing for maximum range and minimizing downtime due to transmission overlap.