Patent classifications
H04B1/0475
Millimeter-wave isolation device
The present invention discloses a millimeter-wave isolation device, comprising a first isolated circuit and a second isolated circuit and further comprising a millimeter-wave transceiver. An output end of the first isolated circuit is connected to an input end of the millimeter-wave transceiver. An output end of the millimeter-wave transceiver is connected to an input end of the second isolated circuit. The first isolated circuit and the second isolated circuit are isolated by virtue of the millimeter-wave transceiver. By adopting a short distance transmission mode with millimeter-waves taken as carrier waves, a bandwidth can reach 200 kHz to 20 GHz, and a transmission speed can reach 100 kbps to 10 Gbps. The speed is high, whereby the millimeter-wave isolation device can be applicable to any scenario. A millimeter-wave carrier wave antenna is small, and through the antenna, either wireless transmission or signal isolation can be achieved.
Elastic wave device, high frequency front-end circuit, and communication apparatus
An elastic wave device includes an LiNbO.sub.3 substrate, a first elastic wave resonator including a first IDT electrode and a first dielectric film, and a second elastic wave resonator including a second IDT electrode and a second dielectric film. A Rayleigh wave travels along at least one surface of the elastic wave device. A thickness of the first dielectric film differs from a thickness of the second dielectric film. A propagation direction of an elastic wave in the first elastic wave resonator coincides with a propagation direction of an elastic wave in the second elastic wave resonator. Euler angles of the LiNbO.sub.3 substrate fall within a range of (0°±5°, θ, 0°±10°).
High-frequency apparatus
A high-frequency apparatus includes a first device and a second device, and a mounting substrate on which the first and second devices are mounted. At least the second device is an acoustic wave device including a piezoelectric substrate and a functional element. The first device and the second device are adjacent to or in a vicinity of each other on the mounting substrate. A coefficient of linear expansion of a substrate of the first device is lower than a coefficient of linear expansion of the mounting substrate, and a coefficient of linear expansion of the piezoelectric substrate of the second device is higher than the coefficient of linear expansion of the mounting substrate.
Cross-Communication Between Wireless Devices with Multiple Antennas
Systems, methods, and apparatuses, including electronic devices and computer-readable storage media, for adaptively switching wireless connections between antennas of a wearable electronic device and a host electronic device. One device includes a wearable electronic device with a first and second housing, each housing including two or more antennas. The wearable electronic device is configured to establish and monitor a wireless cross-link between two antennas in different housings, or between antennas in one housing and antennas of a host electronic device. The wearable electronic device can monitor the integrity of the wireless cross-link, and establish an updated cross-link in response to the wireless cross-link not meeting a predetermined integrity threshold. The wearable electronic device can monitor a wireless cross-head link between housings of a wearable electronic device at the same time as a wireless cross-body link between the wearable electronic device and the host electronic device.
Radio-frequency Power Amplifier with Amplitude Modulation to Phase Modulation (AMPM) Compensation
An electronic device may include wireless circuitry with a processor, a transceiver, an antenna, and a front-end module coupled between the transceiver and the antenna. The front-end module may include one or more power amplifiers for amplifying a signal for transmission through the antenna. A power amplifier may include a phase distortion compensation circuit. The phase distortion compensation circuit may include one or more n-type metal-oxide-semiconductor capacitors configured to receive a bias voltage. The bias voltage may be set to provide the proper amount of phase distortion compensation.
SELECTIVE SATELLITE SIGNAL MEASUREMENT
A satellite signal method includes: receiving a satellite signal at an apparatus; transmitting, from the apparatus, one or more outbound signals; and inhibiting processing, by the apparatus, of at least a first portion of the satellite signal spanning a first frequency set that includes at least a portion of an interference signal corresponding to transmission of the one or more outbound signals.
AMPLITUDE-TO-PHASE ERROR CORRECTION IN A TRANSCEIVER CIRCUIT
Amplitude-to-phase (AM-PM) error correction in a transceiver circuit is provided. The transceiver circuit is configured to generate a radio frequency (RF) signal from a time-variant input vector for transmission in one or more transmission frequencies. In embodiments disclosed herein, the transceiver circuit is configured to determine a phase correction term from the time-variant input vector and apply the determined phase correction term to the time-variant input vector to thereby correct an AM-PM error(s) in the RF signal. By correcting the AM-PM error(s) in the transceiver circuit, it is possible to prevent undesired amplitude distortion and/or spectrum regrowth in any of the transmission frequencies, particularly when the RF signal is modulated across a wide modulation bandwidth (e.g., ≥ 200 MHz).
PHASE AND AMPLITUDE ERROR CORRECTION IN A TRANSMISSION CIRCUIT
Phase and amplitude error correction in a transmission circuit is provided. The transmission circuit includes a transceiver circuit, a power management integrated circuit (PMIC), and a power amplifier circuit(s). The transceiver circuit generates a radio frequency (RF) signal(s) from an input vector, the PMIC generates a modulated voltage, and the power amplifier circuit(s) amplifies the RF signal(s) based on the modulated voltage. When the power amplifier circuit(s) is coupled to an RF front-end circuit, unwanted amplitude-amplitude (AM-AM) and amplitude-phase (AM-PM) errors may be created across a modulation bandwidth of the transmission circuit. In this regard, in embodiments disclosed herein, the input vector is equalized based on multiple complex filters to thereby cause the AM-AM and AM-PM errors to be corrected in the transmission circuit. As a result, it is possible to reduce undesired instantaneous excessive compression and/or spectrum regrowth across the modulation bandwidth of the transmission circuit.
ELECTRONIC DEVICE FOR ADJUSTING FREQUENCY OF REFERENCE SIGNAL USED TO GENERATE RF SIGNAL
An electronic device may include: an antenna; a radio frequency integrated circuit (RFIC) configured to: generate a first radio frequency (RF) signal in a first frequency band to be used in cellular communication by mixing a first baseband signal with a first reference signal, output the first RF signal to the antenna, receive, from the antenna, a second RF signal in a second frequency band to be used in the cellular communication, generate a second baseband signal by mixing the second RF signal with a second reference signal, and output the second baseband signal; and a processor is configured to: obtain, from the second baseband signal output by the RFIC, a control signal for establishing a communication channel between a base station and the electronic device, identify, from the control signal, a first condition for causing desense of the second RF signal, and based on the first condition being satisfied, adjust a frequency of the first reference signal.
Radio-frequency module and communication device
A radio-frequency module includes a module substrate. The module substrate includes a first principal surface; a second principal surface on a side of the module substrate that is opposite to the first principal surface; a third principal surface that is recessed toward the first principal surface from the second principal surface in a plan view of the second principal surface; a recessed region in which the third principal surface is a bottom surface; and a protruding region located on an outer periphery of the recessed region, in a plan view of the second principal surface, wherein the protruding region has a via conductor disposed therein, the via conductor extending in a direction perpendicular to the second principal surface and having an end exposed on the second principal surface.