There is provided in one embodiment an apparatus having an image sensor array. In one embodiment, the image sensor array can include monochrome pixels and color sensitive pixels. The monochrome pixels can be pixels without wavelength selective color filter elements. The color sensitive pixels can include wavelength selective color filter elements.

The present technology relates to a solid-state imaging device and an electronic apparatus that enable simultaneous acquisition of a signal for generating a high dynamic range image and a signal for detecting a phase difference.

The solid-state imaging device includes a plurality of pixel sets each including color filters of the same color, for a plurality of colors, each pixel set including a plurality of pixels. Each pixel includes a plurality of photodiodes PD. The present technology can be applied, for example, to a solid-state imaging device that generates a high dynamic range image and detects a phase difference, and the like.

The present technology relates to a solid-state imaging device and an electronic apparatus that enable simultaneous acquisition of a signal for generating a high dynamic range image and a signal for detecting a phase difference.

The solid-state imaging device includes a plurality of pixel sets each including color filters of the same color, for a plurality of colors, each pixel set including a plurality of pixels. Each pixel includes a plurality of photodiodes PD. The present technology can be applied, for example, to a solid-state imaging device that generates a high dynamic range image and detects a phase difference, and the like.

A pixel array includes pixel cells disposed in semiconductor material. Each of the pixel cells includes photodiodes, and a floating diffusion to receive image charge from the photodiodes. A source follower is coupled to the floating diffusion to generate an image signal in response image charge from the photodiodes. Drain regions of first and second row select transistors are coupled to a source of the source follower. A common junction is disposed in the semiconductor material between gates of the first and second row select transistors such that the drains of the first and second row select transistors are shared and coupled together through the semiconductor material of the common junction. The pixel cells are organized into a rows and columns with bitlines.

An image sensing device including optical filters adjacent to each other is disclosed. The image sensing device includes a substrate including first and second photoelectric conversion elements configured to generate photocharges corresponding to an intensity of incident light corresponding to a first color; a first pixel including a first optical filter disposed over the first photoelectric conversion element to selectively transmit the light corresponding to the first color; a second pixel including a second optical filter disposed over the second photoelectric conversion element to selectively transmit the light corresponding to the first color; and a first air layer disposed between the first optical filter and the first photoelectric conversion element to reflect light from the first optical filter.

A pixel array for a high definition (HD) image sensor is disclosed. The pixel array includes a number of split pixel cells each including a first photodiode and a second photodiode that is more sensitive to incident light than the first photodiode. The first photodiode can be used to sense bright or high intensity light conditions, while the second photodiode can be used to sense low to medium intensity light conditions. In the disclosed pixel array, the sensitivity of one or more photodiodes is reduced by application of a light attenuation layer over the first photodiode of each split pixel cell. In accordance with methods of the disclosure, the light attenuation layer can be formed prior to the formation of a metal, optical isolation grid structure. This can lead to better control of the thickness and uniformity of light attenuation layer.

An image capture device includes a plurality of independently formed camera channels. Each of the plurality of independently formed camera channels includes a respective lens that receives incident light and transmits the incident light to a respective sensor without transmitting the incident light to respective sensor of other camera channels within the plurality of independently formed camera channels. Further, a processor that is communicatively coupled to the respective sensor of each of the plurality of independently formed camera channels. The processor is configured to control an integration time of the respective sensor of each of the plurality of independently formed camera channels individually with the receive respective images from the respective sensor of each of the plurality of independently formed camera channels, and form a combined image by combing each of the respective images.

Color accuracy in an imaging device is improved.

An imaging element includes a plurality of pixels that acquires first information that is information of three primary colors and second information that is information of at least two colors different from the three primary colors and that includes at least one of complementary colors of the three primary colors.

A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

The invention relates to an image sensor apparatus of a camera for detecting light. The image sensor apparatus comprises at least a first and a second sensor element and a carrier medium, wherein the carrier medium has a first and second input coupling region and a first and second output coupling region, wherein the first input coupling region has a first deflection structure which input couples light at a first given wavelength into the carrier medium in the direction of the first output coupling region, wherein the second input coupling region has a second deflection structure which input couples light at a second given wavelength into the carrier medium in the direction of the second output coupling region, wherein the first output coupling region has a first output coupling deflection structure which output couples the transmitted light from the carrier medium onto the first sensor element and wherein the second output coupling region has a second output coupling deflection structure which output couples the light onto the second sensor element.