Provided is a reception apparatus that includes an information processing section configured to generate an image at least either in a first mode for reading out a whole captured region or in a second mode for reading out a partial region in the captured region. At the time of readout in the second mode, the image processing section varies a readout rate depending on the region.

Disclosed are aspects of a camera assembly, including a sensor for sampling image data in a sampling step. A lens is provided for focussing light onto the sensor. A window is supported in front of the lens. The window includes a transparency changing material for varying the transmittance of light through the window in response to an input signal. The camera assembly is configured to thereby increase the transmittance of light through the window during the sampling step of the sensor.

Disclosed are aspects of a camera assembly, including a sensor for sampling image data in a sampling step. A lens is provided for focussing light onto the sensor. A window is supported in front of the lens. The window includes a transparency changing material for varying the transmittance of light through the window in response to an input signal. The camera assembly is configured to thereby increase the transmittance of light through the window during the sampling step of the sensor.

An imaging device that can obtain imaging data corresponding to high-resolution images in a short period of time is provided. The imaging device includes a pixel including a photoelectric conversion element and n (n is an integer more than 2 inclusive) retention circuits. The photoelectric conversion element and the n retention circuits are stacked. One electrode of the photoelectric conversion element is electrically connected to the first to n-th retention circuits. The retention circuits include OS transistors with an extremely low off-state current feature, and can retain imaging data for a long time. In the first to n-th periods, the imaging device obtains the first to n-th imaging data and retains it in the first to n-th retention circuits. Then, the first to n-th imaging data retained in the first to n-th retention circuits are read out. The read imaging data is output outside the imaging data through AD conversion.

An image sensor is disclosed. The image sensor includes a plurality of pixels arranged in a plurality of rows and a plurality of columns, each of the pixels including: a photodiode; a floating diffusion node configured to accumulate photocharges generated from the photodiode; a first capacitor configured to store charges according to a voltage of the floating diffusion node which is reset; a second capacitor configured to store charges according to a voltage of the floating diffusion node in which the photocharges are accumulated; a first sampling transistor connected to a first output node and configured to sample charges to the first capacitor; a second sampling transistor connected to the first output node and configured to sample charges to the second capacitor; and at least one precharge select transistor connected to the first output node and configured to reset the first output node.

An image sensor is disclosed. The image sensor includes a plurality of pixels arranged in a plurality of rows and a plurality of columns, each of the pixels including: a photodiode; a floating diffusion node configured to accumulate photocharges generated from the photodiode; a first capacitor configured to store charges according to a voltage of the floating diffusion node which is reset; a second capacitor configured to store charges according to a voltage of the floating diffusion node in which the photocharges are accumulated; a first sampling transistor connected to a first output node and configured to sample charges to the first capacitor; a second sampling transistor connected to the first output node and configured to sample charges to the second capacitor; and at least one precharge select transistor connected to the first output node and configured to reset the first output node.

The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by the time ratio of the line time difference and the frame period. The TDI sensor further records defect pixels of a pixel array such that in integrating pixel data to integrators, the pixel data associated with the defect pixels is not integrated into corresponding integrators.

The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by the time ratio of the line time difference and the frame period. The TDI sensor further records defect pixels of a pixel array such that in integrating pixel data to integrators, the pixel data associated with the defect pixels is not integrated into corresponding integrators.

An electronic device includes a reset circuit and a first image sensing circuit. The reset circuit is used to receive a reset signal and includes a plurality of transistors. The first image sensing circuit is coupled to the reset circuit and includes a photodiode, a first transistor and a second transistor. The photodiode has a first terminal. The first transistor has a first terminal coupled to the first terminal of the photodiode, and a second terminal. The second transistor has a first terminal coupled to the second terminal of the first transistor, and a second terminal configured to receive a row selection signal.

A system and methods for implementing a transflective mirror as a rolling shutter sensor. The method includes. The method includes a controller setting a current state of an obfuscator to a transmissive state at a first point in time, the first point in time being a time when all pixels of an imaging sensor are in an active state. An imaging sensor then obtains an image of an object in a field of view of the imaging sensor. The image is obtained at a time when the obfuscator is in the transmissive state. The controller then sets the current state of the obfuscator to an obfuscative state at a point in time before a single pixel of the plurality of pixels is switched to an inactive state, wherein the active state of a pixel is a state in which a pixel is an active optical detector, and the inactive state is a state in which a pixel is not an active optical detector.