An imaging device includes: a photoelectric converter including first and second electrodes, a photoelectric conversion layer therebetween, and an electron-blocking layer between the first electrode and the photoelectric conversion layer; and a signal detection circuit connected to the first electrode. The photoelectric converter is adapted to be applied with a voltage between the first and second electrodes. An electron-blocking material in the electron-blocking layer has an ionization potential higher than both a work function of a conducting material in the first electrode and an ionization potential of a photoelectric conversion material in the photoelectric conversion layer, which allows the photoelectric converter to have a range of the voltage within which a density of current passing between the first and second electrodes when light is incident on the photoelectric conversion layer is substantially equal to that when no light is incident. The range of the voltage is 0.5 V or more.

To improve image quality in a solid-state imaging element that simultaneously performs exposure in all pixels.

Arranged in a pre-stage circuit are a pair of floating diffusion layers that converts transferred charges into a voltage, and a conversion efficiency control transistor that controls conversion efficiency with which the charges are converted into voltage by opening and closing a path between the pair of floating diffusion layers. First, second, third, and fourth capacitive elements have their respective one ends commonly connected to the pre-stage circuit. The selection circuit selects one of their respective other ends of the first, second, third, and fourth capacitive elements and connects the selected other end to a predetermined post-stage node. The post-stage circuit reads, via the post-stage node, a reset level obtained by amplifying the voltage when the pair of floating diffusion layers is initialized and a signal level obtained by amplifying the voltage when the charges are transferred.

To improve image quality in a solid-state imaging element that simultaneously performs exposure in all pixels.

Arranged in a pre-stage circuit are a pair of floating diffusion layers that converts transferred charges into a voltage, and a conversion efficiency control transistor that controls conversion efficiency with which the charges are converted into voltage by opening and closing a path between the pair of floating diffusion layers. First, second, third, and fourth capacitive elements have their respective one ends commonly connected to the pre-stage circuit. The selection circuit selects one of their respective other ends of the first, second, third, and fourth capacitive elements and connects the selected other end to a predetermined post-stage node. The post-stage circuit reads, via the post-stage node, a reset level obtained by amplifying the voltage when the pair of floating diffusion layers is initialized and a signal level obtained by amplifying the voltage when the charges are transferred.

An image sensor arrangement includes a first sensor layer having a first group of pixels. Each pixel of the first group includes a photodiode configured to detect electromagnetic radiation in a first wavelength range. The image sensor arrangement also includes a second sensor layer having a second group of pixels. Each pixel of the second group includes a photodiode configured to detect electromagnetic radiation in a second wavelength range. The image sensory arrangement further includes a readout layer having a readout circuit configured to read out electrical signals from the pixels of the first and the second group. The second sensor layer is arranged between the first sensor layer and the readout layer. The second wavelength range is outside a wavelength range detectable by the first sensor layer. The first sensor layer is attached to the second sensor layer by hybrid bonding.

An image sensor arrangement includes a first sensor layer having a first group of pixels. Each pixel of the first group includes a photodiode configured to detect electromagnetic radiation in a first wavelength range. The image sensor arrangement also includes a second sensor layer having a second group of pixels. Each pixel of the second group includes a photodiode configured to detect electromagnetic radiation in a second wavelength range. The image sensory arrangement further includes a readout layer having a readout circuit configured to read out electrical signals from the pixels of the first and the second group. The second sensor layer is arranged between the first sensor layer and the readout layer. The second wavelength range is outside a wavelength range detectable by the first sensor layer. The first sensor layer is attached to the second sensor layer by hybrid bonding.

An image processing apparatus has: an acquisition unit that acquires a first image captured by coded exposure in which a transfer unit is driven for n times, and acquires a second image captured by driving the transfer unit for m times (m<n); an image correction processing unit that generates a third image by performing blur correction processing on the first image; and an image comparison unit that evaluates a plurality of images including at least two of the first image, the second image and the third image, and selects an image of which evaluation is the highest among the plurality of images as an output image, or increases a weight for an image of which evaluation is highest among the plurality of images, relative to those of the other images when an output image is generated by combining the plurality of images.

There is provided in one embodiment an apparatus having an image sensor array. In one embodiment, the image sensor array can include monochrome pixels and color sensitive pixels. The monochrome pixels can be pixels without wavelength selective color filter elements. The color sensitive pixels can include wavelength selective color filter elements.

There is provided in one embodiment an apparatus having an image sensor array. In one embodiment, the image sensor array can include monochrome pixels and color sensitive pixels. The monochrome pixels can be pixels without wavelength selective color filter elements. The color sensitive pixels can include wavelength selective color filter elements.

There is provided a global shutter sensor including a pixel array and a processor. The pixel array acquires first pixel data corresponding to a first exposure period and second pixel data corresponding to a second exposure period of different pixel regions using time division or spatial division, wherein the first exposure period is shorter than the second exposure period. The processor calculates a difference between (the second exposure period/the first exposure period)?the first pixel data and the second pixel data to obtain parasitic light sensitivity of the different pixel regions, and determines gains and/or exposure periods corresponding to the different pixel regions to compensate the parasitic light sensitivity.

There is provided a global shutter sensor including a pixel array and a processor. The pixel array acquires first pixel data corresponding to a first exposure period and second pixel data corresponding to a second exposure period of different pixel regions using time division or spatial division, wherein the first exposure period is shorter than the second exposure period. The processor calculates a difference between (the second exposure period/the first exposure period)?the first pixel data and the second pixel data to obtain parasitic light sensitivity of the different pixel regions, and determines gains and/or exposure periods corresponding to the different pixel regions to compensate the parasitic light sensitivity.