An image sensor may include an array of image pixels. The array of image pixel may be coupled to control circuitry and readout circuitry. One or more image pixels in the array may each include a photodiode and a floating diffusion region. The floating diffusion region may be coupled to a charge storage structure for a low conversion gain configuration and can be coupled to a charge storage structure for a medium conversion gain configuration. The medium conversion gain charge storage structure may be activated when transferring photodiode charge to the floating diffusion region for a high conversion gain configuration. The control circuitry may control each pixel to perform a high conversion gain readout operation, a medium conversion gain readout operation, and a low conversion gain readout operation. If desired, the medium conversion gain readout operation may be omitted.

An image sensor may include an array of image pixels. The array of image pixel may be coupled to control circuitry and readout circuitry. One or more image pixels in the array may each include a photodiode and a floating diffusion region. The floating diffusion region may be coupled to a charge storage structure for a low conversion gain configuration and can be coupled to a charge storage structure for a medium conversion gain configuration. The medium conversion gain charge storage structure may be activated when transferring photodiode charge to the floating diffusion region for a high conversion gain configuration. The control circuitry may control each pixel to perform a high conversion gain readout operation, a medium conversion gain readout operation, and a low conversion gain readout operation. If desired, the medium conversion gain readout operation may be omitted.

Provided is an imaging unit including an imaging section that includes a pixel capable of performing charge accumulation a plurality of times in response to an imaging instruction for generating one frame of image data; a storage section that stores a pixel signal based on output from the pixel; an updating section that updates the pixel signal already stored in the storage section by performing an integration process to integrate the pixel signal output from the pixel as a result of a new charge accumulation and the pixel signal already stored in the storage section; and a control section that controls whether the updating section performs the update, for each of a plurality of pixel groups that each include one or more pixels.

Disclosed is an image sensor including: a center pixel group including 2x2 pixels having different colors in a center area of a 6x6 unit pixel group; and first to fourth color pixel groups having the same color as one pixel of the center pixel group, disposed as units of 2x4 pixels or 4x2 pixels to have a shape surrounding the center pixel group, and having different colors.

An image sensor includes unit pixels of a first pixel group sharing a first floating diffusion region and associated with a single color filter, and unit pixels of a second pixel group sharing a second floating diffusion region and associated with the single color filter. Control logic may generate an image by obtaining capacitance having a first value from the first floating diffusion region at a first time, and obtaining capacitance having a second value different from the first value from the second floating diffusion region at a second time following the first time. The first pixel group and the second pixel s group have different sensitivity levels.

A semiconductor image sensor includes a plurality of pixels. Each pixel of the sensor includes a semiconductor substrate having opposite front and back sides and laterally delimited by a first insulating wall including a first conductive core insulated from the substrate, electron-hole pairs being capable of forming in the substrate due to a back-side illumination. A circuit is configured to maintain, during a first phase in a first operating mode, the first conductive core at a first potential and to maintain, during at least a portion of the first phase in a second operating mode, the first conductive core at a second potential different from the first potential.

An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.

An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.

An apparatus includes a plurality of pixels and a plurality of microlenses. Each of the pixels has a first conversion unit and a second conversion unit surrounding the first conversion unit. The first conversion unit and the second conversion unit each have a light portion to receive light from a corresponding microlens. The first conversion unit and the second conversion unit are under the corresponding microlens. The pixels includes two or more pixels varying in an area ratio between an area of the light *portion of the first conversion unit and an area of the light portion of the second conversion unit.

An apparatus includes a plurality of pixels and a plurality of microlenses. Each of the pixels has a first conversion unit and a second conversion unit surrounding the first conversion unit. The first conversion unit and the second conversion unit each have a light portion to receive light from a corresponding microlens. The first conversion unit and the second conversion unit are under the corresponding microlens. The pixels includes two or more pixels varying in an area ratio between an area of the light *portion of the first conversion unit and an area of the light portion of the second conversion unit.