A method for processing signals collected by pixels of a detector, each pixel being able to collect a signal under the effect of radiation to which the detector is subjected comprises: identifying a pixel, termed the affected pixel, generating a signal greater than a threshold, defining at least one adjacent pixel of the affected pixel, and, for each adjacent pixel: selecting a first comparison group associated with the affected pixel and a second comparison group associated with the adjacent pixel, the first and second comparison groups not comprising any pixel in common, comparing signals collected by each comparison group so as to determine the comparison group that has accumulated the most significant amount of signal.

A method of providing blooming protection to a CMOS imager having a pixel array of a plurality of pixels arranged in rows and columns, where the CMOS imager is operable to capture high dynamic range images using a rolling shutter, is provided. Such a method can include reading out charge accumulated by the pixels in a readout row of a first integration time, applying a reset to the readout row for a reset time sufficient to allow readout and reset to occur in at least one subsequent row, and starting a second integration time of the pixels in the readout row, wherein the second integration time is shorter than the first integration time, and wherein the at least one subsequent row is a sufficient number of rows to have a combined reset to preclude blooming effects from the pixel array during the second integration time.

A solid-state imaging element includes a pixel section including a plurality of pixels that are arranged in a matrix and to perform photoelectric conversion, and circuitry to perform reading control on pixels in the pixel section, such that reading control is not performed on at least one pixel included in the pixel section.

An image sensor, which stores electric charge overflowing from a photoelectric conversion layer, includes: (1) a substrate including a first surface and a second surface, which is opposite to the first surface and upon which light is incident, (2) a photoelectric conversion layer in the substrate, (3) an isolation film disposed on the substrate, along the photoelectric conversion layer, (4) a storage conductive pattern disposed in the isolation film, (5) a transfer gate disposed on a first surface of the substrate, (6) a first impurity-injected area disposed between the photoelectric conversion layer and the isolation film, and (7) a second impurity-injected area disposed on the first surface of the substrate and connected to the transfer gate. The first and second impurity-injected areas are electrically connected.

An image sensor may include an image sensor pixel array, row control circuitry, and column readout circuitry. The array may include first and second sets of active pixels that are configured in different manners or controlled by the row control circuitry and column readout circuitry in different manners. The array may include optically black pixels that have photosensitive elements shield from incident light. The optically black pixels may be configured to generate first and second sets of black level signals adapted to both the first and second sets of active pixels. The corresponding sets of black level signals may be used to better reduce noise in corresponding sets of image signals generated by the first and second sets of active pixels.

A pixel circuit includes a photodiode, a floating diffusion, and a conduction gate channel of a multi-gate transfer block disposed in a semiconductor material layer. The multi-gate transfer block is coupled to the photodiode, the floating diffusion, and an overflow capacitor. The multi-gate transfer block also includes first, second, and third gates that are disposed proximate to the single conduction gate channel region. The conduction gate channel is a single region shared among the first, second, and third gates. Overflow image charge generated in the photodiode leaks from the photodiode into the conduction gate channel to the overflow capacitor in response to the first gate, which is coupled between the photodiode and the conduction gate channel, receiving a first gate OFF signal and the second gate, which is coupled between the conduction gate channel and the overflow capacitor, receiving a second gate ON signal.

A high dynamic range imaging pixel may include first and second photodiodes that generate charge in response to incident light. The second photodiode may have a higher sensitivity than the first photodiode. When generated charge in the first photodiode exceeds a given charge level, the charge may overflow through a transistor to a capacitor. The overflow path from the first photodiode to the capacitor may optionally pass through the floating diffusion region. A transistor may be coupled between the first and second photodiodes. A gain select transistor may be coupled between the floating diffusion region and the capacitor. After sampling the overflow charge, the charge from both the first and second photodiodes may be sampled. In one arrangement, overflow charge may be transferred to a capacitor in a subsequent row.

Image sensors having reduced dark current and white pixel are disclosed herein. In one embodiment, each pixel of the image sensor includes a photodiode (PD), a first floating diffusion (FD1) coupled to the photodiode through a transfer (TX) transistor, a second floating diffusion (FD2) coupled to the FD1 through a dual floating diffusion (DFD) transistor, and a lateral overflow integrating capacitor (LOFIC) coupled between the FD2 and a variable reference voltage (VCAP). A method for a correlated double sampling (CDS) readout includes: exposing a photodiode (PD) to light during an exposure period and increasing a capacitance of the LOFIC by setting the VCAP to a high voltage (H) level during an integration period of the exposure period.

A solid-state imaging device according to an embodiment includes a photoelectric conversion unit, a charge transfer unit configured to transfer a charge accumulated in the photoelectric conversion unit, a first charge modulation unit to which the charge is transferred from the photoelectric conversion unit by the charge transfer unit, a second charge modulation unit, a charge accumulation unit configured to accumulate a charge overflowing from the photoelectric conversion unit during an accumulation period, a modulation switching unit configured to couple or divide the first charge modulation unit and the second charge modulation unit, and a capacitance connection unit configured to couple or divide the second charge modulation unit and the charge accumulation unit, in which, in a state of the first charge modulation unit alone and a state where the first charge modulation unit and the second charge modulation unit are coupled by the modulation switching unit, the charge accumulated in the photoelectric conversion unit is modulated into a voltage signal, and voltage signals having different conversion efficiencies are continuously read, and the charge accumulated in the photoelectric conversion unit and the charge overflowing from the photoelectric conversion unit during the accumulation period are modulated into a voltage signal and the voltage signal is read in a capacitance obtained by coupling the first charge modulation unit, the second charge modulation unit, and the charge accumulation unit.

A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A transfer transistor is configured to transfer the image charge from the photodiode to a floating diffusion. A reset transistor coupled between a reset voltage source and the floating diffusion. A lateral overflow integration capacitor (LOFIC) includes an insulating region disposed between a first metal electrode and a second metal electrode. The first metal electrode is coupled to a bias voltage source, the second metal electrode is selectively coupled to the floating diffusion, and excess image charge photogenerated by the photodiode during an idle period is configured to overflow from the photodiode through the transfer transistor into the floating diffusion.