The present technology relates to a solid-state imaging device and an electronic device capable of improving a saturation characteristic. A photo diode is formed on a substrate, and a floating diffusion accumulates a signal charge read from the photo diode. A plurality of vertical gate electrodes is formed from a surface of the substrate in a depth direction in a region between the photo diode and the floating diffusion, and an overflow path is formed in a region interposed between a plurality of vertical gate electrodes. The present technology may be applied to a CMOS image sensor.

A photoelectric conversion reading part of a pixel includes a photoelectric conversion element for storing therein, in a storing period, charges generated by the photoelectric conversion, a transfer element for transferring, in a transfer period following the storing period, the charges stored in the photoelectric conversion element, an output node to which the charges stored in the photoelectric conversion element are transferred through the transfer element, a reset element for resetting, in a reset period, the output node to a predetermined potential, an output buffer part for converting the charges in the output node into a voltage signal at a level determined by the amount of the charges and outputting the voltage signal as the pixel signal, and an output voltage control part for controlling an output signal level of the pixel signal from the output buffer part to a controlled level determined by the operational state.

The present technology relates to an imaging device capable of preventing a decrease of sensitivity of the imaging device in a case where a capacitance element is provided in a pixel, a method of manufacturing an imaging device, and an electronic device. The imaging device includes, in a pixel, a photoelectric conversion element and a capacitance element accumulating an electric charge generated by the photoelectric conversion element. The capacitance element includes a first electrode including a plurality of trenches, a plurality of second electrodes each having a cross-sectional area smaller than a contact connected to a gate electrode of a transistor in the pixel, and buried in each of the trenches, and a first insulating film disposed between the first electrode and the second electrode in each of the trenches. The present technology can be applied, for example, to a backside irradiation-type CMOS image sensor.

The present technology relates to an imaging device capable of preventing a decrease of sensitivity of the imaging device in a case where a capacitance element is provided in a pixel, a method of manufacturing an imaging device, and an electronic device. The imaging device includes, in a pixel, a photoelectric conversion element and a capacitance element accumulating an electric charge generated by the photoelectric conversion element. The capacitance element includes a first electrode including a plurality of trenches, a plurality of second electrodes each having a cross-sectional area smaller than a contact connected to a gate electrode of a transistor in the pixel, and buried in each of the trenches, and a first insulating film disposed between the first electrode and the second electrode in each of the trenches. The present technology can be applied, for example, to a backside irradiation-type CMOS image sensor.

An imaging system may include an image sensor having an image sensor. The image sensor may include an image sensor pixel array coupled to row control circuitry and column readout circuitry. The image sensor pixel array may include a plurality of image sensor pixels. Each image sensor pixel may include a photosensitive element configured to generate charge in response to incident light, a first charge storage structure configured to accumulate an overflow portion of the generated charge for a low gain signal and a second charge storage structure configured to store a remaining portion of the generated charge for a high gain signal. Each image sensor pixel may also include a dedicated overflow charge storage structure interposed between the first charge storage structure and a floating diffusion region.

An image sensor (102) includes a photoelectric conversion unit (10) that generates a photoelectric charge, a sense node (SN) (21) that is connected to the photoelectric conversion unit (10) and holds the photoelectric charge generated by the photoelectric conversion unit (10), a discharge transistor (15) for discharging the photoelectric charge held by the sense node (SN) (21) to the outside, and a voltage control unit (114) that controls a voltage value of an off voltage to be applied to a gate of the discharge transistor (15) when the discharge transistor (15) is turned off.

An image sensor (102) includes a photoelectric conversion unit (10) that generates a photoelectric charge, a sense node (SN) (21) that is connected to the photoelectric conversion unit (10) and holds the photoelectric charge generated by the photoelectric conversion unit (10), a discharge transistor (15) for discharging the photoelectric charge held by the sense node (SN) (21) to the outside, and a voltage control unit (114) that controls a voltage value of an off voltage to be applied to a gate of the discharge transistor (15) when the discharge transistor (15) is turned off.

A photoelectric conversion device includes a plurality of unit pixels each including a charge holding portion to which charges are transferred from four or more photoelectric conversion units. Sensitivity of each photoelectric conversion unit of a first group to incident light is greater than sensitivity of each photoelectric conversion unit of a second group to the incident light. After charge accumulation is started in all the photoelectric conversion units of the second group, charge accumulation is started in the photoelectric conversion units of the first group. After signals corresponding to charges accumulated in all the photoelectric conversion units of the second group are read out, signals corresponding to charges accumulated in the photoelectric conversion units of the first group are read out.

A photoelectric conversion device includes a plurality of unit pixels each including a charge holding portion to which charges are transferred from four or more photoelectric conversion units. Sensitivity of each photoelectric conversion unit of a first group to incident light is greater than sensitivity of each photoelectric conversion unit of a second group to the incident light. After charge accumulation is started in all the photoelectric conversion units of the second group, charge accumulation is started in the photoelectric conversion units of the first group. After signals corresponding to charges accumulated in all the photoelectric conversion units of the second group are read out, signals corresponding to charges accumulated in the photoelectric conversion units of the first group are read out.

Anti-blooming control in overflow image sensor pixel. At least one example is an image sensor pixel comprising: a photodetector positioned in a semiconductor substrate; a gate oxide layer positioned on the semiconductor substrate; a floating diffusion; a transfer gate positioned on the gate oxide layer; a first anti-blooming implant positioned in the semiconductor substrate, wherein the first anti-blooming implant is coupled to the photodetector and the floating diffusion; and a second anti-blooming implant positioned in the semiconductor substrate, wherein the second anti-blooming implant is coupled to the photodetector and a voltage source contact.