An electronic circuit includes a unit pixel, a first clamp circuit, and a second clamp circuit. The unit pixel outputs a voltage having an output voltage level at a first output voltage level in a first time interval and at a second output voltage level in a second time interval different from the first time interval. The first clamp circuit is configured to clamp the output voltage level from the unit pixel to a first voltage level responsive to the first output voltage level being not greater than the first voltage level in the first time interval. The second clamp circuit is configured to clamp the output voltage level from the unit pixel to a second voltage level responsive to the second output voltage level being not greater than the second voltage level in the second time interval.

The present disclosure relates to a solid-state imaging device and an electronic device for suppressing deterioration of pixel characteristics while guaranteeing the operating range of VSLs. A solid-state imaging device according to a first aspect of this disclosure has multiple pixel sharing units each including multiple photoelectric conversion sections each configured to correspond to a pixel, an accumulation section configured to be shared by the plurality of photoelectric conversion sections and to accumulate charges generated thereby, and multiple transistors configured to control reading of the charges accumulated in the accumulation section. The plurality of transistors in each pixel sharing unit are arranged symmetrically. The plurality of transistors include a transistor that functions as a switch to change conversion efficiency. The present disclosure may be applied to back-illuminated CMOS image sensors, for example.

An image sensor includes a pixel array including a first pixel and a second pixel which are connected to a first column line, and a row driver configured to control a read operation of the second pixel. A voltage of the first column line is determined based on a higher voltage among a voltage of a floating diffusion node of the first pixel and a voltage of a floating diffusion node of the second pixel during the read operation of the second pixel.

An imaging device includes pixels arranged to form columns and each including a photoelectric conversion unit that generates charges by photoelectric conversion, column circuits provided to the columns, respectively, and each receiving a signal from a part of the pixels, a first common control line connected to each of the column circuits, and a control unit that controls the column circuits. Each of the column circuits includes an amplifier circuit whose gain is switchable and a first transistor that controls a current flowing in the amplifier circuit, and the control unit controls the column circuit so that the first transistor supplies a current of a first current value when the amplifier circuit is at a first gain and the first transistor supplies a current of a second current value different from the first current value when the amplifier circuit is at a second gain different from the first gain.

A photoelectric conversion apparatus includes a photoelectric conversion element including a pixel area where a plurality of pixels composed of avalanche photodiodes for photoelectrically converting an optical image is two-dimensionally arranged, the photoelectric conversion element being configured to simultaneously read signals from a first pixel group and a second pixel group in the pixel area, at least one processor, and a memory coupled to the at least one processor, the memory storing instructions that, when executed by the at least one processor, cause the at least one processor to generate an image based on the read signals, acquire characteristic information regarding crosstalk between the plurality of pixels, generate correction information based on the characteristic information, and perform a correction process on the image using the correction information. Correction information different between the first and second pixel groups is generated.

A photoelectric conversion apparatus includes a photoelectric conversion element including a pixel area where a plurality of pixels composed of avalanche photodiodes for photoelectrically converting an optical image is two-dimensionally arranged, the photoelectric conversion element being configured to simultaneously read signals from a first pixel group and a second pixel group in the pixel area, at least one processor, and a memory coupled to the at least one processor, the memory storing instructions that, when executed by the at least one processor, cause the at least one processor to generate an image based on the read signals, acquire characteristic information regarding crosstalk between the plurality of pixels, generate correction information based on the characteristic information, and perform a correction process on the image using the correction information. Correction information different between the first and second pixel groups is generated.

An image capturing apparatus including a pixel portion in which pixels that convert entered light into electric signals are arranged in a matrix, a column output line provided for each pixel column of the pixel portion, a clip portion configured to clip, at a predetermined signal level, signals respectively output from the pixels to the column output lines, an A/D conversion portion configured to A/D convert the signals clipped by the clip portion, and a control unit configured to change a signal level at which clipping is performed by the clip portion according to a maximum value of a conversion range of the A/D conversion portion.

An imaging pixel to mitigate cross-talk effects comprises a voltage supply node to receive a supply voltage, and an output node to provide a pixel output signal. The imaging pixel further comprises a photosensitive element, and a source follower transistor having a control node coupled to the photosensitive element. The source follower transistor is interposed between the voltage supply node and the output node. The imaging pixel comprises a clamping circuit being interposed between the voltage supply node and the output node.

An imaging pixel to mitigate cross-talk effects comprises a voltage supply node to receive a supply voltage, and an output node to provide a pixel output signal. The imaging pixel further comprises a photosensitive element, and a source follower transistor having a control node coupled to the photosensitive element. The source follower transistor is interposed between the voltage supply node and the output node. The imaging pixel comprises a clamping circuit being interposed between the voltage supply node and the output node.

A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.