A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

A solid-state image taking device including a pixel section and a scan driving section wherein on each pixel column included in the pixel area determined in advance to serve as a pixel column having the unit pixels laid out in the scan direction, the opto-electric conversion section and the electric-charge holding section are laid out alternately and repeatedly, and on each of the pixel columns in the pixel area determined in advance, two the electric-charge holding sections of two adjacent ones of the unit pixels are laid out disproportionately toward one side of the scan direction with respect to the optical-path limiting section or the opto-electric conversion section.

A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

A solid-state image sensor comprises a pixel array in which a plurality of pixels are two-dimensionally arranged, and a plurality of column signal processing circuits which read out signals from the pixel array via a plurality of column signal lines arranged in correspondence with respective columns of the pixel array, wherein signals of the pixels of different colors in the pixel array are read out by the plurality of column signal processing circuits during a single period, and wherein at least the column signal processing circuits which process signals of the pixels of different colors, of the plurality of column signal processing circuits, are driven via conductive lines which are separated from each other in a region where at least the column signal processing circuits which process signals of the pixels of different colors are arranged.

Provided are a solid-state image sensor and an electronic information device capable of effectively reducing the occurrence of pseudo-smear by adopting a simple configuration and operation. A solid-state image sensor 1 includes multiple pixel circuit units P.sub.N and P.sub.OB, each including a photoelectric conversion unit that generates charges via photoelectric conversion and accumulates the generated charges, a floating diffusion unit that retains charges transferred from the photoelectric conversion unit, a transfer unit through which charges accumulated by the photoelectric conversion unit are transferred to the floating diffusion unit, an output unit that outputs a signal corresponding to the amount of charges retained by the floating diffusion unit, and a reset unit that discharges charges retained by the floating diffusion unit to the outside; and an A/D conversion unit 23 that acquires a signal output from the output unit and performs A/D conversion on the acquired signal using a set gain. At least one of the pixel circuit units P.sub.N and P.sub.OB is configured such that charges transferred from the photoelectric conversion unit to the floating diffusion unit and retained by the floating diffusion unit are limited so as not to exceed an upper limit amount which is set to be smaller by the extent of an increase in the gain.

A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

An image pickup apparatus configured to output an image signal based on an optical signal photoelectrically converted by an image pickup element provided with two-dimensionally arranged pixels includes: a clipper configured to limit output voltage of the image signal based on the optical signal; a gain upper limit setter configured to set a gain upper limit to be applied to the optical signal; a determiner configured to determine whether or not a condition to cause occurrence of a smear in a shot image is satisfied; and a controller configured to limit an output voltage of the optical signal by using the clipper when the determiner determines that the condition to cause occurrence of the smear is satisfied, and to inactivate limitation of the output voltage of the optical signal by using the clipper when the determiner determines that the condition to cause occurrence of the smear is not satisfied.

A photoelectric conversion apparatus includes a photoelectric conversion element including a pixel area where a plurality of pixels composed of avalanche photodiodes for photoelectrically converting an optical image is two-dimensionally arranged, the photoelectric conversion element being configured to simultaneously read signals from a first pixel group and a second pixel group in the pixel area, at least one processor, and a memory coupled to the at least one processor, the memory storing instructions that, when executed by the at least one processor, cause the at least one processor to generate an image based on the read signals, acquire characteristic information regarding crosstalk between the plurality of pixels, generate correction information based on the characteristic information, and perform a correction process on the image using the correction information. Correction information different between the first and second pixel groups is generated.

A photoelectric conversion apparatus includes a photoelectric conversion element including a pixel area where a plurality of pixels composed of avalanche photodiodes for photoelectrically converting an optical image is two-dimensionally arranged, the photoelectric conversion element being configured to simultaneously read signals from a first pixel group and a second pixel group in the pixel area, at least one processor, and a memory coupled to the at least one processor, the memory storing instructions that, when executed by the at least one processor, cause the at least one processor to generate an image based on the read signals, acquire characteristic information regarding crosstalk between the plurality of pixels, generate correction information based on the characteristic information, and perform a correction process on the image using the correction information. Correction information different between the first and second pixel groups is generated.

A photoelectric conversion apparatus includes a photoelectric conversion element including a pixel area where a plurality of pixels composed of avalanche photodiodes for photoelectrically converting an optical image is two-dimensionally arranged, the photoelectric conversion element being configured to simultaneously read signals from a first pixel group and a second pixel group in the pixel area, at least one processor, and a memory coupled to the at least one processor, the memory storing instructions that, when executed by the at least one processor, cause the at least one processor to generate an image based on the read signals, acquire characteristic information regarding crosstalk between the plurality of pixels, generate correction information based on the characteristic information, and perform a correction process on the image using the correction information. Correction information different between the first and second pixel groups is generated.