Provided is a solid-state imaging element with which it is possible to minimize crosstalk between different pixel columns while suppressing a decrease in quantum efficiency of a photoelectric conversion unit due to a pixel separating section. The solid-state imaging element includes a plurality of pixels arranged in a two-dimensional matrix in the X direction and the Y direction and including a photoelectric conversion unit (N-type semiconductor thin film) containing a compound semiconductor. In addition, the solid-state imaging element includes a pixel separating section disposed only at a pixel boundary extending in the X direction.

A method of correcting errors in the output of an image detector is disclosed. The method comprises measuring an output signal (V.sub.m) of a capacitor (C.sub.sh) holding a voltage corresponding to a signal detected by the image detector; comparing the value of output signal (V.sub.m) to the value of the previously measured output signal (V.sub.m−1) of the capacitor (C.sub.sh); calculating the error in the output signal (V.sub.m) using a predetermined correction factor and the difference between the value of the output signal (V.sub.m) and the value of the previously measured output signal (V.sub.m−1); and providing a corrected output value (V.sub.crt) in accordance with the calculated error. Detectors, methods of calibrating detectors, image correction apparatus and guidance systems comprising the detectors are also disclosed.

An embodiment provides an imaging device including a pixel that includes a first photoelectric conversion portion, a second photoelectric conversion portion, a first transfer transistor, a second transfer transistor, and a floating diffusion portion. The first transfer transistor transfers a signal charge in the first photoelectric conversion portion to the floating diffusion portion. The second transfer transistor transfers a signal charge in the second photoelectric conversion portion to the floating diffusion portion. A potential at the first photoelectric conversion portion for the signal charge is higher than a potential at the second photoelectric conversion portion for the signal charge.

A solid-state image pick-up apparatus of an example includes a photoelectric conversion portion, a transfer transistor configured to transfer a charge in the photoelectric conversion portion, and a signal output circuit configured to supply selectively a first voltage to turn on the transfer transistor and a second voltage to turn off the transfer transistor to the transfer transistor. The signal output circuit is configured to supply the second voltage having a voltage value selected from two or more different voltage values based on an output signal from a pixel.

An image pixel may include a photodiode, storage node, floating diffusion, and capacitor. A first transistor may be coupled between the photodiode and the storage node. A second transistor may be coupled between the storage node and the floating diffusion. A third transistor may be coupled between the capacitor and the floating diffusion. A potential barrier may be formed between the storage node and the capacitor. The potential barrier may exhibit a potential that is between the potential of the photodiode and the potential of the charge storage node. The potential barrier may transfer an overflow portion of image charge from the storage node to the capacitor. The third transistor may transfer the overflow charge from the capacitor to the floating diffusion. The capacitor may shield the storage node from image light or may reflect at least some of the image light towards the photodiode.

A radiation therapy system is configured with fast readout of X-ray images with significantly reduced image lag. A reset phase is included in the process of acquiring an X-ray image to reduce image lag in a subsequently acquired X-ray image. During the reset phase, residual charge is concurrently transferred from multiple arrays of pixel detector elements in an X-ray detector panel. As a result, image lag present in a subsequent X-ray image is minimized or otherwise reduced.

A method of driving a unit pixel may include activating a transfer signal prior to an activation of a reset signal to boost a floating diffusion node of the unit pixel, during a first section of a photodiode reset period; and activating a reset signal using a hard reset, during a second section of the photodiode reset period.

An array sensor and a method for forming and operating the same are provided. The array sensor includes: a sensor circuit including an array of pixel units that includes N rows of pixel units; and a driving circuit including at least N rows of shifting units; where the driving circuit further includes: a first global clearing signal line connected with odd rows of shifting units, a signal of which being applied to trigger the odd rows of shifting units to simultaneously turn on odd rows of pixel units, so that the odd rows of pixel units simultaneously discharge residual charge; and a second global clearing signal line connected with even rows of shifting units, a signal of which being applied to trigger the even rows of shifting units to simultaneously turn on even rows of pixel units, so that the even rows of pixel units simultaneously discharge residual charge.

A pixel arrangement includes a photodiode, a reset transistor configured to be controlled by a reset signal and coupled to a reset input voltage, a transfer gate transistor configured to transfer charge from the photodiode to a node, wherein the transfer gate transistor is controlled by a transfer gate voltage, and a source follower transistor controlled by the voltage on the node and coupled to a source follower voltage. A capacitor is coupled between the node and an input voltage. During a read operation the input voltage is increased to boost the voltage at the node. The increased input voltage may, for example, be one the reset input voltage, said source follower voltage, said transfer gate voltage and a boosting voltage.

Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.