In an embodiment, an image sensor includes: first and second voltage rails; first and second regulators configured to generate first and second regulated voltage at the first and second voltage rails, respectively; and a plurality of pixels coupled to the first and second voltage rails. Each pixel includes: first and second transistor coupled first and second storage capacitor, respectively. A third transistor is coupled between a control terminal of the first transistor and the first or second voltage rails. The third transistor is configured to limit a slew rate of current flowing between the control terminal of the second transistor and the first or second voltage rails to a first slew rate when the image sensor operates in global shutter mode, and to a second slew rate when the image sensor operates in rolling mode, the first slew rate being smaller than the second slew rate.

An organic photoelectric film on a substrate may perform photoelectric conversion of incident light. Pixel electrodes are arranged in a matrix form in an X-axis direction and a Y-axis direction between the substrate and the organic photoelectric film. A driving circuit may read pixel information from each pixel electrode of a pixel electrode line including a plurality of pixel electrodes arranged in the X-axis direction, and applies an on-voltage or an off-voltage to each pixel electrode 40 of the pixel electrode line. The driving circuit may scan a photoelectric conversion ON region to which the on-voltage is applied in the −Y-axis direction in synchronization with a timing of scanning a read line to which the pixel information is read in the −Y-axis direction.

A radiation therapy system is configured with fast readout of X-ray images with significantly reduced image lag. A reset phase is included in the process of acquiring an X-ray image to reduce image lag in a subsequently acquired X-ray image. During the reset phase, residual charge is concurrently transferred from multiple arrays of pixel detector elements in an X-ray detector panel. As a result, image lag present in a subsequent X-ray image is minimized or otherwise reduced.

An imaging device supplies a first constant potential and a second constant potential to a photodiode through a first line and a second line to put the photodiode in a reverse-bias state. The imaging device reads a signal corresponding to the potential at the other end of the photodiode changed by light incident on the photodiode in the reverse-bias state. The imaging device supplies a potential that changes with time to a capacitive element through a control line so that a forward current flows through the photodiode disposed between the capacitive element and the first line after reading the signal.

A moving image processing apparatus is configured to extract position information of a saturation region from a first frame, the saturation region including pixels each having at least a threshold pixel value that is associated with an afterimage being formed in a subsequent frame elapsed from the first frame. The moving image processing apparatus is configured to extract an afterimage region corresponding to the saturation region from the second frame, calculate motion information of the afterimage region based on motion information indicating motion between a second frame and a third frame, extract a candidate region that is matched to the afterimage region in the third frame based on the motion information, and correct the afterimage region based on the candidate region data.

An image processing device includes a image processor that reads out image data which is captured by an imaging element and transferred to a memory and on which optical noise is superimposed, as region image data for each of a plurality of divided regions of the memory, and that reads out data of a predetermined region again after reading for each region image data is finished, and an display processor that outputs corrected image data obtained by correcting captured image data for each of the plurality of regions in accordance with optical noise decided in accordance with the data read out again by the image processor, the captured image data being captured by the imaging element and stored in the memory.

Implementations of a pixel may include at least one photodiode coupled with a floating diffusion; a first metal-insulator-metal (MIM) capacitor including a first electrode and a second electrode; and a second MIM capacitor coupled in parallel with the first MIM capacitor, the second MIM capacitor including a first electrode and a second electrode. The first MIM capacitor and second MIM capacitor may be coupled with the floating diffusion.

A solid-state image pickup device according to an embodiment is a solid-state image pickup device including a first pixel row, a second pixel row, and a third pixel row that are arranged in a horizontal direction. In the solid-state image pickup device, a first control pulse for transferring charges of first accumulation portions of the fourth and sixth CCD registers in a vertical direction perpendicular to the horizontal direction and a second control pulse for transferring charges of second accumulation portions of the fourth and sixth CCD registers in the horizontal direction are input to the fourth and sixth CCD registers such that an Hi period of the first control pulse and an Hi period of the second control pulse do not overlap each other in a timing period in which charges accumulated in the first, second, and third pixel rows are transferred.

An image sensor, comprises: a pixel area that includes first and second pixel groups each constituted by a plurality of pixels; first and second output channels that output image signals obtained from the first and second pixel groups, respectively; and a driver that performs drive according to a first drive method in which the first pixel group is alternately exposed in a medium exposure period and a short exposure period in a first cycle so that a first and second image signals are read out, and in which the second pixel group is exposed in a long exposure period in a second cycle longer than the first cycle so that a third image signal is read out. The reading out of the third image signal and reading out of the first or the second image signal are performed in parallel.

An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount Q.sub.PD generated by the photoelectric converter during one exposure period, a saturation charge amount Q.sub.MEM_SAT of the first holding portion, and the maximum charge amount Q.sub.GS that can be held in the potential well are in a relationship of: Q.sub.PD<Q.sub.GSQ.sub.MEM_SAT.