An HDR imaging apparatus include: a deinterlacing circuit configured to generate a high-exposure Bayer frame and low-exposure Bayer frame by deinterlacing an interlace Bayer raw frame in which a high-exposure region and low-exposure region are interlaced; a demosaicing circuit configured to convert the high-exposure Bayer frame and the low-exposure Bayer frame into a high-exposure RGB frame and low-exposure RGB frame, respectively; a reconstructing circuit configured to remove interlace artifacts and noise from the high-exposure RGB frame and the low-exposure RGB frame, using joint dictionaries generated through joint dictionary learning on training data sets each containing a plurality of bases, but the corresponding bases have different values; and an HDR generation circuit configured to generate an HDR image frame by combining the high-exposure RGB frame and the low-exposure RGB frame from which interlace artifacts and noise were removed by the reconstructing circuit.

A charge generated in a single photoelectric conversion unit during a certain period is stored in a first charge storing unit, and a charge generated in the single photoelectric conversion unit during a different period is stored in a second charge storing unit, and then a third transferring unit is set to on-state to transfer the charge to a floating diffusion, and then, in a state where the charge transferred to the floating diffusion is stored, a fourth transferring unit is set to on-state.

A control unit corrects a lag component, which is included in offset image data in a state in which radiation is not emitted for a period from the end of a first imaging operation of generating second radiographic image data in a state in which the radiation is emitted and to the start of a second imaging operation of generating the second radiographic image data in the state in which the radiation is emitted and at each of a plurality of different times elapsed since the first imaging operation, on the basis of a combination of the correction image data and the time elapsed since the first imaging operation, lag component time change information, and a time from the end of the first imaging operation to the start of the second imaging operation, and corrects the second radiographic image data using the corrected offset image data.

A solid-state imaging device according to an embodiment of the disclosure includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

There is provided an image capturing apparatus. An image capturing control unit acquires a first image and a second image that require different time periods to read out electrical charge that accumulates due to exposure. A display control unit controls display of an image that is read out from an image sensor on a display unit. The second image has a lower resolution and requires a shorter time period for readout than the first image. The display control unit, when causing the display unit to cyclically display the first image and the second image, sets a first time period from readout of the second image to display start of the second image on the display unit, based on a difference between the time period to read out the first image and the time period to read out the second image.

A photoelectric conversion device includes a plurality of pixels each of which includes a photoelectric converter that generates charges by photoelectric conversion, a first transfer unit that transfers charges in the photoelectric converter to a first holding portion, a second transfer unit that transfers charges in the first holding portion to a second holding portion, an amplifier unit that outputs a signal based on charges held in the second holding portion, and a third transfer unit that transfers charges of the photoelectric converter to a drain portion; and a control unit that, in an exposure period in which signal charges are accumulated in the photoelectric converter, changes a potential barrier formed by the third transfer unit with respect to the signal charges accumulated in the photoelectric converter from a first level to a second level that is higher than the first level.

An image sensor pixel may include a photodiode that generates first charge for a first frame and second charge for a second frame, first and second storage gates coupled to the photodiode, a floating diffusion coupled to the first storage gate through a first transistor, a second transistor coupled to the second storage gate, and a capacitor coupled to the floating diffusion through a third transistor. The image sensor pixel may output image signals associated with the first charge generated by the photodiode for the first image frame while the photodiode concurrently generates the second charge for the second image frame. The second storage gate may be used to store overflow charge. Overflow charge for the second frame may be stored at the second storage gate while image signals associated with the first image frame are read out from capacitor and the floating diffusion.

A solid-state imaging device includes a plurality of pixels in a two-dimensional array. Each pixel includes a photoelectric conversion element that converts incident light into electric charge, and a charge holding element that receives the electric charge from the photoelectric conversion element, and transfers the electric charge to a corresponding floating diffusion. The charge holding element further includes a plurality of electrodes.

A high dynamic range imaging sensor includes a pixel array of pixel cells, a readout circuitry, a function logic and a control circuitry. Each pixel cell comprises one of a normal pixel and a base pixel, and each M rows by N columns pixels defines a pixel subarray. Each pixel subarray includes at least three normal pixels and at least one base pixel. The readout circuitry is coupled to read image data out from a plurality of pixels of the pixel array. The readout circuitry includes an Analog-to-Digital Converter associated to respective readout column. The function logic is coupled to receive the digital image data from the readout circuitry. The control circuitry is coupled to receive exposure levels from the function logic and to output each applied exposure level assigned to respective pixel subarray of the pixel array to control an exposure time of each pixel.

A high dynamic range imaging sensor includes a pixel array of pixel cells, a readout circuitry, a function logic and a control circuitry. Each pixel cell comprises one of a normal pixel and a base pixel, and each M rows by N columns pixels defines a pixel subarray. Each pixel subarray includes at least three normal pixels and at least one base pixel. The readout circuitry is coupled to read image data out from a plurality of pixels of the pixel array. The readout circuitry includes an Analog-to-Digital Converter associated to respective readout column. The function logic is coupled to receive the digital image data from the readout circuitry. The control circuitry is coupled to receive exposure levels from the function logic and to output each applied exposure level assigned to respective pixel subarray of the pixel array to control an exposure time of each pixel.