An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount Q.sub.PD generated by the photoelectric converter during one exposure period, a saturation charge amount Q.sub.MEM_SAT of the first holding portion, and the maximum charge amount Q.sub.GS that can be held in the potential well are in a relationship of: Q.sub.PD<Q.sub.GSQ.sub.MEM_SAT.

The present disclosure relates to a solid state image sensor capable of reducing signal mixture due to electric capacitive coupling between adjacent pixels, a method for manufacturing the same, and an electronic device.

A first pixel and a second pixel are adjacently arranged in the solid state image sensor. Each of the first pixel and the second pixel has a photoelectric conversion film for photoelectrically converting an incident light, and a lower electrode arranged below the photoelectric conversion film, and another electrode different from the lower electrodes is provided between the lower electrodes of the first pixel and the second pixel. The present disclosure is applicable to solid state image sensors and the like, for example.

In an imaging device that includes an imaging lens including n number of optical systems of which imaging characteristics are different and an image sensor including m number of light receiving sensors of which combinations of crosstalk ratio and light sensitivity are different in each pixel, m number of primary image data items are generated by obtaining image signals output from the light receiving sensors of each pixel of the image sensor, and n number of secondary image data items corresponding to the optical systems are generated by performing crosstalk removal processing on the m number of generated primary image data items for each pixel. In a case where a pixel as a processing target includes the primary image data of which a pixel value is saturated, the secondary image data items are generated by removing the corresponding primary image data and performing the crosstalk removal processing.

An image sensor includes a unit pixel that includes a photoelectric converter configured to accumulate electric charges generated based on incident light, and an electric charger configured to store the electric charges transferred from the photoelectric converter, and a corrector configured to correct a signal corresponding to the electric charges output from the electric charger based on a transfer condition when the electric charges are transferred from the photoelectric converter to the electric charger.

A solid-state imaging device includes a plurality of pixels in a two-dimensional array. Each pixel includes a photoelectric conversion element that converts incident light into electric charge, and a charge holding element that receives the electric charge from the photoelectric conversion element, and transfers the electric charge to a corresponding floating diffusion. The charge holding element further includes a plurality of electrodes.

Provided is a photoelectric conversion device including: a pixel array including pixels arranged to form columns; and a readout unit including column readout circuits provided corresponding to the columns, each of the column readout circuits being configured to read out signals from the pixels in a corresponding column. Each of the column readout circuits includes a holding unit configured to hold a reference voltage supplied from a reference voltage line, an amplifier unit configured to amplify a signal output from one of the pixels based on the reference voltage held in the holding unit, and a switch unit configured to electrically disconnect the reference voltage line from the holding unit when the amplifier unit amplifies the signal. The holding unit of a first column readout circuit and the holding unit of a second column readout circuit are electrically connected to each other by a path other than the switch unit.

An image sensor pixel may include a photodiode that generates first charge for a first frame and second charge for a second frame, first and second storage gates coupled to the photodiode, a floating diffusion coupled to the first storage gate through a first transistor, a second transistor coupled to the second storage gate, and a capacitor coupled to the floating diffusion through a third transistor. The image sensor pixel may output image signals associated with the first charge generated by the photodiode for the first image frame while the photodiode concurrently generates the second charge for the second image frame. The second storage gate may be used to store overflow charge. Overflow charge for the second frame may be stored at the second storage gate while image signals associated with the first image frame are read out from capacitor and the floating diffusion.

An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount Q.sub.PD generated by the photoelectric converter during one exposure period, a saturation charge amount Q.sub.MEM_SAT of the first holding portion, and the maximum charge amount Q.sub.GS that can be held in the potential well are in a relationship of: Q.sub.PD<Q.sub.GSQ.sub.MEM_SAT.

An image processing apparatus includes: a comparing circuit configured to compare, based on image data generated by an imaging element including a light receiver in which a plurality of photoelectric converting elements forms a set of a unit pixel and in which a plurality of unit pixels are arranged in a two-dimensional matrix, and a micro lens that is provided per unit pixel and is layered on a light receiving surface of the unit pixel, output values of the respective photoelectric converting elements per unit pixel to detect an abnormal output; and an estimating circuit configured to estimate an abnormality by using output values of the respective photoelectric converting elements in the unit pixel. The comparing circuit is configured to detect the abnormal output by comparing ratios of output values that are output by the photoelectric converting elements at identical positions in adjacent unit pixels.

An image sensor, comprises: a pixel area that includes first and second pixel groups each constituted by a plurality of pixels; first and second output channels that output image signals obtained from the first and second pixel groups, respectively; and a driver that performs drive according to a first drive method in which the first pixel group is alternately exposed in a medium exposure period and a short exposure period in a first cycle so that a first and second image signals are read out, and in which the second pixel group is exposed in a long exposure period in a second cycle longer than the first cycle so that a third image signal is read out. The reading out of the third image signal and reading out of the first or the second image signal are performed in parallel.