An imaging device includes: a pixel; a signal line electrically connected to the pixel; and a first and second sample-and-hold circuits electrically connected to the signal line. The pixel includes: a photoelectric converter that generates signal charge; a charge accumulation region that accumulates the signal charge; a reset transistor that resets a voltage of the charge accumulation region; and an amplifier transistor that amplifies a signal voltage. The first sample-and-hold circuit includes: a first switch that is electrically connected to the signal line and has input-output characteristics in which an output is clipped at a clipping voltage with respect to an input exceeding the clipping voltage; and a first capacitor electrically connected to the signal line through the first switch. The second sample-and-hold circuit includes: a second switch electrically connected to the signal line; and a second capacitor electrically connected to the signal line through the second switch.

An anti-eclipse circuit for use in an imager includes a differential amplifier and a feedback circuit. The differential amplifier is coupled to an output line for receiving an output signal associated with the voltage level of a floating diffusion region in a pixel of the imager and configured to detect when a reset signal received from the pixel drops below a predetermined level. The feedback circuit is configured to increase the reset signal when the output signal is lower than the clamp voltage, thereby keeping the reset signal at the constant level.

Imagers and associated devices and systems are disclosed herein. In one embodiment, an imager includes a pixel array and control circuitry operably coupled to the pixel array. The pixel array includes an imaging pixel configured to produce a reset signal and a non-imaging pixel configured to produce a nominal reset signal. The control circuitry is configured to produce an output signal based at least in part on one of (a) the nominal reset signal when distortion at the imaging pixel exceeds a threshold and (b) the reset signal when distortion does not exceed the threshold.

A photodiode is adapted to accumulate image charges in response to incident light. The accumulate image charges are transferred to a floating diffusion, amplified, row selected and the amplified row selected signal is output to a bitline. A bitline enable transistor is coupled to link between the bitline and a bitline source node. A current source is coupled to connect between the bitline source node and a ground. The current source generator sinks adjustable current from the bitline source node to the ground through a cascode transistor and a bias transistor. A cascode hold capacitor is coupled between the cascode control voltage and the ground. A bias hold capacitor is coupled between the bias control voltage and the ground. A bias boost driver is coupled to control the cascode control voltage and the bias control voltage.

A system and method for correcting oversaturated pixels in far-infrared (FIR) images captured by a shutterless FIR camera, the method comprising: capturing thermal images by a FIR sensor in the shutterless FIR camera; processing the thermal images, by the shutterless FIR camera to determine pixel value and at least a shutterless sunburn correction, wherein the shutterless sunburn correction removes oversaturated pixels based on pixel-by-pixel analysis of the thermal image; and sending the processed thermal images to an output device.

A system and method for correcting oversaturated pixels in far-infrared (FIR) images captured by a shutterless FIR camera, the method comprising: capturing thermal images by a FIR sensor in the shutterless FIR camera; processing the thermal images, by the shutterless FIR camera to determine pixel value and at least a shutterless sunburn correction, wherein the shutterless sunburn correction removes oversaturated pixels based on pixel-by-pixel analysis of the thermal image; and sending the processed thermal images to an output device.

An overlight amount detection circuit (1) according to the present disclosure includes a MOS transistor and a high-impedance element (Ca). A source of the MOS transistor (Mn1) is connected to a vertical signal line (VSL) of an image sensor. The high-impedance element (Ca) is connected to a drain of the MOS transistor (Mn1). The overlight amount detection circuit (1) detects a potential fluctuation of the vertical signal line (VSL) based on a potential defined by a gate potential of the MOS transistor (Mn1), and outputs a potential of a contact point between the drain of the MOS transistor (Mn1) and the high-impedance element (Ca) as a signal indicating an overlight amount detection result.

[Problem] To provide an imaging device capable of increasing pixel density and changing an imaging magnification.

[Solution] An imaging device includes: a photoelectric converter; a pixel region having a plurality of combinations of transfer transistors having one set of ends connected to the photoelectric converter; a first floating diffusion connected to the other set of ends of the plurality of transfer transistors; a separation transistor having one end connected to the first floating diffusion; a second floating diffusion connected to the other end of the separation transistor; and a reset transistor having one end connected to the other end of the separation transistor and the other end supplied with a predetermined potential. The separation transistor is put into a disconnected state and the reset transistor is put into a connected state.

[Problem] To provide an imaging device capable of increasing pixel density and changing an imaging magnification.

[Solution] An imaging device includes: a photoelectric converter; a pixel region having a plurality of combinations of transfer transistors having one set of ends connected to the photoelectric converter; a first floating diffusion connected to the other set of ends of the plurality of transfer transistors; a separation transistor having one end connected to the first floating diffusion; a second floating diffusion connected to the other end of the separation transistor; and a reset transistor having one end connected to the other end of the separation transistor and the other end supplied with a predetermined potential. The separation transistor is put into a disconnected state and the reset transistor is put into a connected state.

An imaging apparatus includes: a light reception unit that receives a light emission signal from a transmission apparatus via a pixel; a detection unit that detects whether or not an output based on the light emission signal received by the light reception unit is a first threshold value or more; and a correction unit that corrects a luminance of the pixel when the output based on the light emission signal is the first threshold value or more based on a result detected by the detection unit.