A pixel array, an image sensor, and a self-checking method of the image sensor are provided. The pixel array includes a photosensitive pixel region, a first reference pixel region and/or a second reference pixel region; the photosensitive pixel region includes M rows and N columns of pixels arranged in an array; the first reference pixel region includes n columns of first reference pixels disposed corresponding to N columns of pixels of the photosensitive pixel region; the second reference pixel region includes m rows of the second reference pixels disposed corresponding to the M rows of pixels of the photosensitive pixel region. The first reference pixel region and/or the second reference pixel region can be used to implement a real-time self-checking function of the readout circuit and/or the control circuit in the image sensor, check in real time whether the image signal output by the image sensor is correct.

A semiconductor device includes a digital-analog converter provided with a plurality of current cells, and a test circuit electrically connected to the digital-analog converter to test the digital-analog converter. The test circuit includes: a charge information holding circuit that holds, as differential charge information, a difference value between a first charge according to a first current and a second charge according to a second current by at least one or more current cells among the plurality of current cells; a reference voltage generation circuit that generates a reference voltage to be comparative object; and a comparison circuit that compares a determination voltage according to the differential charge information and the reference voltage to output a comparison result.

An image sensing device includes a first test block, a second test block, and a readout block. The first test block includes a plurality of first image sensing pixels structured to convert incident light carrying an image into a first pixel signal indicative of the image, and a first heating element structured to transmit heat to the first image sensing pixels. The second test block includes a plurality of second image sensing pixels that each include a light blocking structure to be shielded from receiving incident light to generate a second pixel signal without being directly exposed to the incident light, and a second heating element structured to transmit heat to the second image sensing pixels. The readout block processes the first pixel signal output from the first test block and the second pixel signal output from the second test block.

Provided is a semiconductor device including: first signal generation units arranged so as to form rows and columns and corresponding to pixels configured to output a signal in response to incidence of light, each of the first signal generation units being configured to output a first digital signal in response to an output from a corresponding pixel; second signal generation units arranged corresponding to at least a part of the rows and the columns, each of the second signal generation units being configured to output a second digital signal having a predetermined digital value; and a readout unit configured to output a signal based on at least one of the first digital signal and the second digital signal that is output from a selected part of the first signal generation units and the second signal generation units.

Noise is reduced in a solid-state image capturing element provided with an ADC for each column. An analog-to-digital converter increases or decreases an analog signal using an analog gain selected from among a plurality of analog gains, and converts the increased or decreased analog signal to a digital signal. An input switching section inputs, as the analog signal, one of a test signal having a predetermined level and a pixel signal to the analog-to-digital converter. In a case where a test signal is inputted, a correction value calculation section obtains, from the analog signal and the digital signal, a correction value for correcting an error in the selected analog gain, and outputs the correction value. A correction section, when inputted with the pixel signal after the correction value is outputted, corrects the digital signal using the correction value.

The present invention relates to a fault detection circuit for detecting one or more column faults in a pixel array of an image sensor. The present invention further relates to a readout circuit for reading out a column line of an image sensor, and to an image sensor comprising the same.

The fault detection circuit according to the invention comprises a signal unit for applying an electrical signal to a given column line of the pixel array, a determining unit for measuring a response to the applied electrical signal and for determining whether a fault exists for said given column line in dependence of the measured response, and a controller for controlling the signal unit and the determining unit, and for outputting a fault status for said given column line.

The present invention relates to a fault detection circuit for detecting one or more column faults in a pixel array of an image sensor. The present invention further relates to a readout circuit for reading out a column line of an image sensor, and to an image sensor comprising the same. The fault detection circuit according to the invention comprises a signal unit for applying an electrical signal to a given column line of the pixel array, a determining unit for measuring a response to the applied electrical signal and for determining whether a fault exists for said given column line in dependence of the measured response, and a controller for controlling the signal unit and the determining unit, and for outputting a fault status for said given column line.

Effective pixels and a failure detection pixel are connected to a control signal line for controlling an operation of the pixels and to an output signal line for outputting a result of failure detection in the pixels. Among the effective pixels, the effective pixels in a same row are connected in common to a same control signal line, and the effective pixels in a same column are connected in common to a same output signal line. The failure detection pixel is connected in common to at least one of the control signal line or the output signal line and configured to detect a failure in any of the effective pixels connected to the at least one of the control signal line or the output signal line.

Effective pixels and a failure detection pixel are connected to a control signal line for controlling an operation of the pixels and to an output signal line for outputting a result of failure detection in the pixels. Among the effective pixels, the effective pixels in a same row are connected in common to a same control signal line, and the effective pixels in a same column are connected in common to a same output signal line. The failure detection pixel is connected in common to at least one of the control signal line or the output signal line and configured to detect a failure in any of the effective pixels connected to the at least one of the control signal line or the output signal line.

Presence or absence of an abnormality is easily determined in a solid-state imaging element that detects an address event. The solid-state imaging element includes a photoelectric conversion element, a test signal supply unit, a selection unit, and a comparator. The photoelectric conversion element converts incident light into an electric signal by photoelectric conversion. The test signal supply unit supplies, as a test signal, a signal that fluctuates with time. The selection unit selects either the electric signal or the test signal. The comparator compares a predetermined threshold value with the signal selected by the selection unit, and outputs a result of the comparison.