Patent classifications
H04N25/7013
SOLID-STATE IMAGE CAPTURING DEVICE AND ELECTRONIC APPARATUS
A solid-state image capturing device includes: a pixel region including a light receiving element, a transfer gate, a floating diffusion region, and a buffer transistor; and an interconnect that is arranged in an N-th interconnect layer (N is an integer of two or more), and electrically connects the floating diffusion region and the buffer transistor.
Image reading apparatus and semiconductor device
An image reading apparatus for reading an image includes a light receiving element that receives light from the image so as to perform photoelectric conversion, an amplifier which is electrically connected to the light receiving element, and amplifies a signal generated by photoelectric conversion, a switch element which is electrically connected to both ends of the amplifier so as to be parallel to the amplifier, a first capacitance which are electrically connected to both ends of the amplifier so as to be parallel to the amplifier, and a second capacitance which has one end which is electrically connected to one end of the light receiving element and one end of the amplifier. A second signal of which potential is changed after potential of a first signal input to a control terminal of the switch element is changed is applied to another end of the second capacitance.
METHODS AND APPARATUS FOR A LIGHT SENSOR
Various embodiments of the present technology may comprise methods and apparatus for a light sensor with a precharge circuit, such as for charging an internal node of a sensor to a starting voltage equal to an ending voltage of a different sensor. The methods and apparatus may comprise sequentially reading out the voltages of photosensitive elements and selectively activating the precharge circuit of one sensor during readout of the last photosensitive element of a different sensor.
Method for manufacturing a solid state image sensor with pixels having photodiodes patterned through overlapping divided exposure
In a solid state image sensor which has two photodiodes juxtaposed in a predetermined direction in each pixel and is formed by carrying out divided exposure, that is, exposure treatment of an entire chip by a plurality of times of exposure, image quality is improved and autofocusing speed is increased. Provided is a solid state image sensor having a first exposure region having a first region and a second exposure region having a second region. They overlap with each other in a third region between the first and second regions. In a pixel formed in the third region, a photodiode formed through a mask for first exposure region is placed at a position closer to the side of the second region than another photodiode formed through a mask for second exposure region is.
Image reading apparatus and semiconductor device
An image reading apparatus includes an image reading chip for reading an image. The image reading chip includes a plurality of pixel units which include a light receiving element which receives light from the image so as to perform photoelectric conversion, an analog circuit, a logic circuit, and a power source pad to which a power source voltage is supplied. The image reading chip has a shape which includes a first side and a second side shorter than the first side. A distance between the analog circuit and a median point of the first side is shorter than a distance between the logic circuit and the median point of the first side, and a distance between the analog circuit and the power source pad is shorter than a distance between the logic circuit and the power source pad.
Method for Manufacturing a Solid State Image Sensor with Pixels having Photodiodes Patterned through Overlapping Divided Exposure
In a solid state image sensor which has two photodiodes juxtaposed in a predetermined direction in each pixel and is formed by carrying out divided exposure, that is, exposure treatment of an entire chip by a plurality of times of exposure, image quality is improved and autofocusing speed is increased. Provided is a solid state image sensor having a first exposure region having a first region and a second exposure region having a second region. They overlap with each other in a third region between the first and second regions. In a pixel formed in the third region, a photodiode formed through a mask for first exposure region is placed at a position closer to the side of the second region than another photodiode formed through a mask for second exposure region is.
Image reading apparatus and semiconductor device
An image reading apparatus includes an image reading chip configured to read an image. The image reading chip includes a first pixel unit which generates a first pixel signal, a second pixel unit which generates a second pixel signal, a first amplification unit which amplifies the first pixel signal, and outputs a first amplification signal, a second amplification unit which amplifies the second pixel signal, and outputs a second amplification signal, and a third amplification unit that amplifies each of the first amplification signal and the second amplification signal, and outputs an amplified signal. The image reading chip has a shape which includes a first side and a second side shorter than the first side. The third amplification unit is disposed between the first amplification unit and the second amplification unit in a direction along the first side.
IMAGE READING APPARATUS AND SEMICONDUCTOR DEVICE
An image reading apparatus for reading an image includes a light receiving element that receives light from the image so as to perform photoelectric conversion, an amplifier which is electrically connected to the light receiving element, and amplifies a signal generated by photoelectric conversion, a switch element which is electrically connected to both ends of the amplifier so as to be parallel to the amplifier, a first capacitance which are electrically connected to both ends of the amplifier so as to be parallel to the amplifier, and a second capacitance which has one end which is electrically connected to one end of the light receiving element and one end of the amplifier. A second signal of which potential is changed after potential of a first signal input to a control terminal of the switch element is changed is applied to another end of the second capacitance.
PHOTOELECTRIC CONVERSION DEVICE, IMAGE READING DEVICE, AND IMAGE FORMING APPARATUS
A photoelectric conversion device includes a current consumption circuit configured to consume current such that a difference between a current consumption during a blanking period and a current consumption during a standby period is reduced.
MULTIBAND SCANNING AND FIBER BUNDLE TO ENABLE REDUCED LIGHT SOURCE INTENSITY AND IMPROVED IMAGING QUALITY
Some implementations of the disclosure describe an imaging system comprising: a camera including multiple image sensors that are spaced apart, each of the image sensors to capture an image of a respective sample location of multiple sample locations of a sample; and a fiber bundle comprising multiple fiber cores, each of the fiber cores to emit a light beam that is projected on a respective one of the sample locations.