The present disclosure relates to a solid-state imaging device, a manufacturing method thereof, and an electronic apparatus, in which both oblique light characteristics and sensitivity can be improved. The solid-state imaging device includes pixel array unit in which a plurality of pixels is two-dimensionally arranged in a matrix and multi-stage light shielding walls are provided between the pixels. The present disclosure is applicable to, for example, a back-illuminated type solid-state imaging device and the like.

There is provided a solid-state imaging device that includes a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

A step of forming an on-chip lens of a phase difference pixel is simplified. An imaging element includes a pixel array unit, an individual on-chip lens, a common on-chip lens, and an adjacent on-chip lens. In the pixel array unit, pixels that performs photoelectric conversion according to incident light components, a plurality of phase difference pixels that is included in the pixels, is arranged adjacent to each other, and detects a phase difference, and phase difference pixel adjacent pixels that are included in the pixels and are adjacent to the phase difference pixels are arranged two-dimensionally. The individual on-chip lens is arranged for each of the pixels and individually condenses the incident light components on corresponding one of the pixels. The common on-chip lens is commonly arranged in the plurality of phase difference pixels and commonly condenses the incident light component. The adjacent on-chip lens is arranged for each of the phase difference pixel adjacent pixels, individually condenses the incident light components on corresponding one of the phase difference pixel adjacent pixels, and is formed to have a size different from the individual on-chip lens to adjust a shape of the common on-chip lens.

An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.

An image capturing device includes: an image capturing element having a first image capturing region that captures an image of a photographic subject and outputs a first signal, and a second image capturing region that captures an image of the photographic subject and outputs a second signal; a setting unit that sets an image capture condition for the first image capturing region to an image capture condition that is different from an image capture condition for the second image capturing region; a correction unit that performs correction upon the second signal, for employment in interpolation of the first signal; and a generation unit that generates an image of the photographic subject that has been captured by the first image capturing region by employing a signal generated by interpolating the first signal according to the second signal as corrected by the correction unit.

An image capturing device includes: an image capturing element having a first image capturing region that captures an image of a photographic subject and outputs a first signal, and a second image capturing region that captures an image of the photographic subject and outputs a second signal; a setting unit that sets an image capture condition for the first image capturing region to an image capture condition that is different from an image capture condition for the second image capturing region; a correction unit that performs correction upon the second signal, for employment in interpolation of the first signal; and a generation unit that generates an image of the photographic subject that has been captured by the first image capturing region by employing a signal generated by interpolating the first signal according to the second signal as corrected by the correction unit.

An imaging element of an imaging unit 24 divides the exit pupil of an imaging optical system 21 into a plurality of regions and generates a pixel signal for each region. An optical axis position adjustment unit 23 adjusts the optical axis position of the imaging optical system with respect to the imaging element. A control unit 26 calculates a parallax on the basis of the pixel signal for each region after the pupil division and performs focus control of the imaging optical system 21. The control unit 26 also moves the optical axis position using the optical axis position adjustment unit 23, and generates, using the imaging element, pixel signals indicating the same subject region in the plurality of regions after the pupil division. An image processing unit 25 performs binning of a plurality of pixel signals indicating the same subject region generated by moving the optical axis position to generate a high-resolution captured image. Calculation of the parallax and acquisition of a high-resolution captured image can be performed.

An imaging element of an imaging unit 24 divides the exit pupil of an imaging optical system 21 into a plurality of regions and generates a pixel signal for each region. An optical axis position adjustment unit 23 adjusts the optical axis position of the imaging optical system with respect to the imaging element. A control unit 26 calculates a parallax on the basis of the pixel signal for each region after the pupil division and performs focus control of the imaging optical system 21. The control unit 26 also moves the optical axis position using the optical axis position adjustment unit 23, and generates, using the imaging element, pixel signals indicating the same subject region in the plurality of regions after the pupil division. An image processing unit 25 performs binning of a plurality of pixel signals indicating the same subject region generated by moving the optical axis position to generate a high-resolution captured image. Calculation of the parallax and acquisition of a high-resolution captured image can be performed.

An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.