A characteristic of a flicker component is detected to perform object detection at a higher speed and with higher accuracy. An object detection device according to an embodiment is provided with a solid-state imaging device (200) provided with a plurality of pixels arranged in a matrix, the solid-state imaging device that detects, according to a light amount incident on each of the pixels, occurrence of an event in the pixel, a flicker detection unit (12) that generates flicker information on the basis of the occurrence of the event detected by the solid-state imaging device, and an object detection unit (15) that detects an object on the basis of the flicker information detected by the solid-state imaging device.

For processing a signal from an event-based sensor having an array of sensing elements facing a scene, the method comprises: receiving the signal including, for each sensing element, successive events originating from said sensing element depending on variations of incident light from the scene; analyzing the signal to detect a frequency pattern in a light profile sensed by at least one sensing element; and extracting information from the scene in response to detection of the frequency pattern.

For processing a signal from an event-based sensor having an array of sensing elements facing a scene, the method comprises: receiving the signal including, for each sensing element, successive events originating from said sensing element depending on variations of incident light from the scene; analyzing the signal to detect a frequency pattern in a light profile sensed by at least one sensing element; and extracting information from the scene in response to detection of the frequency pattern.

The present technology relates to an event signal detection sensor and a control method for shortening latency and reducing overlooking objects. A plurality of pixel circuits detects an event that is a change in an electrical signal of a pixel that generates the electrical signal by performing photoelectric conversion, and outputs event data indicating the occurrence of the event. A detection probability setting unit calculates a detection probability per unit time for detecting the event for each region formed with one or more pixel circuits, in accordance with a result of pattern recognition. The detection probability setting unit controls the pixel circuits in such a manner that event data is output in accordance with the detection probability. The present technology can be applied to an event signal detection sensor that detects an event that is a change in an electrical signal of a pixel.

In order to achieve a photoelectric conversion device that enables suppressing the lowering in tone, a photoelectric conversion device has a pixel including a photoelectric conversion element that outputs a signal according to an incident photon; a photon counter that outputs a measured value according to the number of photons incident to the pixel, a time counter that measures a time until the measured value of the photon counter reaches a first threshold after the photon counter starts the measurement, and a sensitivity adjustment unit configured to perform a sensitivity change for the pixel during a time until the measured value of the photon counter reaches the first threshold after the photon counter starts the measurement.

For processing a signal from an event-based sensor having an array of sensing elements facing a scene, the method comprises: receiving the signal including, for each sensing element, successive events originating from said sensing element depending on variations of incident light from the scene; analyzing the signal to detect a frequency pattern in a light profile sensed by at least one sensing element; and extracting information from the scene in response to detection of the frequency pattern.

An object is to reduce a circuit scale in a solid-state imaging element that detects an address event.

The solid-state imaging element is provided with a plurality of photoelectric conversion elements, a signal supply unit, and a detection unit. In this solid-state imaging element, each of the plurality of photoelectric conversion elements photoelectrically converts incident light to generate a first electric signal. Furthermore, in the solid-state imaging element, the detection unit detects whether or not a change amount of the first electric signal of each of the plurality of photoelectric conversion elements exceeds a predetermined threshold and outputs a detection signal indicating a result of the detection result.

An object is to reduce a circuit scale in a solid-state imaging element that detects an address event.

The solid-state imaging element is provided with a plurality of photoelectric conversion elements, a signal supply unit, and a detection unit. In this solid-state imaging element, each of the plurality of photoelectric conversion elements photoelectrically converts incident light to generate a first electric signal. Furthermore, in the solid-state imaging element, the detection unit detects whether or not a change amount of the first electric signal of each of the plurality of photoelectric conversion elements exceeds a predetermined threshold and outputs a detection signal indicating a result of the detection result.

An object is to reduce a circuit scale in a solid-state imaging element that detects an address event.

The solid-state imaging element is provided with a plurality of photoelectric conversion elements, a signal supply unit, and a detection unit. In this solid-state imaging element, each of the plurality of photoelectric conversion elements photoelectrically converts incident light to generate a first electric signal. Furthermore, in the solid-state imaging element, the detection unit detects whether or not a change amount of the first electric signal of each of the plurality of photoelectric conversion elements exceeds a predetermined threshold and outputs a detection signal indicating a result of the detection result.

In a solid-state image sensor that detects an address event, the detection sensitivity for the address event is controlled to an appropriate value.

The solid-state image sensor includes a pixel array unit and a control unit. In the solid-state image sensor, multiple pixel circuits are arranged in the pixel array unit, each detecting a change in luminance of incident light occurring outside a predetermined dead band as the address event. The control unit controls the width of the dead band according to the number of times the address event is detected in the pixel array unit within a fixed unit cycle.