The invention relates to a TDI line detector (1), comprising n TDI lines (Z1-Zn), wherein each TDI line (Z) has m pixels (P), and at least one read-out electronics (11-14), wherein the TDI line detector (1) is subdivided into x submodules (S1-S4), wherein the number of lines (Z) of a submodule (S1-S4) is n/x, wherein a discrete read-out electronics (11-14) is associated with the last line of each submodule (S1-S4), wherein the length (L1) of the read-out electronics (11-14) corresponds to an integer multiple of the length (L2) of a pixel (P), wherein x≥2 is, wherein the associated pixels (P) of different submodules (S1-S4) are arranged pixel to pixel relative to one another or the submodules (S1-S4) or groups of submodules (S1-S4) are laterally interlinked alternately by half a pixel (P).

A device for imaging comprising an image sensor is disclosed. The image sensor includes rows and columns of pixels. The image sensor further includes a first control structure for controlling transfer of accumulated electric charges from photo-active regions to transmission regions in pixels. The image sensor further includes a second control structure for controlling transfer of accumulated charge in the transmission region of each row to the adjacent row below. The first and second control structures control the image sensor to alternately transfer accumulated charges in photo-active regions to the transmission regions and transfer charges to the adjacent row below. The control structure includes a plurality of row structures which are arranged to select whether the charge in the photo-active regions of respective rows are added to the transmission region. Each row of pixels is controlled by one of the row structures of the first control structure.

In time-delay-and-integrate (TDI) imaging, a charge-couple device (CCD) integrates and transfers charge across its columns. Unfortunately, the limited well depth of the CCD limits the dynamic range of the resulting image. Fortunately, TDI imaging can be implemented with a digital focal plane array (DFPA) that includes a detector, analog-to-digital converter (ADC), and counter in each pixel and transfer circuitry connected adjacent pixels. During each integration period in the TDI scan, each detector in the DFPA generates a photocurrent that the corresponding ADC turns into digital pulses, which the corresponding counter counts. Between integration periods, the DFPA transfers the counts from one column to the next, just like in a TDI CCD. The DFPA also non-destructively transfers some or all of the counts to a separate memory. A processor uses these counts to estimate photon flux and correct any rollovers caused by “saturation” of the counters.

Techniques, systems, architectures, and methods for amplifying the time difference between events detected on a focal plane array, allowing greater resolution than that afforded by a reference clock are herein disclosed.

A data transmission circuit of an image sensor. In one embodiment, the data transmission circuit includes a plurality of banks coupled in a series. A peripheral bank of the plurality of transmission banks is coupled to a function logic. Each bank includes a plurality of local buffers coupled to a local buffer control and a plurality of global buffers coupled to a global buffer control. The local buffers are settable to their enabled or disabled state by a bank enable command at the local buffer control. The enabled local buffers are configured to transfer local data to shift registers of their respective bank. The disabled local buffers are configured not to transfer the local data to the shift register of their respective bank.

A TDI sensor which is capable of controlling the exposure according to the present disclosure includes a pixel unit which includes a plurality of line sensors; a light blocking unit which blocks light from being incident into some of the plurality of line sensors; a scan controller which generates an exposure control signal based on an external line trigger signal, generates an internal line trigger signal based on the external line trigger signal and the exposure control signal, and controls the movement of charges of the plurality of line sensors based on the internal line trigger signal.

The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity.

The solid-state imaging device includes a semiconductor layer in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer, and a longitudinal transistor Tr1 in which a gate electrode is formed to be embedded in the semiconductor layer from a surface of the semiconductor layer. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion of the gate electrode of the longitudinal transistor Tr1 embedded in the semiconductor substrate and is connected to a channel formed by the longitudinal transistor Tr1.

Disclosed is a time delayed integration (TDI) image sensor capable of exposure control, including a pixel area including a plurality of line sensors, a light mask configured to block the incidence of light on part of the line sensors, and a scan controller configured to generate a line control signal and an exposure control signal based on the line trigger signal and to control movement of charges in the plurality of line sensors based on the generated line control signal and exposure control signal.

A data transmission circuit of an image sensor. In one embodiment, the data transmission circuit includes a plurality of banks coupled in a series. A peripheral bank of the plurality of transmission banks is coupled to a function logic. Each bank includes a plurality of local buffers coupled to a local buffer control and a plurality of global buffers coupled to a global buffer control. The local buffers are settable to their enabled or disabled state by a bank enable command at the local buffer control. The enabled local buffers are configured to transfer local data to shift registers of their respective bank. The disabled local buffers are configured not to transfer the local data to the shift register of their respective bank.

The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity.