An imaging device may have an array of image sensor pixels arranged in rows and columns and column readout circuitry coupled to the array. The rows of pixels may receive drive signals from row driver circuitry, and the drive signals may be sent from timing circuitry based on the locations of rows within the array. In particular, rows closer to the readout circuitry may require less settling time and therefore be driven faster than the rows further from the readout circuitry. All of the rows may be driven in a single direction, or the array of pixels may have a cut, in which case rows above the cut may be driven up and rows below the cut may be driven down. A frame buffer may be used to store the signals generated by the rows of pixels and may account for the asynchronous read out of image data.

An imaging device may have an array of image sensor pixels arranged in rows and columns and column readout circuitry coupled to the array. The rows of pixels may receive drive signals from row driver circuitry, and the drive signals may be sent from timing circuitry based on the locations of rows within the array. In particular, rows closer to the readout circuitry may require less settling time and therefore be driven faster than the rows further from the readout circuitry. All of the rows may be driven in a single direction, or the array of pixels may have a cut, in which case rows above the cut may be driven up and rows below the cut may be driven down. A frame buffer may be used to store the signals generated by the rows of pixels and may account for the asynchronous read out of image data.

A ramp generator providing ramp signal with high resolution fine gain includes a current mirror having a first and second paths to conduct a capacitor current and an integrator current responsive to the capacitor current. First and second switched capacitor circuits are coupled to the first path. A fractional divider circuit is coupled to receive a clock signal to generate in response to an adjustable fractional divider ratio K a switched capacitor control signal that oscillates between first and second states to control the first and second switched capacitor circuits. The first and second switched capacitor circuits are coupled to be alternatingly charged by the capacitor current and discharged in response to each the switched capacitor control signal. An integrator coupled is to the second path to generate the ramp signal in response to the integrator current.

A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.

Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed.

A solid state imaging device includes: a pixel array unit that has a plurality of pixels 2-dimensionally arranged in a matrix and a plurality of signal lines arranged along a column direction; A/D conversion units that are provided corresponding to the respective signal lines and convert an analog signal output from a pixel through the signal line into a digital signal; and a switching unit that switches or converts the analog signal output through each signal line into a digital signal using any of an A/D conversion unit provided corresponding to the signal line through which the analog signal is transmitted, and an A/D conversion unit provided corresponding to a signal line other than the signal line through which the analog signal is transmitted.

There is provided a solid-state imaging device including: one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate; a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate, in which the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.

In a first sensitivity level, an AD converter performs AD conversion selectively using, in accordance with the level of the analog signal, any one of a first reference signal and a second reference signal that have mutually different slopes, and in a second sensitivity level that is different from the first sensitivity level, the AD converter performs AD conversion only using a third reference signal.

The present disclosure discloses an image sensor, an imaging device, a mobile terminal and an imaging method. The image sensor comprises a photosensitive pixel array and a filer arranged on the photosensitive pixel array. The filter comprises a filer unit array comprised a plurality of filter units, wherein each filter unit covers N photosensitive pixels, and some of the filter units comprise white filter areas. The white filter areas cover at least one of the N photosensitive pixels of the N photosensitive pixels, wherein a merged pixel is formed by the N photosensitive pixels covered by the same filter unit, wherein N is a positive integer.