Provided are a pixel array and an image sensor including the same. The pixel array includes a plurality of sub-pixels adjacent to each other and a readout circuit connected to the plurality of sub-pixels through a floating diffusion node. Each of the sub-pixels includes a photoelectric conversion element, an overflow transistor connected to the photoelectric conversion element, a phototransistor connected to the photoelectric conversion element and the overflow transistor, and a storage element connected to the phototransistor.

An image sensor includes a pixel defining pattern in a mesh form. A first division pattern divides a pixel area into two halves. A second division pattern divides the pixel area into two halves. A first diagonal division pattern divides the pixel area into two halves. A second diagonal division pattern divides the pixel area into two halves. First through eighth photodiodes are arranged in the pixel area.

An image sensor includes a pixel defining pattern in a mesh form. A first division pattern divides a pixel area into two halves. A second division pattern divides the pixel area into two halves. A first diagonal division pattern divides the pixel area into two halves. A second diagonal division pattern divides the pixel area into two halves. First through eighth photodiodes are arranged in the pixel area.

An imaging device includes an imaging unit that generates image data on the basis of a first power voltage, an image processing unit that performs image processing on the image data on the basis of a second power voltage, a reference voltage generating unit that generates a first reference voltage on the basis of the first power voltage and a first flag generating unit that generates a first flag signal for the second power voltage on the basis of a comparison of the second power voltage and the first reference voltage and configured to output the first flag signal.

An imaging device includes an imaging unit that generates image data on the basis of a first power voltage, an image processing unit that performs image processing on the image data on the basis of a second power voltage, a reference voltage generating unit that generates a first reference voltage on the basis of the first power voltage and a first flag generating unit that generates a first flag signal for the second power voltage on the basis of a comparison of the second power voltage and the first reference voltage and configured to output the first flag signal.

A dynamic vision sensor (DVS) or change detection sensor reacts to changes in light intensity and in this way monitors how a scene changes. This disclosure covers both single pixel and array architectures. The DVS may contain one pixel or 2-dimensional or 1-dimensional array of pixels. The change of intensities registered by pixels are compared, and pixel addresses where the change is positive or negative are recorded and processed. Analyzing frames based on just three values for pixels, increase, decrease or unchanged, the proposed DVS can process visual information much faster than traditional computer vision systems, which correlate multi-bit color or gray level pixel values between successive frames.

A dynamic vision sensor (DVS) or change detection sensor reacts to changes in light intensity and in this way monitors how a scene changes. This disclosure covers both single pixel and array architectures. The DVS may contain one pixel or 2-dimensional or 1-dimensional array of pixels. The change of intensities registered by pixels are compared, and pixel addresses where the change is positive or negative are recorded and processed. Analyzing frames based on just three values for pixels, increase, decrease or unchanged, the proposed DVS can process visual information much faster than traditional computer vision systems, which correlate multi-bit color or gray level pixel values between successive frames.

An image sensor includes: a pixel that generates a pixel signal based upon incident light having entered therein; and a generation unit that includes a first input unit to which the pixel signal is input, a second input unit to which a first reference signal with a shifting voltage is input, and an output unit that outputs an output signal generated based upon the pixel signal and the first reference signal, wherein: the generation unit further includes a first capacitance disposed between the first input unit and the output unit, a second capacitance disposed between the second input unit and the output unit, and a third capacitance connected to either one of the first capacitance and the second capacitance.

An image sensor includes: a pixel that generates a pixel signal based upon incident light having entered therein; and a generation unit that includes a first input unit to which the pixel signal is input, a second input unit to which a first reference signal with a shifting voltage is input, and an output unit that outputs an output signal generated based upon the pixel signal and the first reference signal, wherein: the generation unit further includes a first capacitance disposed between the first input unit and the output unit, a second capacitance disposed between the second input unit and the output unit, and a third capacitance connected to either one of the first capacitance and the second capacitance.

In one example, an imaging device including a plurality of pixel circuits, a first control line, a second control line, a first voltage supply line, a second voltage supply line, a first light-receiving element, and a diagnosis unit is disclosed. The pixel circuits each include a first terminal, a second terminal, a third terminal, an accumulation unit, a first transistor, a second transistor, and an output unit. The first transistor is couples the third terminal to the accumulation unit on the basis of a voltage of the first terminal. The second transistor supplies a predetermined voltage to the accumulation unit on the basis of a voltage of the second terminal. The output unit outputs a signal corresponding to a voltage in the accumulation unit.