An object is to improve a frame rate in a solid-state imaging element that employs a global shutter method. In the solid-state imaging element, a photoelectric conversion element generates a charge by photoelectric conversion. A charge holding transistor holds the charge. A backward flow prevention transistor generates a potential barrier between the photoelectric conversion element and the charge holding transistor immediately after the charge is transferred from the photoelectric conversion element to the charge holding transistor. A floating diffusion layer accumulates the charge and generates a voltage corresponding to an amount of the charge. A transfer transistor transfers the charge from the charge holding transistor to the floating diffusion layer.

Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed.

A photon counting device includes a plurality of pixels each including a photoelectric conversion element configured to convert input light to charge, and an amplifier configured to amplify the charge converted by the photoelectric conversion element and convert the charge to a voltage, an A/D converter configured to convert the voltages output from the amplifiers of the plurality of pixels to digital values; and a conversion unit configured to convert the digital value output from the A/D converter to the number of photons by referring to reference data, for each of the plurality of pixels, and the reference data is created based on a gain and an offset value for each of the plurality of pixels.

The image sensing device includes a pixel array including a plurality of unit pixels arranged in columns and rows. Each unit pixel includes a photoelectric conversion element, circulation gates, transfer gates, and drain nodes. The photoelectric conversion element generates photocharges by performing photoelectric conversion of incident light. The circulation gates are located at sides of the photoelectric conversion element, receive circulation control signals and move the photocharges within the photoelectric conversion element in a predetermined direction based on the circulation control signals. The transfer gates are respectively located between two adjacent circulation gates, receive a transfer control signal and transmit the photocharges to a floating diffusion region based on the transfer control signal. The drain nodes are located at sides of the circulation gates that are opposite to the photoelectric conversion element, and receive a drain voltage. The drain nodes include a first drain node that is shared by two adjacent unit pixels arranged in the first direction and a second drain node that is shared by the two adjacent unit pixels arranged in the second direction.

A data transmission circuit of an image sensor. In one embodiment, the data transmission circuit includes a plurality of banks coupled in a series. A peripheral bank of the plurality of transmission banks is coupled to a function logic. Each bank includes a plurality of local buffers coupled to a local buffer control and a plurality of global buffers coupled to a global buffer control. The local buffers are settable to their enabled or disabled state by a bank enable command at the local buffer control. The enabled local buffers are configured to transfer local data to shift registers of their respective bank. The disabled local buffers are configured not to transfer the local data to the shift register of their respective bank.

An imaging device includes pixels, output lines on each column, an AD conversion unit including column AD conversion circuits connected to the output lines, a first storage unit including holding units connected to the column AD conversion circuits, a transfer unit that transfers signals in the first storage unit, a second storage unit that holds signals from the transfer unit, and an output unit that outputs signals in the second storage unit. The pixels output a first analog signal based on signal from the first photoelectric converter and a second analog signal based on signal from the first and second photoelectric converter. The AD conversion unit converts the first and second analog signals into first and second digital signals. The number of signals corresponding to the first digital signals of signals output by the output unit is less than the number of signals output in parallel from the output lines.

In a solid-state image sensor that compares an amount of change in light amount and a threshold, time required to adjust the threshold is shortened. The solid-state image sensor includes a voltage comparison unit and a count unit. In the solid-state image sensor, the voltage comparison unit compares an analog signal according to an amount of change in incident light with a predetermined voltage indicating a boundary of a predetermined voltage range, and outputs a comparison result as a voltage comparison result. Furthermore, in the solid-state image sensor, the count unit counts a count value every time the voltage comparison result indicating that the analog signal falls outside the voltage range is output.

A method is described that includes, on an image processor having a two dimensional execution lane array and a two dimensional shift register array, repeatedly shifting first content of multiple rows or columns of the two dimensional shift register array and repeatedly executing at least one instruction between shifts that operates on the shifted first content and/or second content that is resident in respective locations of the two dimensional shift register array that the shifted first content has been shifted into.

An imaging apparatus including a ramp voltage generation circuit having a first period for outputting an offset voltage that sets a reference voltage for the comparator circuit, and a second period for outputting a reference voltage having a slope-shaped voltage waveform that varies with time, wherein the generation circuit has a first drive state in which a voltage change amount per unit time of the reference voltage in the second period is a first voltage amount, and a second drive state in which the voltage change amount per unit time of the reference voltage in the second period is a second voltage amount that is less than the first voltage amount, and wherein the offset voltage in the second drive state is less than a value obtained by multiplying the offset voltage in the first drive state by a ratio of the second voltage amount to the first voltage amount.

Various aspects of the present disclosure generally relate to a sensor module. In some aspects, an image sensor module may include an array of photon sensors configured to output a first set of signals corresponding to a set of photon sensors of the array of photon sensors. The set of photon sensors may include a row of photon sensors, or a column of photon sensors, of the array of photon sensors. The image sensor module may include a plurality of data selector components configured to receive the first set of signals and output a second set of signals corresponding to a subset of the set of photon sensors.