There is provided a solid-state image pickup element including: a photodiode configured to convert incident light into a photocurrent; an amplification transistor configured to amplify a voltage between a gate having a potential depending on the photocurrent and a source having a predetermined reference potential and output the amplified voltage from a drain; and a potential supply section configured to supply an anode of the photodiode and a back-gate of the amplification transistor with a predetermined potential lower than the reference potential.

An imaging apparatus and electronic equipment configured for reduced power consumption are disclosed. In one example, an imaging apparatus includes a pixel array unit including a first pixel portion and a second pixel portion different from the first pixel portion. Each of the first pixel portion and the second pixel portion includes a first photoelectric conversion unit and a second photoelectric conversion unit adjacent to the first photoelectric conversion unit. The pixel array unit includes a first drive line connected to the first photoelectric conversion unit of the first pixel portion and the second pixel portion, a second drive line connected to the second photoelectric conversion unit of the first pixel portion, and a third drive line connected to the second photoelectric conversion unit of the second pixel portion. The t technology can, for example, be applied in a CMOS image sensor having pixels for phase difference detection.

The device comprises an array (8) of cells (10), with each cell having a single-photon avalanche diode (12) and a quenching circuit (14). Each cell (10) further comprises a first analog output (A) as well as a digital output (D). A latch (20) is provided for buffering a pulse generated by the diode (12) and selectively feeding it to the digital output (D). The cells (10) are arranged in rows and columns, and the outputs (A, D) are fed to analog and digital bus lines (40, 42) for off-array analog and digital signal processing. A data switch (54) and a shift register (58) are provided for serializing various measurement results detected by the device.

The device comprises an array (8) of cells (10), with each cell having a single-photon avalanche diode (12) and a quenching circuit (14). Each cell (10) further comprises a first analog output (A) as well as a digital output (D). A latch (20) is provided for buffering a pulse generated by the diode (12) and selectively feeding it to the digital output (D). The cells (10) are arranged in rows and columns, and the outputs (A, D) are fed to analog and digital bus lines (40, 42) for off-array analog and digital signal processing. A data switch (54) and a shift register (58) are provided for serializing various measurement results detected by the device.

A solid-state imaging element that includes a semiconductor layer, a floating diffusion region (FD), a penetrating pixel separation region, and a non-penetrating pixel separation region. In the semiconductor layer, a visible-light pixel (PDc) that receives visible light and an infrared-light pixel (PDw) that receives infrared light are two-dimensionally arranged. The floating diffusion region is provided in the semiconductor layer and is shared by adjacent visible-light and infrared-light pixels. The penetrating pixel separation region is provided in a region excluding a region corresponding to the floating diffusion region in an inter-pixel region of the visible-light pixel and the infrared-light pixel, and penetrates the semiconductor layer in a depth direction. The non-penetrating pixel separation region is provided in the region corresponding to the floating diffusion region in the inter-pixel region, and reaches a midway part in the depth direction from the light receiving surface of the semiconductor layer.

An imaging device of the present disclosure includes a plurality of pixel circuits and a controller. The plurality of pixel circuits each includes: a light-receiving circuit that generates a pixel signal corresponding to an amount of received light; a comparator that generates a first comparison signal by comparing the pixel signal with a reference signal having a ramp waveform; a delay circuit that generates a second comparison signal by delaying the first comparison signal; a selection circuit that selects one of the first comparison signal and the second comparison signal and outputs a selected signal as a third comparison signal; and a latch that latches a time code at a timing based on the third comparison signal. The controller controls an operation of the selection circuit in each of the plurality of pixel circuits.

A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.

A reflective module assembly is provided. The reflective module assembly includes a fixed body, a moving body configured to rotate with respect to the fixed body, a reflective member disposed in the moving body, the reflective member configured to change a direction of a path of light incident in a first optical axis direction to a second optical axis direction, three ball members spaced apart from a rotational axis of the moving body, the three ball members configured to rotatably support the moving body, and a groove arrangement disposed on at least one of the moving body and the fixed body, and configured to contact with the three ball members. The three ball members and the groove arrangement form six contact points.

A reflective module assembly is provided. The reflective module assembly includes a fixed body, a moving body configured to rotate with respect to the fixed body, a reflective member disposed in the moving body, the reflective member configured to change a direction of a path of light incident in a first optical axis direction to a second optical axis direction, three ball members spaced apart from a rotational axis of the moving body, the three ball members configured to rotatably support the moving body, and a groove arrangement disposed on at least one of the moving body and the fixed body, and configured to contact with the three ball members. The three ball members and the groove arrangement form six contact points.

A pixel includes a photodiode and first and second transistors, the first and second transistors being coupled in series. One of the first and second transistors is a P channel transistor and the other is an N channel transistor. An electronic device may include one or more of the pixels.