Techniques for facilitating readout addressing verification systems and methods are provided. In one example, an imaging device includes a focal plane array (FPA). The FPA includes a detector array. The detector array includes detectors. Each detector is configured to detect electromagnetic radiation. The FPA further includes a readout circuit configured to perform a readout to obtain image data from each of the detectors. The imaging device further includes a processing circuit. The processing circuit is configured to apply, to the FPA, a plurality of control signals associated with a readout of a subset of the detectors. The processing circuit is further configured to generate a verification value based on the plurality of control signals. The processing circuit is further configured to perform a verification of the plurality of control signals based at least on the verification value. Related methods and systems are also provided.

A photoelectric conversion apparatus includes a driving unit and a plurality of pixels. The pixel includes a first photoelectric conversion unit, a second photoelectric conversion unit, a charge-voltage conversion unit, a first transfer transistor, a second transfer transistor, a reset transistor, a microlens configured to condense incident light to the first photoelectric conversion unit and the second photoelectric conversion unit, and an output unit. The driving unit performs a first operation including a first reset operation and a first readout operation, and a second operation including a second reset operation and a second readout operation.

A photoelectric conversion apparatus includes a driving unit and a plurality of pixels. The pixel includes a first photoelectric conversion unit, a second photoelectric conversion unit, a charge-voltage conversion unit, a first transfer transistor, a second transfer transistor, a reset transistor, a microlens configured to condense incident light to the first photoelectric conversion unit and the second photoelectric conversion unit, and an output unit. The driving unit performs a first operation including a first reset operation and a first readout operation, and a second operation including a second reset operation and a second readout operation.

A photoelectric conversion device includes a substrate provided with pixels each including a photoelectric converter that accumulates charge generated by an incidence of light, a charge holding portion that holds charge transferred from the photoelectric converter, and an amplifier unit that includes an input node that receives charge transferred from the charge holding portion, a metal film disposed over a side of a first surface of the substrate so as to cover at least the charge holding portion, and a trench structure provided in the substrate on the side of the first surface of the substrate. The photoelectric conversion device is configured such that the light is incident from the side of the first surface of the substrate. The trench structure is disposed between the photoelectric converter and the charge holding portion of a first pixel.

An image sensor includes: a pixel substrate that includes a plurality of pixels each having a photoelectric conversion unit that generates an electric charge through photoelectric conversion executed on light having entered therein and an output unit that generates a signal based upon the electric charge and outputs the signal; and an arithmetic operation substrate that is laminated on the pixel substrate and includes an operation unit that generates a corrected signal by using a reset signal generated after the electric charge in the output unit is reset and a photoelectric conversion signal generated based upon an electric charge generated in the photoelectric conversion unit and executes an arithmetic operation by using corrected signals each generated in correspondence to one of the pixels.

Various implementations disclosed herein include devices, systems, and methods that buffer events in device memory during synchronous readout of a plurality of frames by a sensor. Various implementations disclosed herein include devices, systems, and methods that disable a sensor communication link until the buffered events are sufficient for transmission by the sensor. In some implementations, the sensor using a synchronous readout may select a readout mode for one or more frames based on how many of the pixels are detecting events. In some implementations, a first mode that reads out only data for a low percentage of pixels that have events uses the device memory and a second mode bypasses the device memory based on accumulation criteria such as high percentage of pixels detecting events. In the second mode, less data per pixel may be readout.

Imaging devices are disclosed. In one example, an imaging device includes a photoelectric conversion unit with plural photoelectric conversion elements, a detector that outputs a detection signal indicating whether or not an amount of change in the electric signal of each of the photoelectric conversion elements exceeds a predetermined threshold value, a pixel signal generation unit that generates a pixel signal on the basis of the electric signal, a transfer controller that controls transfer of the electric signal to the pixel signal generation unit, and an analog-to-digital converter that converts the pixel signal into a digital signal. The low-potential-side reference potentials of the photoelectric conversion unit, the detector, the pixel signal generation unit, and the analog-to-digital converter, and the off-potential of the transfer controller include three or more potentials having different potential levels.

A semiconductor device according to an embodiment includes a plurality of element arrays, a signal-processing circuit, and a comparison-voltage generation circuit. Each element array is selectively connected to a vertical signal line and includes an amplification transistor configured to output a first analog signal on the basis of an input analog voltage and an actual value of variation of a characteristic value of each element array included in the plurality of element arrays. The comparison-voltage generation circuit is configured to output a gradually increasing or gradually decreasing comparison voltage. The signal-processing circuit includes a storage circuit and is configured to compare the first analog signal with the comparison voltage and store a timing at which the comparison voltage and a value of a second analog signal generated by adding a predetermined absolute value to the first analog signal match each other onto the storage circuit.

An imaging apparatus including a light source is provided. The imaging apparatus includes a light-emitting device and a photoelectric conversion device in a pixel, and a pixel circuit has a function of outputting third data generated by multiplying obtained first data by second data (weight). Calculating the third data externally enables more detailed information on a subject with respect to a specific wavelength to be obtained. In addition, reading out collectively a plurality of pixels to which proper weight is given enables output of difference data between pixels and the like, which allows external calculation to be omitted.

In a solid-state imaging element that transfers data in a vertical direction, the number of times of transfer is reduced. The solid-state imaging element is provided with a plurality of storage units and a data transfer circuit. In the solid-state imaging element, each of the plurality of storage units is provided with a holding unit that holds predetermined reset data and signal data according to an amount of light, and an arithmetic circuit that obtains a difference between the reset data and the signal data to output as pixel data. Furthermore, the data transfer circuit in the solid-state imaging element transfers the output pixel data.