A solid-state imaging element according to the present disclosure includes a photoelectric conversion layer, a first insulating layer (101), and a second insulating layer (102). The photoelectric conversion layer (photoelectric conversion film PD) includes an insulating film (GFa), a charge storage layer (203), and a photoelectric conversion film (PD) stacked between a first electrode (201) and a second electrode (202). The first insulating layer (101) is provided with gates of some pixel transistors in which the charge storage layer serves as a source, a drain, and a channel in a plurality of pixel transistors that processes signal charges photoelectrically converted by the photoelectric conversion film (PD). The second insulating layer (102) is provided with a pixel transistor other than the some pixel transistors in the plurality of pixel transistors.

A semiconductor device according to the present disclosure includes: a first charge accumulation unit capable of accumulating a charge; a first initialization unit that is connected to the first charge accumulation unit and initializes the first charge accumulation unit; and a first voltage switching unit that is connected to the first initialization unit and is capable of selectively supplying a first voltage and a second voltage different from the first voltage to the first initialization unit.

In a solid-state imaging element equipped with per-column ADCs, noise is reduced. A test signal source generates a test signal of a predetermined level. An analog-to-digital converter increases/decreases an analog signal according to an analog gain selected from among a plurality of analog gains, and converts the increased/decreased analog signal to a digital signal. An input switching section inputs, as the analog signal, either a test signal or a pixel signal to the analog-to-digital converter. A correction value calculation section obtains, on the basis of the test signal and the digital signal, a correction value for correcting an error in the selected analog gain, and outputs the correction value. A correction section corrects the digital signal according to the outputted correction value.

In a solid-state imaging element equipped with per-column ADCs, noise is reduced. A test signal source generates a test signal of a predetermined level. An analog-to-digital converter increases/decreases an analog signal according to an analog gain selected from among a plurality of analog gains, and converts the increased/decreased analog signal to a digital signal. An input switching section inputs, as the analog signal, either a test signal or a pixel signal to the analog-to-digital converter. A correction value calculation section obtains, on the basis of the test signal and the digital signal, a correction value for correcting an error in the selected analog gain, and outputs the correction value. A correction section corrects the digital signal according to the outputted correction value.

An image sensor includes a pixel array including a first pixel and a second pixel which are connected to a same column line, the first pixel including 2N sub-pixels sharing a first floating diffusion node and the second pixel including 2N sub-pixels sharing a second floating diffusion node, wherein N is a positive integer greater than or equal to two, a timing generator configured to change a reset order and a readout order of 4N sub-pixels included in the first pixel and the second pixel, according to an exposure time setting value, and output a row address according to the changed orders, and a row driver configured to drive the pixel array based on the row address.

An image sensor includes a pixel array including a first pixel and a second pixel which are connected to a same column line, the first pixel including 2N sub-pixels sharing a first floating diffusion node and the second pixel including 2N sub-pixels sharing a second floating diffusion node, wherein N is a positive integer greater than or equal to two, a timing generator configured to change a reset order and a readout order of 4N sub-pixels included in the first pixel and the second pixel, according to an exposure time setting value, and output a row address according to the changed orders, and a row driver configured to drive the pixel array based on the row address.

An imaging device includes: a photoelectric converter whose sensitivity changes depending on a value of a voltage to be applied; and a voltage supply circuit that alternately supplies a first voltage and a second voltage, which is different from the first voltage, to the photoelectric converter, in which in a first frame period, a length of a first period from a first point in time at which the first voltage is switched to the second voltage until a second point in time at which the first voltage is switched to the second voltage subsequently to the first point in time differs from a length of a second period from the second point in time until a third point in time at which the first voltage is switched to the second voltage subsequently to the second point in time.

The present invention relates to an imaging apparatus for realizing real time image display and the like while controlling the processing performance of an external circuit and the size of the circuit when outputting a large amount of data from an image sensor at a high speed, and is provided with (a) an image sensor including, a plurality of light receiving units disposed in rows and columns, an A/D conversion unit, a compression unit for compressing outputs from the A/D conversion unit row by row, and (b) a first data processing unit for thinning compressed data row by row, a first data decompression unit that decompresses outputs of the first data processing unit; and a first image processing unit which carries out a predetermined processing on outputs of the first data decompression unit.

An electronic device includes an image sensor, a light transmission module including light transmission elements, a light reception module including light reception elements, and a processor operatively connected with the image sensor, the light transmission module, and the light reception module. The processor obtains first distance information through the light transmission elements and the light reception elements, obtains a first frame and a second frame through the image sensor, obtains area information related to an area of the second frame, in which a difference in pixel value from the first frame is a set value or more, through the image sensor, activates a light transmission element corresponding to the area among the light transmission elements based on the area information, and obtains second distance information about the area through the activated light transmission element and at least one of the light reception elements.

An electronic device includes an image sensor, a light transmission module including light transmission elements, a light reception module including light reception elements, and a processor operatively connected with the image sensor, the light transmission module, and the light reception module. The processor obtains first distance information through the light transmission elements and the light reception elements, obtains a first frame and a second frame through the image sensor, obtains area information related to an area of the second frame, in which a difference in pixel value from the first frame is a set value or more, through the image sensor, activates a light transmission element corresponding to the area among the light transmission elements based on the area information, and obtains second distance information about the area through the activated light transmission element and at least one of the light reception elements.