An image sensor includes a logic die, including column readout circuits and bitlines connected to the column readout circuits. A sensor die is overlaid on the logic die. The image sensor includes an array of detector elements, each including a sensing circuit on the sensor die, which includes a photodiode, a floating diffusion node a charge sharing transistor coupled between the photodiode and the floating diffusion node, a reset transistor coupled to the floating diffusion node, and a source follower transistor. In each detector element, a pixel circuit on the logic die includes a select transistor, which has an input coupled to the output of the source follower and an output coupled to one of the bitlines. Two current memory circuits are coupled to the input of the select transistor and are configured to sense and output respective signals indicative of levels of noise in the detector element.

An image sensor includes a logic die, including column readout circuits and bitlines connected to the column readout circuits. A sensor die is overlaid on the logic die. The image sensor includes an array of detector elements, each including a sensing circuit on the sensor die, which includes a photodiode, a floating diffusion node a charge sharing transistor coupled between the photodiode and the floating diffusion node, a reset transistor coupled to the floating diffusion node, and a source follower transistor. In each detector element, a pixel circuit on the logic die includes a select transistor, which has an input coupled to the output of the source follower and an output coupled to one of the bitlines. Two current memory circuits are coupled to the input of the select transistor and are configured to sense and output respective signals indicative of levels of noise in the detector element.

A detector includes a unit cell array in which a plurality of unit cells are arranged. The plurality of unit cells include a first unit cell including a first conversion element and a first amplification transistor including a control electrode connected to the first conversion element, the first unit cell being configured to output a signal obtained by amplifying the signal charge by the first amplification transistor, and a second unit cell including a second amplification transistor including a control electrode connected to a constant voltage source, the second amplification transistor being configured to output a signal corresponding to a voltage of the constant voltage source by the second amplification transistor. The first unit cell and the second unit cell are disposed in an irradiated region in the unit cell array, the irradiated region being configured to be irradiated with the energy beam.

A detector includes a unit cell array in which a plurality of unit cells are arranged. The plurality of unit cells include a first unit cell including a first conversion element and a first amplification transistor including a control electrode connected to the first conversion element, the first unit cell being configured to output a signal obtained by amplifying the signal charge by the first amplification transistor, and a second unit cell including a second amplification transistor including a control electrode connected to a constant voltage source, the second amplification transistor being configured to output a signal corresponding to a voltage of the constant voltage source by the second amplification transistor. The first unit cell and the second unit cell are disposed in an irradiated region in the unit cell array, the irradiated region being configured to be irradiated with the energy beam.

A photodetection device according to the present disclosure includes: a light-receiving section that includes a light-receiving element, and generates a pulse signal including a pulse corresponding to a result of light reception by the light-receiving element; a plurality of switches that is each turned on or off on the basis of a corresponding control signal of a plurality of control signals, and each transmits the pulse signal by being turned on in a pulse period of the corresponding control signal of the plurality of control signals; a plurality of counters that is provided corresponding to the plurality of switches, and each performs counting processing on the basis of the pulse signal supplied through a corresponding switch of the plurality of switches to generate a first count value; and a signal generator that generates the plurality of control signals in a detection period to sequentially shift the respective pulse periods of the plurality of control signals by a unit period having a shorter time length than the pulse period.

A photodetection device according to the present disclosure includes: a light-receiving section that includes a light-receiving element, and generates a pulse signal including a pulse corresponding to a result of light reception by the light-receiving element; a plurality of switches that is each turned on or off on the basis of a corresponding control signal of a plurality of control signals, and each transmits the pulse signal by being turned on in a pulse period of the corresponding control signal of the plurality of control signals; a plurality of counters that is provided corresponding to the plurality of switches, and each performs counting processing on the basis of the pulse signal supplied through a corresponding switch of the plurality of switches to generate a first count value; and a signal generator that generates the plurality of control signals in a detection period to sequentially shift the respective pulse periods of the plurality of control signals by a unit period having a shorter time length than the pulse period.

An image sensor includes: a pixel array, the pixel array including a plurality of pixels, and each pixel including a plurality of sub-pixels, wherein the sub-pixels in a same pixel share a same floating diffusion region (FD); each pixel including a pixel circuit provided with a plurality of output ends, and the pixel circuit being used for transferring charges generated by at least one photoelectric conversion element in a same pixel to the FD for accumulation, and selecting at least one output end to output analog signals corresponding to the charges in the FD; and a plurality of first conversion circuits, each first conversion circuits being used for performing analog-to-digital conversion on each analog signal outputted by a same pixel circuit, and reading a converted digital signal together with the pixel circuit on the basis of a full-resolution output mode or a first-stage combined output mode.

An image sensor includes: a pixel array, the pixel array including a plurality of pixels, and each pixel including a plurality of sub-pixels, wherein the sub-pixels in a same pixel share a same floating diffusion region (FD); each pixel including a pixel circuit provided with a plurality of output ends, and the pixel circuit being used for transferring charges generated by at least one photoelectric conversion element in a same pixel to the FD for accumulation, and selecting at least one output end to output analog signals corresponding to the charges in the FD; and a plurality of first conversion circuits, each first conversion circuits being used for performing analog-to-digital conversion on each analog signal outputted by a same pixel circuit, and reading a converted digital signal together with the pixel circuit on the basis of a full-resolution output mode or a first-stage combined output mode.

An image sensor chip with depth information is provided. The image sensor chip includes an SPAD array, a time-to-digital converter module, a storage circuit, and a data processing circuit. The SPAD array includes a plurality of image sensor units, and each of the image sensor units includes a plurality of SPAD units and a decision circuit, wherein each of the SPAD units outputs a photon detection result within a scan period, and the decision circuit generates an image-sensing signal based on the photon detection results. The time-to-digital converter module generates a plurality of first time data in response to the image-sensing signals. The storage circuit stores the first time data temporarily. The data processing unit reads the first time data from the storage circuit and generates a plurality of second time data in response to the first time data.

An image sensor chip with depth information is provided. The image sensor chip includes an SPAD array, a time-to-digital converter module, a storage circuit, and a data processing circuit. The SPAD array includes a plurality of image sensor units, and each of the image sensor units includes a plurality of SPAD units and a decision circuit, wherein each of the SPAD units outputs a photon detection result within a scan period, and the decision circuit generates an image-sensing signal based on the photon detection results. The time-to-digital converter module generates a plurality of first time data in response to the image-sensing signals. The storage circuit stores the first time data temporarily. The data processing unit reads the first time data from the storage circuit and generates a plurality of second time data in response to the first time data.