A Complementary Metal Oxide Semiconductor (CMOS) Image Sensor (CIS), includes a pixel circuit, a VSL circuit, and an amplifier. The pixel circuit may generate a reset voltage and a signal voltage, based on a power supply connected to the pixel circuit and/or intensity of light captured by the pixel circuit. The VSL circuit may store pixel information in a pixel load based on settling a voltage at the pixel load to the signal voltage and/or set the voltage at the pixel load to a pixel reset voltage based on settling the voltage at the pixel load to the reset voltage. The amplifier may generate a voltage, based on varying a resistance at an input of the amplifier, to enable the VSL circuit to store the pixel information and/or set the voltage at the pixel load to the pixel reset voltage.

A pixel includes a transfer gate, and a sample structure having a first sample stage and a second sample stage. The transfer gate and the first and the second sample stages are configured to be operated in conjunction with a light source in response to a control signal. The first sample stage is configured to sample a first sample value that depends on radiation incident on the photosensitive element from an object or a scene that is illuminated by the light source emitting light at a first output power, while the second sample stage is configured to sample a second sample value that depends on radiation incident on the photosensitive element from the object or the scene that is illuminated by the light source emitting light at a second output power. The first output power is different, in particular significantly different, from the second output power.

A pixel includes a transfer gate, and a sample structure having a first sample stage and a second sample stage. The transfer gate and the first and the second sample stages are configured to be operated in conjunction with a light source in response to a control signal. The first sample stage is configured to sample a first sample value that depends on radiation incident on the photosensitive element from an object or a scene that is illuminated by the light source emitting light at a first output power, while the second sample stage is configured to sample a second sample value that depends on radiation incident on the photosensitive element from the object or the scene that is illuminated by the light source emitting light at a second output power. The first output power is different, in particular significantly different, from the second output power.

An image sensor including an ADC circuit receiving pixel data to be supplied in parallel from the a pixel array, outputting a reference signal in accordance with a digital code, comparing the reference signal and the pixel data, and outputting the digital code at which the reference signal and the pixel data have a predetermined relation, the ADC circuit including a ramp-signal generating circuit outputting a ramp signal having a gradient with respect to change of the digital code, the gradient being different between when the digital code is in a first range and when the digital code is in a second range different from the first range and an attenuator receiving the ramp signal to be supplied and outputting the reference signal having a gradient being the same between when the digital code is in the first range and when the digital code is in the second range.

A solid-state imaging device includes a plurality of pixel regions. Each of the plurality of pixel regions includes a first photoelectric conversion unit and a second photoelectric conversion unit. The second photoelectric conversion unit overlaps the first photoelectric conversion unit when viewed in a light incident direction. At least one of the first photoelectric conversion unit and the second photoelectric conversion unit is an embedded unit. The first photoelectric conversion unit and the second photoelectric conversion unit are electrically connected to mutually different types of readout circuits.

A solid-state imaging device includes a plurality of pixel regions. Each of the plurality of pixel regions includes a first photoelectric conversion unit and a second photoelectric conversion unit. The second photoelectric conversion unit overlaps the first photoelectric conversion unit when viewed in a light incident direction. At least one of the first photoelectric conversion unit and the second photoelectric conversion unit is an embedded unit. The first photoelectric conversion unit and the second photoelectric conversion unit are electrically connected to mutually different types of readout circuits.

A photodetection device according to the present disclosure includes: a pixel; a reference signal generation unit; a comparison circuit; and a first switch. The pixel is configured to generate a pixel signal. The reference signal generation unit is configured to generate a reference signal. The comparison circuit includes a first-stage amplifier circuit and a second-stage amplifier circuit that is coupled to the first-stage amplifier circuit through a connection node. The first-stage amplifier circuit is configured to output a first output signal corresponding to a comparison operation based on the pixel signal and the reference signal. The second-stage amplifier circuit is configured to output a second output signal corresponding to the first output signal outputted from the first-stage amplifier circuit through the connection node. The first switch has one end and another end. The one end is coupled to the connection node. The first switch allows impedance and a voltage at the connection node to change.

The imaging apparatus includes: a processor; and an imaging element that has column signal lines, which are for reading out signals and extend in a first direction, and that has a first pixel group and a second pixel group arranged in the first direction, the first pixel group including phase difference pixels and imaging pixels arranged in a second direction intersecting the first direction and the second pixel group including imaging pixels arranged in the second direction. The processor is configured to set one of a first exposure time, during which the first pixel group is exposed, and a second exposure time, during which the second pixel group is exposed, shorter than the other, and determine which of the first exposure time and the second exposure time is made shorter than the other on the basis of information of a subject image.

The imaging apparatus includes: a processor; and an imaging element that has column signal lines, which are for reading out signals and extend in a first direction, and that has a first pixel group and a second pixel group arranged in the first direction, the first pixel group including phase difference pixels and imaging pixels arranged in a second direction intersecting the first direction and the second pixel group including imaging pixels arranged in the second direction. The processor is configured to set one of a first exposure time, during which the first pixel group is exposed, and a second exposure time, during which the second pixel group is exposed, shorter than the other, and determine which of the first exposure time and the second exposure time is made shorter than the other on the basis of information of a subject image.

Provided are a solid-state imaging device, a method for driving a solid-state imaging device and an electronic apparatus capable not only of having advanced global shutter and autofocus functions but also of sufficiently achieving single exposure high dynamic range (SEHDR) performance, thereby substantially realizing enhanced dynamic range and frame rate.

In an image capturing mode, a reading part controls driving of a conversion signal reading part such that the conversion signal reading part keeps first and second transfer transistors in a conduction state in the same transfer period and performs a read-out operation on a pixel signal corresponding to a sum of charges stored in a first photodiode and charges stored in a second photodiode with a first conversion gain and subsequently with a second conversion gain.