An optical heating device includes: a chamber that accommodates a workpiece; a supporter that supports the workpiece in the chamber; a plurality of solid-state light sources emitting heating light toward a main surface of the workpiece; a plurality of reference light sources that emit reference light toward the main surface of the workpiece when power of the same power value is supplied to each of the reference light sources; a plurality of photodetectors that corresponds to the respective reference light sources, and that output signals in response to the intensity of the reference light that has been received; and a controller that executes a reference mode and a heating mode, the reference light sources and the corresponding photodetectors are arranged to face each other through the workpiece, and the photodetectors are configured to receive the reference light emitted from the reference light sources and transmitted through the workpiece.

An optical heating apparatus includes a supporter on which a workpiece is placed and a plurality of light source units each including an LED substrate on which multiple LED elements are mounted. A first main surface of the LED substrate fails to be parallel to a second main surface of the workpiece. Each of the light source units is arranged to satisfy the following formula: 2 tan 2θ/cos θ≥D2/D1, where θ is an angle formed by the first main surface and the second main surface, D1 is a separation distance between a first LED element and the workpiece, D2 is a separation distance between the first LED element and a second LED element, the first LED element being closest to the second main surface in a normal direction thereof, and the second LED element being farthest to the second main surface in the normal direction thereof.

When pressure in a chamber is brought to atmospheric pressure and the chamber is filled with an inert gas atmosphere, the atmosphere in the chamber is sucked into an oxygen concentration analyzer through a sampling line such that oxygen concentration in the chamber is measured by the oxygen concentration analyzer. When the pressure in the chamber is reduced to less than atmospheric pressure, nitrogen gas is supplied to the oxygen concentration analyzer through an inert gas supply line simultaneously with suspending the measurement of oxygen concentration in the chamber. Even when the measurement of oxygen concentration in the chamber is suspended, reverse flow to the oxygen concentration analyzer from a gas exhaust pipe can be prevented, and the oxygen concentration analyzer can be prevented from being exposed to exhaust from the chamber. The configuration results in maintaining measurement accuracy of the oxygen concentration analyzer in a low oxygen concentration range.

A heating device and a heating chamber are provided, comprising a base plate (21), at least three supporting columns (22) and a heating assembly, where the at least three supporting columns are arranged vertically on the base plate and are distributed at intervals along a circumferential direction of the base plate Top ends of the at least three supporting columns form a bearing surface for supporting a to-be-heated member (23). The heating assembly includes a heating light tube (24) and a thermal radiation shielding assembly, where the heating light tube is disposed above the base plate and below the bearing surface. A projection of an effective heating area formed by uniform distribution of the heating light tube on the base plate covers a projection of the bearing surface on the base plate. The thermal radiation shielding assembly shields heat radiated by the heating light tube towards surroundings and bottom.

A curable resin composition comprising: a) an epoxy resin; b) an anhydride hardener; c) a polyol; d) a core shell rubber, and (e) a catalyst, is disclosed. When cure the resin composition can be used to formulate composites, coatings, laminates, and adhesives.

The embodiments described herein generally relate to a lamphead assembly with an absorbing upper surface in a thermal processing chamber. In one embodiment, a processing chamber includes an upper structure, a lower structure, a base ring connecting the upper structure to the lower structure, a substrate support disposed between the upper structure and the lower structure, a lower structure disposed below the substrate support, a lamphead positioned proximate to the lower structure with one or more fixed lamphead positions formed therein, the lamphead comprising a first surface proximate the lower structure and a second surface opposite the first surface, wherein the first surface comprises an absorptive coating and one or more lamp assemblies each comprising a radiation generating source and positioned in connection with the one or more fixed lamphead positions.

A semiconductor manufacturing system or process, such as an ion implantation system, apparatus and method, including a component or step for heating a semiconductor workpiece are provided. An optical heat source emits light energy to heat the workpiece. The optical heat source is configured to provide minimal or reduced emission of non-visible wavelengths of light energy and emit light energy at a wavelength in a maximum energy light absorption range of the workpiece.

Known apparatuses for irradiating a substrate include a housing and, within the housing, a receptacle for the substrate having a circular irradiation surface and a first emitter for generating optical radiation having a first emitter tube arranged in a plane of curvature extending parallel to the irradiation surface and having an emitter tube end, whereby the receptacle and the first emitter can be moved with respect to each other. In these apparatuses, the irradiation surface includes first and second semi-circular surface portions. An improvement of the known apparatuses, which enables the substrate to have a rotationally symmetrical, homogeneous temperature distribution while keeping the complexity of design and control technology minimal, provides a first emitter tube having a curved illumination length section, extending with a mirror symmetrical-oval basic shape in the plane of curvature, wherein the first illumination length section is associated essentially with one of the semicircular surface portions.

Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support.

A process kit for use in a processing chamber includes an outer liner, an inner liner configured to be in fluid communication with a gas injection assembly and a gas exhaust assembly of a processing chamber, a first ring reflector disposed between the outer liner and the inner liner, a top plate and a bottom plate attached to an inner surface of the inner liner, the top plate and the bottom plate forming an enclosure together with the inner liner, a cassette disposed within the enclosure, the cassette comprising a plurality of shelves configured to retain a plurality of substrates thereon, and an edge temperature correcting element disposed between the inner liner and the first ring reflector.