A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.

A light diffusion plate made of quartz and provided with a plurality of grooves each having an inclined surface is placed on an upper chamber window so as to be in opposed relation to a central portion of a semiconductor wafer. Flashes of light emitted from flash lamps and passing by the side of the light diffusion plate impinge upon a peripheral portion of the semiconductor wafer. On the other hand, flashes of light emitted from the flash lamps and entering the light diffusion plate are refracted by the inclined surfaces of the plurality of grooves. Part of the light entering the light diffusion plate is diffused toward the peripheral portion of the semiconductor wafer. As a result, this increases the amount of light impinging upon the peripheral portion of the semiconductor wafer, and decreases the amount of light impinging upon the central portion of the semiconductor wafer. Thus, the in-plane uniformity of an illuminance distribution on the semiconductor wafer is increased.

A substrate support device relating to technology disclosed in the description of the present application includes: a holding plate for opposing a substrate bowable by being heated by irradiation with flash light; and a plurality of substrate support pins provided on the holding plate and being for supporting the substrate, wherein the plurality of substrate support pins are arranged at locations where a volume of a space between the holding plate and the substrate in an unbowed state and a volume of a space between the holding plate and the substrate in a bowed state are equal to each other. Breakage of the substrate can be suppressed in a case where the substrate is bowed by flash light.

A silicon semiconductor wafer is transported into a chamber, and preheating of the semiconductor wafer is started in a nitrogen atmosphere by irradiation with light from halogen lamps. When the temperature of the semiconductor wafer reaches a predetermined switching temperature in the course of the preheating, oxygen gas is supplied into the chamber to change the atmosphere within the chamber from the nitrogen atmosphere to an oxygen atmosphere. Thereafter, a front surface of the semiconductor wafer is heated for an extremely short time period by flash irradiation. Oxidation is suppressed when the temperature of the semiconductor wafer is relatively low below the switching temperature, and is caused after the temperature of the semiconductor wafer becomes relatively high. As a result, a dense, thin oxide film having good properties with fewer defects at an interface with a silicon base layer is formed on the front surface of the semiconductor wafer.

A method may include providing a substrate on a clamp, and directing radiation from an illumination source to the substrate when the substrate is disposed on the clamp during substrate processing, wherein the radiation is characterized by a radiation energy, wherein at least a portion of the radiation energy is equal to or greater than 2.5 eV.

An apparatus for treating a substrate includes a process chamber having a treatment space defined therein, a support unit for supporting the substrate in the treatment space, a liquid supply unit for supplying treating liquid to the substrate supported on the support unit, and a heating unit disposed in the support unit for heating the substrate supported on the support unit, wherein the heating unit includes a plurality of lamps to heat the substrate, and a window disposed above the lamps to transmit light emitted from the lamps, wherein the window includes a base in a form of a plate, and light adjustment means formed on the base to spread or converge light emitted from the lamps.

Halogen lamps arranged in two, upper and lower, tiers to intersect each other in a lattice pattern are provided under a chamber for receiving a semiconductor wafer therein. In a location where the halogen lamps in the upper and lower tiers overlap each other, a reflector is provided such that an outer wall surface of a glass tube of each halogen lamp is open on upper and lower sides. In the location where the halogen lamps in the upper and lower tiers overlap each other, light emitted upwardly from a halogen lamp in the lower tier is transmitted through the open upper and lower portions of the outer wall surface of the glass tube of a halogen lamp in the upper tier, and is directed further upwardly. Thus, the light is prevented from entering the glass tube of the halogen lamp in the lower tier again.

Embodiments described herein generally relate to an in-situ metrology system that can constantly provide an uninterrupted optical access to a substrate disposed within a process chamber. In one embodiment, a metrology system for a substrate processing chamber is provided. The metrology system includes a sensor view pipe coupling to a quartz dome of a substrate processing chamber, a flange extending radially from an outer surface of the sensor view pipe, and a viewport window disposed on the flange, the viewport window having spectral ranges chosen for an optical sensor that is disposed on or adjacent to the viewport window.

A thermal processing apparatus according to the present invention includes: a support including quartz and being for supporting a substrate from a first side within a chamber; a flash lamp disposed on a second side and being for heating the substrate by irradiating the substrate with a flash of light; a continuous illumination lamp disposed on the second side of the substrate and being for continuously heating the substrate; a light blocking member disposed to surround the substrate in plan view; and a radiation thermometer disposed on the first side of the substrate and being for measuring a temperature of the substrate, wherein the radiation thermometer measures the temperature of the substrate by receiving light at a wavelength capable of being transmitted through the support. Accuracy of measurement of the temperature of the substrate can thereby be increased.

A method may include providing a substrate on a clamp, and directing radiation from an illumination source to the substrate when the substrate is disposed on the clamp during substrate processing, wherein the radiation is characterized by a radiation energy, wherein at least a portion of the radiation energy is equal to or greater than 2.5 eV.