H05B41/34

VACUUM ULTRA VIOLET LIGHT SOURCE DEVICE, LIGHT IRRADIATION DEVICE AND METHOD FOR PATTERNING SELF ASSEMBLED MONOLAYER
20170199463 · 2017-07-13 · ·

Disclosed herein a vacuum ultra violet light source device that is capable of suppressing an amount of ozone generation when the vacuum ultra violet light is emitted into an atmosphere containing oxygen, a light irradiation device incorporating the vacuum ultra violet light device, and a method of patterning a self-assembled monolayer employing the light irradiation device. The light irradiation device is configured to irradiate a self-assembled monolayer (SAM) formed on a workpiece with light containing vacuum ultra violet light through a mask M on which a prescribed pattern is formed so as to perform a patterning process of the SAM. The light containing the vacuum ultra violet light to be irradiated onto the SAM is light that is pulsed light and has a duty ratio of light emission equal to or greater than 0.00001 and equal to or less than 0.01.

VACUUM ULTRA VIOLET LIGHT SOURCE DEVICE, LIGHT IRRADIATION DEVICE AND METHOD FOR PATTERNING SELF ASSEMBLED MONOLAYER
20170199463 · 2017-07-13 · ·

Disclosed herein a vacuum ultra violet light source device that is capable of suppressing an amount of ozone generation when the vacuum ultra violet light is emitted into an atmosphere containing oxygen, a light irradiation device incorporating the vacuum ultra violet light device, and a method of patterning a self-assembled monolayer employing the light irradiation device. The light irradiation device is configured to irradiate a self-assembled monolayer (SAM) formed on a workpiece with light containing vacuum ultra violet light through a mask M on which a prescribed pattern is formed so as to perform a patterning process of the SAM. The light containing the vacuum ultra violet light to be irradiated onto the SAM is light that is pulsed light and has a duty ratio of light emission equal to or greater than 0.00001 and equal to or less than 0.01.

Input surge protection circuit and method for a non-isolated buck-boost LED driver

An LED driver is provided with input surge absorbing capacity. A surge protection circuit branch is coupled across output lines from a DC power source, in parallel with and between a filtering capacitor and a non-isolated buck-boost PFC circuit. A variable impedance device such as a spark gap is coupled to a first power line and having a breakdown voltage to operate as an open circuit during normal operating conditions with respect to a peak input voltage across the capacitor. Responsive to a surge condition with respect to excess energy across the capacitor, the spark gap operates as a closed circuit, and a second capacitor coupled between the spark gap and the second line absorbs the excess energy. Responsive to a return to normal operating conditions, the spark gap reverts to an open state and the accumulated surge energy is discharged from the second capacitor to circuit ground.

Strobe spin art
12233664 · 2025-02-25 ·

An apparatus for making spin art is provided. In the apparatus, a spinnable platen is conformed for removably supporting a substrate, a stroboscope is arranged for flash illumination of a substrate mounted on the spinnable platen, and at least one laser pointer is cooperatively configured with a pigment depositor such that in operation, the pointer illuminates the substrate portion that is user-selected for deposition of pigment material by the pigment depositor.

Strobe spin art
12233664 · 2025-02-25 ·

An apparatus for making spin art is provided. In the apparatus, a spinnable platen is conformed for removably supporting a substrate, a stroboscope is arranged for flash illumination of a substrate mounted on the spinnable platen, and at least one laser pointer is cooperatively configured with a pigment depositor such that in operation, the pointer illuminates the substrate portion that is user-selected for deposition of pigment material by the pigment depositor.

Method and apparatus for curing thin films on low-temperature substrates at high speeds

A curing apparatus for thermally processing thin films on low-temperature substrates at high speeds is disclosed. The curing apparatus includes a strobe head, a strobe control module and a conveyor control module. The strobe control module controls the power, duration and repetition rate of a set of pulses generated by a flash lamp on the strobe head. The conveyor control module along with the strobe control module provide real-time synchronization between the repetition rate of the set of pulses and the speed at which the substrate is being moved under the strobe head, according to the speed information.

Method and apparatus for curing thin films on low-temperature substrates at high speeds

A curing apparatus for thermally processing thin films on low-temperature substrates at high speeds is disclosed. The curing apparatus includes a strobe head, a strobe control module and a conveyor control module. The strobe control module controls the power, duration and repetition rate of a set of pulses generated by a flash lamp on the strobe head. The conveyor control module along with the strobe control module provide real-time synchronization between the repetition rate of the set of pulses and the speed at which the substrate is being moved under the strobe head, according to the speed information.

THERMAL PROCESSING METHOD THROUGH LIGHT IRRADIATION
20170117152 · 2017-04-27 ·

When an insulated gate bipolar transistor is incorporated in a drive circuit of a flash lamp, so that a light emission pattern of the flash lamp is freely defined, a temperature change pattern of a surface of a semiconductor wafer that receives the emission of flash light can be adjusted. The length of diffusion of impurities can be controlled by rising a surface temperature of the semiconductor wafer from a preheating temperature to a diffusion temperature through emission of flash light and maintaining the surface temperature at the diffusion temperature for a time period not shorter than 1 millisecond and not longer than 10 milliseconds. Subsequently, the impurities can be activated by rising the surface temperature of the semiconductor wafer from the diffusion temperature to an activation temperature.

Intense pulse light (IPL) apparatus utilizing a pulse forming network (PFN)
12257449 · 2025-03-25 ·

An IPL apparatus utilizing a Pulse Forming Network (PFN) for generating a plurality of light pulse sequences, comprising a treatment unit comprising one or more lamps adapted to emit a plurality of light pulses towards a treatment face of the IPL apparatus, a PFN and a control unit adapted to operate the PFN to generate a regulated energized pulse driven to the lamp(s). The regulated energized pulse having a desired multi-level voltage waveform with a maximum voltage level and a minimum voltage level which is in a range of 30-50 percent of the maximum voltage level. Rapidly varying heat is induced by a sequence of the plurality of light pulses emitted by the lamp(s) according to the multi-level voltage waveform.

Intense pulse light (IPL) apparatus utilizing a pulse forming network (PFN)
12257449 · 2025-03-25 ·

An IPL apparatus utilizing a Pulse Forming Network (PFN) for generating a plurality of light pulse sequences, comprising a treatment unit comprising one or more lamps adapted to emit a plurality of light pulses towards a treatment face of the IPL apparatus, a PFN and a control unit adapted to operate the PFN to generate a regulated energized pulse driven to the lamp(s). The regulated energized pulse having a desired multi-level voltage waveform with a maximum voltage level and a minimum voltage level which is in a range of 30-50 percent of the maximum voltage level. Rapidly varying heat is induced by a sequence of the plurality of light pulses emitted by the lamp(s) according to the multi-level voltage waveform.