A method of controlling a temperature of the semiconductor device includes operating an semiconductor apparatus; maintaining a temperature of a vessel of the semiconductor apparatus with a first cooling output by a cooling controller; heating the vessel for removing a material on the vessel; transferring a first signal, by a converter, to the cooling controller when heating the vessel; and reducing the first cooling output to a second cooling output by the cooling controller base on the first signal.

An extreme ultraviolet light generation device may include: a chamber earthed to a ground, in which extreme ultraviolet light is generated by irradiating a metal target supplied inside with laser light; a target supply unit earthed to the ground and configured to output the target supplied into the chamber from a nozzle; an extraction electrode configured to exert electrostatic force on the target by applying a negative first potential to the extraction electrode; a first power supply configured to apply the first potential to the extraction electrode; an acceleration electrode unit configured to accelerate the target by applying a negative second potential lower than the first potential to the acceleration electrode unit; a second power supply configured to apply the second potential to the acceleration electrode unit; and a charge neutralizer disposed inside the acceleration electrode unit and configured to emit electrons onto the target.

A radiation source contains a collector module comprising an optical collector, positioned in a vacuum chamber with an emitting plasma, further comprising a means for debris mitigation which include at least two casings arranged to output debris-free homocentric beams of the short-wavelength radiation, coming to the optical collector preferably consisting of several identical mirrors. Outside each casing there are permanent magnets that create a magnetic field inside the casings to mitigate charged fraction of debris particles and provide the debris-free homocentric beams of short-wavelength radiation. Other debris mitigating techniques are additionally used. Preferably the plasma is laser-produced plasma of a liquid metal target supplied by a rotating target assembly to a focus area of a laser beam. The technical result of the invention is the creation of high-powerful high-brightness debris-free sources of short-wavelength radiation with large, preferably more than 0.25 sr, collection solid angle.

An example of the disclosure is a laser apparatus including a master oscillator capable of outputting a pulse laser beam, a plurality of optical amplifiers disposed on an optical path of the pulse laser beam outputted from the master oscillator and configured to sequentially amplify the pulse laser beam, an optical reflector capable of passing the pulse laser beam therethrough and reflecting a self-oscillation beam generated in one of the plurality of optical amplifiers, and an optical absorber capable of receiving and absorbing the self-oscillation beam reflected by the optical reflector.

X-ray sources including an electron source, an adjustment means for adjusting an orientation of the electron beam generated by the electron source, a focusing means configured to focus the electron beam in accordance with a focusing setting, a beam orientation sensor arranged to generate a signal indicating an orientation of the electron beam relative to a target position, and a controller that is operably connected to the focusing means, the beam orientation sensor and the adjustment means. Also, X-ray sources including a target orientation sensor and a target adjustment means, wherein the controller is configured to cause the beam adjustment means and/or target adjustment means to adjust the relative orientation between the electron beam and the target.

A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. An array of sensors sense the extreme ultraviolet radiation and charged particles emitted by the droplets. A control system analyses sensor signals from the sensors and adjusts plasma generation parameters responsive to the sensor signals.

An extreme ultraviolet light concentrating mirror may include a substrate, a multilayer reflection film provided on the substrate and configured to reflect extreme ultraviolet light, and a protective film provided on the multilayer reflection film. Here, the protective film may include a mixed film in which a network-forming oxide is mixed with an amorphous titanium oxide, or a mixed film in which two or more amorphous titanium oxide layers and two or more network-forming oxide layers are each alternately laminated.

An EUV light generation apparatus includes: a chamber; an EUV light condensing mirror positioned inside the chamber and having a reflective surface that determines a first focal point and a second focal point, the reflective surface and the second focal point being positioned on respective sides of a first surface; at least one magnet configured to generate a magnetic field at and around the first focal point; a first gas supply unit configured to supply first gas to the reflective surface in the chamber and opened near an outer peripheral part of the reflective surface; a second gas supply unit configured to supply second gas into the chamber and opened at a position between the first surface and the second focal point; and a discharge device configured to discharge gas inside the chamber and opened at a position between the first focal point and the at least one magnet.

An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. A deformable mirror is disposed in a path of the excitation laser. A controller is configured to adjust parameters of the excitation laser by controlling the deformable mirror based on a feedback parameter.

A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.