A contamination trap for use in a debris mitigation system of a radiation source, the contamination trap comprising a plurality of vanes configured to trap fuel debris emitted from a plasma formation region of the radiation source; wherein at least one vane or each vane of the plurality of vanes comprises a material comprising a thermal conductivity above 30 W m.sup.−1K.sup.−1.

A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.

An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH.sub.4 to Sn.

Disclosed is an apparatus and a method in which multiple, e.g., two or more pulses from a single laser source are applied to source material prior to application of a main ionizing pulse in which the multiple pulses are generated by a common laser source. The first pulse is directed towards the source material when the source material is at a first position and the second pulse is directed towards the source material when the source material is at a second position.

A target supply device includes a tank body portion holding a target substance; a communication portion connected to the tank body portion and including a filter that filters the melted target substance and a nozzle that discharges the target substance having passed through the filter; a main heater that heats the tank body portion; a sub-heater that heats the communication portion; and a control unit, the control unit being configured to set the main heater to a temperature higher than a melting point of the target substance before the target substance is melted, to set the sub-heater to a temperature lower than the melting point of the target substance until the target substance in the tank body portion is melted, and to set the sub-heater to a temperature higher than the melting point of the target substance after the target substance in the tank body portion is melted.

An extreme ultraviolet light generation apparatus may include a chamber device, a concentrating mirror, a central gas supply port configured to supply gas along a focal line passing through a first focal point and a second focal point from the center side of the reflection surface, and a first peripheral gas supply port disposed at a peripheral portion of the reflection surface and configured to supply gas in a direction from the outer side of the reflection surface toward the inner side of the reflection surface. The first peripheral gas supply port may supply gas, when viewed along the focal line, in an inclined direction inclined to a tangential direction side of the peripheral portion at the peripheral portion where the first peripheral gas supply port is located with respect to a first straight line passing through the first peripheral gas supply port and the focal line.

In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

An extreme ultraviolet light generation apparatus includes a chamber device, a concentrating mirror, an exhaust port, and a central gas supply port. The exhaust port is formed at the chamber device and is formed on the side lateral to a focal line and opposite to the reflection surface with respect to the plasma generation region. The central gas supply port is formed on the side opposite to the exhaust port with respect to the plasma generation region on the supply line passing through the exhaust port, the plasma generation region, and an inner side of a peripheral portion of the reflection surface. The central gas supply port supplies the gas toward the exhaust port along the supply line through the plasma generation region.

A radiation source apparatus includes a vessel, a laser source, a collector, a horizontal obscuration bar, and a reflective mirror. The vessel has an exit aperture. The laser source is configured to emit a laser beam to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to reflect the collected radiation to the exit aperture of the vessel. The horizontal obscuration bar extends from a sidewall of the vessel at least to a position between the laser source and the exit aperture of the vessel. The reflective mirror is in the vessel and connected to the horizontal obscuration bar.

An extreme ultra violet (EUV) lithography method includes receiving an EUV light by a scanner from an EUV light source, the EUV light passing through an intermediate focus disposed in the scanner and at a junction of the EUV light source and the scanner; directing the EUV light by the scanner to a reticle in the scanner; and deflecting nanoparticles from the EUV light source away from the reticle by generating a gas flow using a gas jet disposed entirely in the scanner and proximate to an interface of the scanner and the intermediate focus such that the gas jet does not block the EUV light.