A laser-produced plasma X-ray system includes a liquid metal flow system enclosed within a low-pressure chamber, the flow system including a liquid metal, wherein in at least one location on the liquid metal forms a metal target beam, a circulation pump within the flow system for circulating the liquid metal, a laser pulse emitter configured to transmit a plurality of laser pulses into the chamber via a laser window, focusing optics, located between the emitter and the metal target beam, the focusing optics directing the laser pulses to strike the metal target beam at a target location to form X-ray pulses, and an X-ray window positioned within the chamber to allow the X-ray pulses to exit the chamber.

A tin trap device may include a housing including a gas inlet port into which gas containing tin flows from a chamber device, an internal space which communicates with the gas inlet port, and a gas exhaust port which exhausts the gas while communicating with the internal space; a multiple tube including a plurality of tube members, arranged on a flow path of the gas traveling to the gas exhaust port from the gas inlet port through the internal space, and having a temperature at which the tin deposited from the gas adheres to the tube member; and a gas travel direction changing member configured to change a travel direction of at least fastest gas of the gas traveling from the gas inlet port to the multiple tube.

A modular laser-produced plasma X-ray system includes a liquid metal flow system enclosed within a low-pressure chamber, the flow system including a liquid metal, wherein in at least one location on the liquid metal forms a metal target directly illuminated by laser pulses, a circulation pump within the liquid metal flow system for circulating the liquid metal, a laser pulse emitter configured to transmit laser pulses into the chamber via a laser window, focusing optics, located between the emitter and the metal target, the focusing optics directing the laser pulses to strike the metal target at a target location to form X-ray pulses, and an X-ray window positioned within the chamber to enable the X-ray pulses to exit the chamber.

In accordance with some embodiments, a method of controlling an extreme ultraviolet (EUV) radiation in lithography system is provided. The method includes generating a plurality of target droplets. The method also includes generating a pre-pulse and a main pulse from an excitation laser module to generate EUV light and reflecting the EUV light by a collector mirror. The method further includes measuring a separation between a pre-pulse and a main pulse. Moreover, the method includes determining whether the separation between the pre-pulse and the main pulse in the y-axis is changed, if not adjusting a configurable parameter of the excitation laser module to set the variation in the energy of the EUV light within an acceptable range.

A laser produced plasma light source comprises a vacuum chamber with a rotating target assembly supplying a target into an interaction zone with focused laser beam. The target is layer of a fluid and/or free-flowing target material on a surface of annular groove in the rotating target assembly. An output beam of short-wavelength radiation exits the interaction zone to an optical collector through the means for debris mitigation. A linear velocity of the target is not less than 100 m/s and a vector of the linear velocity of the target in the interaction zone is directed on one side of a plane passing through the interaction zone and the rotation axis while the focused laser beam and the output beam are located on another side of said plane. The optical collector comprises two ellipsoidal mirror units arranged in a tandem.

A deoxidation system for purifying target material for an EUV light source includes a furnace having a central region and a heater for heating the central region in a uniform manner. A vessel is inserted in the central region of the furnace, and a crucible is disposed within the vessel. A closure device covers an open end of the vessel to form a seal having vacuum and pressure capability. The system also includes a gas input tube, a gas exhaust tube, and a vacuum port. A gas supply network is coupled in flow communication with an end of the gas input tube and a gas supply network is coupled in flow communication with an end of the gas exhaust tube. A vacuum network is coupled in flow communication with one end of the vacuum port. A method and apparatus for purifying target material also are described.

An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. A deformable mirror is disposed in a path of the excitation laser. A controller is configured to adjust parameters of the excitation laser by controlling the deformable mirror based on a feedback parameter.

An extreme ultraviolet light generation apparatus includes a chamber including a plasma generation region; a target supply unit configured to supply a target to the plasma generation region; a laser light concentrating mirror configured to concentrate pulse laser light on the plasma generation region; and an EUV light concentrating mirror having a reflection surface reflecting extreme ultraviolet light radiated from the plasma generation region, and arranged such that the reflection surface falls within an angle range in which ion energy is less than an average value of the ion energy in a spatial distribution of the ion energy of ions diffused from the plasma generation region at positions of a predetermined distance from the plasma generation region.

A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

An extreme ultraviolet light generation apparatus includes a target supply unit, a target passage detection device, a delay circuit, a laser device, a target image capturing device, and a processor. Here, the processor controls the vibrating element so that an interval between the adjacent droplet targets becomes irregular, specifies the droplet targets with which standard deviation of a distance from the second detection position to each droplet target is equal to or less than a first threshold, and sets the delay time based on a distance from each of the specified droplet targets to the second detection position so that the specified droplet targets are to be located at the second detection position.