A target supply device may include a first containing member configured to contain a target substance; a second containing member configured to contain the target substance flowing from the first containing member; a ring-shaped sealing portion which is formed integrally with one of the first containing member and the second containing member, and is brought into close contact with the other containing member; and a fastening member which fastens the first containing member and the second containing member to each other so that the first containing member communicates with the second containing member through the communication portion, and presses the sealing portion against the other containing member. Here, the sealing portion being plastically deformed by being pressed against the other containing member by the fastening member to seal a gap between the first containing member and the second containing member around the communication portion due to the plastic deformation.

A droplet accelerating assembly includes an acceleration chamber extending in a first direction parallel to an ejection direction of the droplet, the acceleration chamber having a first side connected to the droplet generator, a second side opposite the first side in the first direction, the second side including a discharge hole, and a fluid flow path, a pressure controller connected to the fluid flow path of the acceleration chamber, the pressure controller being configured to adjust an internal pressure of the acceleration chamber, an electrifier in the acceleration chamber, the electrifier being configured to electrify the droplet ejected by the droplet generator into an electrified droplet, and an accelerator in the acceleration chamber, the accelerator being configured to accelerate the electrified droplet.

A stop is configured to be arranged in a constriction of an EUV illumination light beam between an EUV light source for EUV illumination light and an EUV illumination optical unit. The stop has a beam entrance section, a beam exit section and an intervening beam tube section. The entrance section has a cross section that decreases in the propagation direction of the EUV illumination light beam. The cross section of the exit section increases in the propagation direction. The cross section of the tube section is constant. An inner wall of the beam tube section is embodied as reflective for the EUV illumination light. The result is a stop that can have a defined predetermination of the illumination light beam in conjunction with a good thermal loading capacity of the stop.

An extreme ultraviolet light generation apparatus includes a chamber device, a concentrating mirror, an exhaust port, and a central gas supply port. The exhaust port is formed at the chamber device and is formed on the side lateral to a focal line and opposite to the reflection surface with respect to the plasma generation region. The central gas supply port is formed on the side opposite to the exhaust port with respect to the plasma generation region on the supply line passing through the exhaust port, the plasma generation region, and an inner side of a peripheral portion of the reflection surface. The central gas supply port supplies the gas toward the exhaust port along the supply line through the plasma generation region.

A method includes dispensing a droplet into a vacuum chamber; firing a pre-pulse laser to the droplet; sensing a first image of a return beam of the pre-pulse laser from the droplet; after firing the pre-pulse laser, firing a main-pulse laser to the droplet, wherein when the main-pulse laser hits the droplet, the droplet is vaporized into a plasma that emits extreme ultraviolet radiation; after sensing the first image and firing the main-pulse laser, sensing a second image of a return beam of the main-pulse laser from the droplet; and adjusting a plasma position in the vacuum chamber according to at least the second image.

An extreme ultra violet (EUV) lithography method includes receiving an EUV light by a scanner from an EUV light source, the EUV light passing through an intermediate focus disposed in the scanner and at a junction of the EUV light source and the scanner; directing the EUV light by the scanner to a reticle in the scanner; and deflecting nanoparticles from the EUV light source away from the reticle by generating a gas flow using a gas jet disposed entirely in the scanner and proximate to an interface of the scanner and the intermediate focus such that the gas jet does not block the EUV light.

The present disclosure is directed to a device having a nozzle for dispensing a liquid target material; one or more intermediary chamber(s), each intermediary chamber positioned to receive target material and formed with an exit aperture to output target material for downstream irradiation in a laser produced plasma (LPP) chamber. In some disclosed embodiments, control systems are included for controlling one or more of gas temperature, gas pressure and gas composition in one, some or all of a device's intermediary chamber(s). In one embodiment, an intermediary chamber having an adjustable length is disclosed.

The present inventive concept relates to an X-ray source comprising: a liquid target source configured to provide a liquid target moving along a flow axis; an electron source configured to provide an electron beam; and a liquid target shaper configured to shape the liquid target to comprise a non-circular cross section with respect to the flow axis, wherein the non-circular cross section has a first width along a first axis and a second width along a second axis, wherein the first width is shorter than the second width, and wherein the liquid target comprises an impact portion being intersected by the first axis; wherein the x-ray source is configured to direct the electron beam towards the impact portion such that the electron beam interacts with the liquid target within the impact portion to generate X-ray radiation.

A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.

Provided is an apparatus that includes a first reservoir system including a first fluid reservoir configured to be in fluid communication with a nozzle supply system during operation of the nozzle supply system, a second reservoir system including a second fluid reservoir configured to be, at least part of the time during operation of the nozzle supply system, in fluid communication with the first reservoir system, a priming system configured to produce a fluid target material from a solid matter, and a fluid control system fluidly connected to the priming system, the first reservoir system, the second reservoir system, and the nozzle supply system. The fluid control system is configured to, during operation of the nozzle supply system: isolate at least one fluid reservoir and the nozzle supply system from the priming system, and maintain a fluid flow path between at least one fluid reservoir and the nozzle supply system.