A superconducting radio frequency (SRF) cell includes a body defining a hollow cavity having a first iris at a first end of the body, a second iris at a second end of the body, an axis that extends between the first and second irises and an equator around the axis between the first and second irises. The body includes a first weld seam around the axis at a location on the body spaced from the equator. A method for producing the SRF cavity includes: (a) providing a first-partial cell including a first cell welding edge; (b) providing a second-partial cell including a second cell welding edge; (c) positioning the first- and second-partial cells with the first and second cell welding edges facing toward each other; and (d) welding the first- and second-partial cells together at a position other than the equator of the body.

A system and method for the in situ processing of internal SRF cavity surfaces to reduce field emission and improve maximum gradient. An electromagnetic radiation source is introduced in the bore of a superconducting cavity to enhance ionization or dissociation of gases which then remove contaminants from the surface of the cavity, either through direct surface bombardment, chemical reaction or through the production of radiation which interacts with the contaminants. An RF or low frequency electromagnetic field may be established in the cavity which further enhances the ionization or dissociation process and may cause the ions to bombard sites with enhanced electric fields. The invention removes the requirement that the RF field be sufficient by itself to ionize gas in the cavity.

A system and method for the in situ processing of internal SRF cavity surfaces to reduce field emission and improve maximum gradient. An electromagnetic radiation source is introduced in the bore of a superconducting cavity to enhance ionization or dissociation of gases which then remove contaminants from the surface of the cavity, either through direct surface bombardment, chemical reaction or through the production of radiation which interacts with the contaminants. An RF or low frequency electromagnetic field may be established in the cavity which further enhances the ionization or dissociation process and may cause the ions to bombard sites with enhanced electric fields. The invention removes the requirement that the RF field be sufficient by itself to ionize gas in the cavity.

A system is described that includes a sputter target and a magnetic element array including multiple sets of magnets arranged to have a Hall-Effect region that extends along a length of the sputter target. The elongated sputtering electrode material tube is interposed between the magnetic array and an object to be deposited with a sputtered material from the sputter target. During a direct current high-power impulse magnetron sputtering operation, the system performs a depositing on a surface of the object by generating and controlling an ion and neutral particle flux by: providing a vacuum apparatus containing a sputter target holder electrode; first generating a high-power pulsed plasma magnetron discharge with a high-current negative direct current (DC) pulse to the sputter a target holder electrode; and second generating a configurable positive voltage kick pulse to the sputter target holder electrode after terminating the negative DC pulse.

A system and method for treating a cavity comprises arranging a niobium structure in a coating chamber, the coating chamber being arranged inside a furnace, coating the niobium structure with tin thereby forming an Nb.sub.3Sn layer on the niobium structure, and doping the Nb.sub.3Sn layer with nitrogen, thereby forming a nitrogen doped Nb.sub.3Sn layer on the niobium structure.

A system and method for treating a cavity comprises arranging a niobium structure in a coating chamber, the coating chamber being arranged inside a furnace, coating the niobium structure with tin thereby forming an Nb.sub.3Sn layer on the niobium structure, and doping the Nb.sub.3Sn layer with nitrogen, thereby forming a nitrogen doped Nb.sub.3Sn layer on the niobium structure.

A method and system for automatically tuning hollow structures, can include pressurized balloons located in one or more targeted cells of a hollow structure of a device having a hollow structures and respective cells. A pressurized balloon can be inserted into a targeted cell so as to localize plastic deformation to the targeted cell using prescribed values of global force and balloon pressure. A pair of inflate/deflate rods associated with an independent air supply for the pressurized balloon can inflate or deflate the pressurized balloon without affecting other pressurized balloons. The pair of inflate/deflate rods can be automatically insertable or removable from the hollow structure by controlled motorized motions.

A method and system for automatically tuning hollow structures, can include pressurized balloons located in one or more targeted cells of a hollow structure of a device having a hollow structures and respective cells. A pressurized balloon can be inserted into a targeted cell so as to localize plastic deformation to the targeted cell using prescribed values of global force and balloon pressure. A pair of inflate/deflate rods associated with an independent air supply for the pressurized balloon can inflate or deflate the pressurized balloon without affecting other pressurized balloons. The pair of inflate/deflate rods can be automatically insertable or removable from the hollow structure by controlled motorized motions.

The method for determining a quality factor of an accelerating superconducting cavity of a particle accelerator, in particular a linear particle accelerator, the method includes

determining a heat load to which a cryomodule having the accelerating cavity and a bath of cryogenic fluid is subjected, then

determining a quality factor based on the determination of the heat load during the operation of the particle accelerator.

A system and method for treating a cavity comprises preparing a superconducting radio frequency (SRF) cavity for removal of a dielectric layer from on an inner surface of the SRF cavity, subjecting the SRF cavity to a heat treatment in order to remove the dielectric layer from the inner surface of the SRF cavity, and preventing the development of a new dielectric layer on the inner surface of the SRF cavity by preventing an interaction between the inner surface of the SRF cavity and atmospheric gasses.