The present disclosure relates to an electronic component, a voltage regulation module and a voltage stabilizer. The electronic component may include a substrate, a first electronic element and a second electronic element. The substrate may be provided with a first surface and a second surface that are opposite to each other. The first electronic element may be embedded in the substrate, and may be provided with a first electrical connection terminal and a second electrical connection terminal. The first electrical connection terminal may connect with a first surface of the substrate, the second electrical connection terminal may connect with a second surface of the substrate. The second electronic element may be arranged on the second surface of the substrate and electrically connected to the second electrical connection terminal. The second electronic element may form a stack with the substrate along the first direction.

Systems including power device embedded PCBs coupled to cooling devices and methods of forming the same are disclosed. One system includes a power device embedded PCB stack, a cooling assembly including a cold plate having one or more recesses therein, and a buffer cell disposed within each of the one or more recesses. The cooling assembly is bonded to the PCB stack with a insulation substrate disposed therebetween. The cooling assembly is arranged such that the buffer cell faces the PCB stack and absorbs stress generated at an interface of the PCB stack and the cooling assembly.

A method for manufacturing a packaging substrate, and a packaging substrate are disclosed. The method includes: providing a bottom board with a first circuit layer, the first circuit layer being provided with at least one demand point, and one side of the demand point being provided with a first to-be-avoided region; machining a first intermediate insulating layer on the bottom board, the first intermediate insulating layer including a first intermediate insulating dielectric covering the first to-be-avoided region; machining a first intermediate wiring layer on the first intermediate insulating layer, the first intermediate wiring layer including a first intermediate circuit partially arranged on the first intermediate insulating dielectric and connected to the demand point; machining a first insulating layer on the first intermediate wiring layer which is stacked on the bottom board and covers the first intermediate wiring layer; and machining a circuit build-up layer on the first insulating layer.

A component carrier includes a stack including at least one electrically conductive layer structure and at least one electrically insulating layer structure and a component connected to the stack. The component has a planar redistribution layer at a main surface thereof.

A component-embedded substrate includes: a plurality of insulating layers each including a wiring pattern formed on one surface; an embedded component including a connection terminal; and a plurality of vias that electrically connect the connection terminal to the wiring patterns adjacent to each other in a lamination direction. The plurality of insulating layers is laminated on the connection terminal. Each of the plurality of vias is composed of a via hole formed in the respective insulating layer of the plurality of the insulating layers and a conductive material provided in the via hole. One of the plurality of vias is a connection via directly connected to the connection terminal. Another of the plurality of vias is a first adjacent via adjacent to the connection via in the lamination direction. The first adjacent via is connected to the wiring pattern formed on a surface of a top insulating layer.

A substrate is described with a thermal dissipation structure sintered to thermal vias. In one example, a microelectronic module includes a recess between first and second substrate surfaces. One or more thermal vias extend between the first substrate surface and the interior recess surface, wherein each of the thermal vias has an interior end exposed at the interior recess surface. A sintered metal layer is in the recess and in physical contact with the interior end of the thermal vias and a thermal dissipation structure is in the recess over the sintered metal layer. The thermal dissipation structure is attached to the substrate within the recess by the sintered metal layer, and the thermal dissipation structure is thermally coupled to the thermal vias through the sintered metal layer.

A method for fabricating a semiconductor package includes: providing a semiconductor wafer having opposing first and second sides, the semiconductor wafer being arranged on a first carrier such that the second side of the wafer faces the carrier; masking sawing lines on the first side of the semiconductor wafer with a mask; depositing a first metal layer on the masked first side of the semiconductor wafer by cold spraying or by high velocity oxygen fuel spraying or by cold plasma assisted deposition, such that the first metal layer does not cover the sawing lines, the deposited first metal layer having a thickness of 50 μm or more; singulating the semiconductor wafer into a plurality of semiconductor dies by sawing the semiconductor wafer along the sawing lines; and encapsulating the plurality of semiconductor dies with an encapsulant such that the first metal layer is exposed on a first side of the encapsulant.

A package substrate according to an embodiment includes a first substrate; and a first chip mounted on the first substrate; wherein the first substrate includes: a first insulating layer including a first region overlapping the first chip in a vertical direction and a second region other than the first region; and a circuit pattern disposed on the first region and the second region of the first insulating layer; wherein the circuit pattern includes: a pad portion including a first portion disposed on an upper surface of the second region of the first insulating layer, a second portion buried in the first region of the first insulating layer, and a third portion including at least a part buried in the first region of the first insulating layer and connecting between the first portion and the second portion; wherein at least a part of the first chip is disposed in the first region of the first insulating layer; wherein the first region of the first insulating layer surrounds a lower surface and a side surface of the first chip, and wherein the first region and the second region of the first insulating layer are a single insulating layer.

A component built-in substrate includes a multilayer body and a substrate including a multilayer ceramic electronic component embedded therein. The multilayer ceramic electronic component includes a first connection portion that protrudes from the first external electrode, and a second connection portion that protrudes from the second external electrode. The substrate includes a core material. The multilayer ceramic electronic component including the first connection portion and the second connection portion includes a surface covered by the core material and embedded in the substrate. The first connection portion protrudes toward a surface of the substrate, and is not exposed at the surface of the substrate. The second connection portion protrudes toward the surface of the substrate, and is not exposed at the surface of the substrate.

An integrated circuit chip carrier includes a wall surrounding a cavity. The wall includes one or more levels where each level is formed from a layer of a resin around a block. The block is made of a material different from the resin. The block is removed to open the cavity.