An etching device includes a nozzle unit including at least one nozzle including an etching solution injection hole, an etching solution collection hole, and a sealing part. The etching solution injection hole is configured to provide an etching solution to an etching object, the etching solution collection hole is configured to collect the etching solution, and the sealing part surrounds the etching solution injection hole and the etching solution collection hole to prevent the etching solution from leakage.

The present invention discloses a carrying device, a wet etching apparatus and a usage method thereof. The carrying device comprises a carrying body and a heating unit both disposed under a to-be-processed substrate, the carrying body is used for carrying the to-be-processed substrate such that the to-be-processed substrate is placed inclined; the heating unit is used for heating the to-be-processed substrate, such that temperature of the to-be-processed substrate rises gradually from a top portion to a bottom portion thereof. In the technical solution of the present invention, by disposing the heating unit under the to-be-processed substrate, the temperature of the to-be-processed substrate rises gradually from the top portion to the bottom portion thereof, thus etch rate of the etchant on the bottom portion of the to-be-processed substrate can be increased, and uniformity of etch rate in the inclined wet etching process is improved.

A Cu-interconnection etching device includes an etching liquid tank containing therein an etching liquid that is a hydrogen peroxide based solution, a first concentration monitoring device receiving the etching liquid from the etching liquid tank and measuring a copper ion concentration of the etching liquid. The etching liquid is supplied through a filter assembly that filters off copper ions contained in the etching liquid so as to provide a filtered etching liquid. The filter etching liquid is supplied through a second concentration monitoring device that measures a copper ion concentration of the filtered etching liquid and conducts the filtered etching liquid back to the etching liquid tank. A variation between the measurements of the first and second concentration monitoring devices is used to control the operation of the filter assembly in order to maintain a proper level of copper ion concentration in the etching liquid.

The present invention relates to a process of oxidizing copper in a copper etching solution by using oxygen gas and/or air as an oxidizing agent, the process comprising the steps of: a) introducing the oxidizing agent into an acidic reduced copper etching solution comprising Cl.sup. and Cu.sup.+, b) stirring the solution obtained in step a), and thereby allowing the reaction 2Cu.sup.++O.sub.2 (aq)+2H.sup.+.fwdarw.2Cu.sup.2++H.sub.2O to occur, thereby producing an oxidized copper etching solution comprising less Cu.sup.+ than the reduced copper etching solution. An advantage of the present invention is that it provides an improved process at least in terms of the speed of the oxidation and the quality of the etching.

There are provided a circuit board, a method for manufacturing a circuit board, and an etching device capable of suppressing side etching and suppressing a takt time even when etching is performed on a thick workpiece. An etching device includes a conveyance means that conveys a workpiece, a spray pipe that extends along a conveyance direction of the workpiece by the conveyance means and feeds an etching solution, a plurality of spray nozzles capable of injecting the etching solution to the workpiece and provided in the spray pipe in a row in the conveyance direction, and a movement means that is capable of moving the spray pipe in a conveyance orthogonal direction orthogonal to the conveyance direction, and moves the spray pipe so that the etching solution injected from the spray nozzles is sprayed to the workpiece over the entire predetermined region in the conveyance orthogonal direction.

The present invention relates to a substrate edge etching apparatus including: a substrate support assembly having a horizontally rotatable chuck base, chuck pins disposed on top of the chuck base to support a substrate, a purge gas inlet hole extending from an underside center of the chuck base to an interior of the chuck base in an upward and downward direction thereof, and a purge gas outlet hole extending radially from the purge gas inlet hole and then extending upwardly to penetrate top of the chuck base; a purge gas supply assembly for supplying a purge gas to the purge gas inlet hole; a chemical liquid supply unit for supplying a chemical liquid to top of the substrate; a bowl assembly having bowls surrounding the periphery of the substrate support assembly and configured to be able to ascend and descend; and a fan filter unit spaced apart from top of the substrate support assembly.

A method includes: transferring a wafer from a factory interface through a load lock chamber to a buffer chamber; transferring the wafer from the buffer chamber to a process chamber; etching the wafer in the process chamber, to remove a material of the wafer; and after the wafer is etched, performing reflectance measurements to the wafer in the factory interface, the load lock chamber, the buffer chamber, or combination thereof, to identify if the material of the wafer is removed entirely according to a reflectance of the wafer.

A method includes: transferring a wafer from a factory interface through a load lock chamber to a buffer chamber; transferring the wafer from the buffer chamber to a process chamber; etching the wafer in the process chamber, to remove a material of the wafer; and after the wafer is etched, performing reflectance measurements to the wafer in the factory interface, the load lock chamber, the buffer chamber, or combination thereof, to identify if the material of the wafer is removed entirely according to a reflectance of the wafer.