A semiconductor device structure includes a first chip including a plurality of dielectric layers and a multi-layered metal structure embedded in the plurality of dielectric layer, a second chip bonded to the first chip to generate a bonding interface and including a metal structure, a first via structure extending through the first chip and crossing the bonding interface into the metal structure in the second chip, and a second via structure extending in the first chip and electrically connected to the multi-layered metal structure in the first chip. The first via structure further includes a first via metal and a first via dielectric layer, the first via dielectric layer interposes between the first via metal and the plurality of dielectric layers of the first chip and extends from the first chip to the metal structure in the second chip.

A semiconductor device structure includes a first chip including a plurality of dielectric layers and a multi-layered metal structure embedded in the plurality of dielectric layer, a second chip bonded to the first chip to generate a bonding interface and including a metal structure, a first via structure extending through the first chip and crossing the bonding interface into the metal structure in the second chip, and a second via structure extending in the first chip and electrically connected to the multi-layered metal structure in the first chip. The first via structure further includes a first via metal and a first via dielectric layer, the first via dielectric layer interposes between the first via metal and the plurality of dielectric layers of the first chip and extends from the first chip to the metal structure in the second chip.

A method of manufacturing a printed circuit board includes providing an insulating layer, forming a plating seed layer on the insulating layer, forming a first circuit pattern on the plating seed layer and a second circuit pattern on the first circuit pattern, and forming a top metal layer on the second circuit pattern. The second circuit pattern can be thinner than the first circuit pattern, and the top metal layer can be wider than the second circuit pattern.

Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second through holes, a first metal film provided on one surface of the capacitive insulating film, and a second metal film provided on the other surface of the capacitive insulating film. The first and second metal films are made of different metal materials from each other. The first metal film is divided into a first area positioned outside the first space and a second area positioned inside the first space. The second metal film is divided into a third area positioned outside the second space and a fourth area positioned inside the second space. The third area is connected to the second area through the first through hole. The fourth area is connected to the first area through the second through hole.

A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.

A multilayer wiring board that improves the reliability of connection at a via hole connection portion, and a method for producing the multilayer wiring board. In a multilayer wiring board comprising a plurality of metal wiring layers alternately laminated with insulating layers interposed therebetween are electrically connected to each other via a via hole plated layer, wherein a dissimilar metallic layer, made from material different from that of the metal wiring layers, is interposed between each of the metal wiring layers on the bottom surface of the via hole and the via hole plated layer, and the dissimilar metallic layer interposed between the each of the metal wiring layers on the bottom surface of the via hole and the via hole plated layer is arranged in a concave shape on the surface of the concave portion formed in the metal wiring layer on the bottom surface of the via hole.

Disclosed are highly scalable fabrication methods for producing electronic circuits, devices, and systems. In one aspect, a fabrication method includes attaching an electronic component at a location on a substrate including a flexible and electrically insulative material; forming a template to encase the electronic component by depositing a material in a phase to conform on the surfaces of the electronic component and the substrate, and causing the material to change to solid form; and producing a circuit or electronic device by forming openings in the substrate to expose conductive portions of the electronic component, creating electrical interconnections coupled to at least some of the conductive portions in a selected arrangement on the substrate, and depositing a layer of an electrically insulative and flexible material over the electrical interconnections on the substrate to form a flexible base of the circuit, in which the produced circuit or electronic device is encased.

Disclosed are highly scalable fabrication methods for producing electronic circuits, devices, and systems. In one aspect, a fabrication method includes attaching an electronic component at a location on a substrate including a flexible and electrically insulative material; forming a template to encase the electronic component by depositing a material in a phase to conform on the surfaces of the electronic component and the substrate, and causing the material to change to solid form; and producing a circuit or electronic device by forming openings in the substrate to expose conductive portions of the electronic component, creating electrical interconnections coupled to at least some of the conductive portions in a selected arrangement on the substrate, and depositing a layer of an electrically insulative and flexible material over the electrical interconnections on the substrate to form a flexible base of the circuit, in which the produced circuit or electronic device is encased.

A substrate structure includes an insulating material layer, a build-up circuit layer, a patterned conductive layer, and at least one damming protrusion. The insulating material layer has a first surface and a second surface opposite the first surface. The build-up circuit layer is disposed on the second surface. The patterned conductive layer is embedded in the insulating material layer and exposed on the first surface of the insulating material layer, and is electrically connected to the build-up circuit layer. The damming protrusion is disposed on the first surface of the insulating material layer and integrally formed with the insulating material layer. A manufacturing method of the above substrate structure is also provided.

A method of manufacturing a component carrier includes providing a laminated stack with at least one electrically conductive layer structure and/or at least one electrically insulating layer structure, at least partially covering a component with a transition layer having a thickness in a range from 0.5 nm to 1 ?m, and assembling the component with the stack.