Patent classifications
H05K2201/0187
Semiconductor device, circuit board structure and manufacturing method thereof
A semiconductor device, a circuit board structure and a manufacturing forming thereof are provided. A circuit board structure includes a core layer, a first build-up layer and a second build-up layer. The first build-up layer and the second build-up layer are disposed on opposite sides of the core layer. The circuit board structure has a plurality of stress releasing trenches extending into the first build-up layer and the second build-up layer.
INDUCTOR BUILT-IN SUBSTRATE
An inductor built-in substrate includes a core substrate having an opening and a first through hole formed therein, a magnetic resin filling the opening and having a second through hole formed therein, a first through-hole conductor including a metal film formed in the first through hole, and a second through-hole conductor including a metal film formed in the second through hole. The core substrate and the magnetic resin are formed such that a surface in the first through hole has a roughness that is larger than a roughness of a surface in the second through hole.
Shielded package assemblies with integrated capacitor
Package assemblies including a die stack and related methods of use. The package assembly includes a substrate with a first surface, a second surface, and a third surface bordering a through-hole extending from the first surface to the second surface. The assembly further includes a die stack, a conductive layer, and a lid. The die stack includes a chip positioned inside the through-hole in the substrate. A section of the conductive layer is disposed on the third surface of the substrate. A portion of the lid is disposed between the first chip and the section of the conductive layer. The conductive layer is configured to be coupled with power, and the lid is configured to be coupled with ground. The portion of the lid may act as a first plate of a capacitor, and the section of the conductive layer may act as a second plate of the capacitor.
RESIN SUBSTRATE AND METHOD FOR MANUFACTURING RESIN SUBSTRATE
A resin substrate includes an insulating base material including opposing first and second main surfaces, at least one of which is parallel or substantially parallel to each of an X-axis direction and a Y-axis direction. The insulating base material is divided into first and second sections arranged in the X-axis direction. The first section includes, when evenly divided into three in a Z-axis direction, a first region closest to the first main surface, a second region closest to the second main surface, and a third region between the first region and the second region. A degree of resin molecular orientation in the first region in the Y-axis direction is greater than a degree of resin molecular orientation in the second section of the insulating base material in the Y-axis direction.
Printed circuit board and package having the same
A printed circuit board including: a laminate having a plurality of stacked insulating layers including a rigid insulating layer; a flexible insulating layer having a partial region that overlaps and is in contact with at least one of the insulating layers and a remaining region disposed outside of the laminate; and a first antenna disposed on a surface of the laminate.
INTERCONNECT STACK WITH LOW-K DIELECTRIC
Embodiments may relate to a microelectronic package with an interconnect stack that includes a cavity therein. The cavity may include a dielectric material with a dielectric value less than 3.9. The microelectronic package may further include first and second conductive elements in the cavity, with the dielectric material positioned therebetween. Other embodiments may be described or claimed.
INTERCONNECT SUBSTRATE HAVING BUFFER MATERIAL AND CRACK STOPPER AND SEMICONDUCTOR ASSEMBLY USING THE SAME
An interconnect substrate includes a lower-modulus buffer material disposed around a thermally conductive base and a higher-modulus crack stopper disposed over the buffer material. By the difference of the elastic modulus between the crack stopper and the buffer material, thermo-mechanical induced stress can be absorbed in the buffer material, and crack propagation would be arrested by the crack stopper to ensure reliability of a routing trace which is deposited on the crack stopper and electrically coupled to vertical connecting elements in the buffer material. Further, the crack stopper can have low dissipation factor to ensure a lower rate of energy loss which is beneficial to high frequency applications.
INDUCTOR BUILT-IN SUBSTRATE
An inductor built-in substrate includes a core substrate having openings and first through holes formed therein, a magnetic resin filling the openings and having second through holes formed therein, first through-hole conductors formed in the first through holes respectively such that each of the first through-hole conductors includes an electroless plating film and an electrolytic plating film, and second through-hole conductors formed in the second through holes respectively such that each of the second through-hole conductors includes an electroless plating film and an electrolytic plating film. The first through-hole conductors and the second through-hole conductors are formed such that a thickness of the electroless plating film in the first through-hole conductors is larger than a thickness of the electroless plating film in the second through-hole conductors.
INDUCTOR BUILT-IN SUBSTRATE
An inductor built-in substrate includes a core substrate having an opening and a first through hole formed therein, a magnetic resin filling the opening formed in the core substrate such that the magnetic resin has second through holes formed therein, a first through-hole conductor formed in the first through hole of the core substrate and including a metal film formed in the first through hole of the core substrate, and second through-hole conductors formed in the second through holes of the magnetic resin and including metal films formed in the second through holes of the magnetic resin, respectively.
VIBRATION-DAMPED CIRCUIT ARRANGEMENT, CONVERTER, AND AIRCRAFT HAVING SUCH AN ARRANGEMENT
The invention relates to a circuit arrangement, comprising at least one wiring carrier plate (1), characterized by at least one separating element (2) formed in the wiring carrier plate (1), which separating element divides the wiring carrier plate (1) into sections separated by the separating element (2), wherein the transfer of vibrations from one section to another section is at least partially decoupled and/or damped by the separating element (2). The invention further relates to a converter having such a circuit arrangement, and to an aircraft having a converter. The converter can comprise capacitor stacks (3) arranged on the wiring carrier plate (1), and power semiconductors (6).