A method for producing a high frequency circuit board includes forming an antenna pattern on an upper surface of the provisional substrate. The method includes performing hot-press in a state where a thermoplastic resin and a provisional conductor are stacked on the upper surface of the provisional substrate, to form a first dielectric layer portion covering the antenna pattern. The method includes removing the provisional conductor and shaving the first dielectric layer portion to form a cavity to house an electronic component. The method includes mounting the electronic component on the antenna pattern in the cavity. The method includes performing hot-press in a state where a thermosetting resin and a ground conductor are stacked at an opening side of the cavity in the first dielectric layer portion, to form a second dielectric layer portion to embed the electronic component in the cavity. The method includes removing the provisional substrate.

An ear-worn electronic device is configured to be worn by a wearer and comprises a housing configured to be supported at, by, in or on the wearer's ear. A processor is disposed in the housing. A speaker or a receiver is operably coupled to the processor. A radio frequency transceiver is disposed in the housing and operably coupled to the processor. An antenna is disposed on or in the housing and operably coupled to the transceiver. The antenna comprises a radiating element, a ground plane, and a substrate disposed between the radiating element and the ground plane. The substrate comprises one or both of a dielectric gel and a dielectric liquid.

A bulk substrate for stretchable electronics. The bulk substrate is manufactured with a process that forms a soft-elastic region of the bulk substrate. The soft-elastic region includes a strain capacity of greater than or equal to 25% and a first Young's modulus below 10% of a maximum local modulus of the bulk substrate. The process also forms a stiff-elastic region of the bulk substrate. The stiff-elastic region includes a strain capacity of less than or equal to 5% and a second Young's modulus greater than 10% of the maximum local modulus of the bulk substrate.

A semiconductor device, a circuit board structure and a manufacturing forming thereof are provided. A circuit board structure includes a core layer, a first build-up layer and a second build-up layer. The first build-up layer and the second build-up layer are disposed on opposite sides of the core layer. The circuit board structure has a plurality of stress releasing trenches extending into the first build-up layer and the second build-up layer.

A stretchable substrate according to an embodiment of the present invention comprises a first modulus region which has a first modulus, a second modulus region which is located in a plane direction with respect to the first modulus region and has a second modulus higher than the first modulus, and a third modulus region which is located between the first modulus region and the second modulus region and has an interface modulus which gradually changes between the first modulus and the second modulus, wherein the interface modulus of the third modulus region may be constant in the thickness direction thereof.

A hybrid microelectronic substrate may be formed by the incorporation of a high density microelectronic patch substrate within a lower density microelectronic substrate. The hybrid microelectronic substrate may allow for direct flip chip attachment of a microelectronic device having high density interconnections to the high density microelectronic patch substrate portion of the hybrid microelectronic substrate, while allowing for lower density interconnection and electrical routes in areas where high density interconnections are not required.

The present disclosure provides a power module, a chip-embedded package module and a manufacturing method of the chip-embedded package module. The chip-embedded package module includes: a chip having a first surface and a second surface that are disposed oppositely; a first plastic member including a first cover portion and a first protrusion; and a second plastic member including a second cover portion and a second protrusion. A height difference discontinuous interface structure is formed between the top surface of the second protrusion and the second surface of the chip, which cuts off a passage for expansion of delamination at an edge position of the chip, thereby effectively suppressing generation of the delamination.

A method of creating thermal boundaries in a substrate is provided. The method includes forming the substrate with first and second sections to be in direct thermal communication with first and second thermal elements, respectively, machining, in the substrate, first and second cavities for defining a third section of the substrate between the first and second sections and disposing a material having a characteristic thermal conductivity that is substantially less than that of the ceramic in the first and second cavities.

A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.

Provided are a functional contactor and a portable electronic device comprising same. A functional contactor, according to an embodiment of the present invention, comprises: an elastic conductor which electrically comes in contact with a conductor of an electronic device; a functional element which is connected to the elastic conductor and has a first electrode and a second electrode on at least one part of the lower side and the upper side, respectively; a first testing electrode which is connected to the first electrode and is provided on the upper side of the functional element and a fixed distance away from the second electrode; and a second testing electrode which is connected to the second electrode and is provided on the upper side of the functional element.