Integrated multilayer structure suitable for use in sensing applications is disclosed including at least one plastic layer, at least one film layer provided on both sides of the plastic layer. A film layer on a first side of the plastic layer includes electronics incorporating reactance sensing electronics for sensing of selected target quantities, and conversion thereof into representative electrical signals. The sensing electronics include an electrode and a connection element for connecting the electrode to control circuitry. A film layer on a second side of the plastic layer includes features including one conductive feature that is configured to shape an electromagnetic field to adapt a sensitivity or directionality the sensing response of the sensing electronics on the first side of the plastic layer.

Semiconductor layers useable for minimizing or preventing the growth of metal whiskers, as well as devices and methods utilizing the same and kits for making the same, are described.

A method for manufacturing a flexible circuit electrode array, comprising: a) depositing a metal trace layer containing a base coating layer, a conducting layer and a top coating layer on the insulator polymer base layer; b) applying a layer of photoresist on the metal trace layer and patterning the metal trace layer and forming metal traces on the insulator polymer base layer; c) activating the insulator polymer base layer and depositing a top insulator polymer layer and forming one single insulating polymer layer with the base insulator polymer layer; d) applying a thin metal layer and a layer of photoresist on the surface of the insulator polymer layer and selective etching the insulator layer and the top coating layer to obtain at least one via; and e) filling the via with electrode material.

A layer of polymer is laid down. A layer of metal is applied to the polymer and patterned to create electrodes and leads for those electrodes. A second layer of polymer is applied over the metal layer and patterned to leave openings for the electrodes, or openings are created later by means such as laser ablation. Hence the array and its supply cable are formed of a single body. Alternatively, multiple alternating layers of metal and polymer may be applied to obtain more metal traces within a given width.

The method provides an excellent adhesion between the polymer base layer and the polymer top layer and insulation of the trace metals and electrodes.

A circuitized structure with a 3-dimensional configuration. A base structure is provided that includes an insulating substrate of electrically insulating material with a flat configuration, and further includes an electric circuit including at least one layer of electrically conductive material arranged on the insulating substrate. The insulating material includes a thermosetting material being partially cured by stopping a cure thereof at a B-stage before reaching a gel point. The base structure is formed according to the 3-dimensional configuration, and the cure of the thermosetting material is completed.

A circuit board comprising a substrate and a circuit trace. The substrate includes a surface etched via ion milling over a circuit area such that the surface has an increased roughness. The circuit trace forms portions of an electronic circuit and may be created from a thin conductive film deposited on the surface within the circuit area. The circuit trace adheres more strongly to the roughened substrate surface, which prevents the circuit trace from peeling or becoming delaminated from the substrate surface.

A circuit board comprising a substrate and a circuit trace. The substrate includes a surface etched via ion milling over a circuit area such that the surface has an increased roughness. The circuit trace forms portions of an electronic circuit and may be created from a thin conductive film deposited on the surface within the circuit area. The circuit trace adheres more strongly to the roughened substrate surface, which prevents the circuit trace from peeling or becoming delaminated from the substrate surface.

A component carrier for carrying and cooling at least one heat generating electronic component is presented. The component carrier comprising includes an outer layer structure, an electrically insulating layer arranged adjacent to the outer layer structure, and a heat conducting structure arranged adjacent to the electrically insulating layer on a side opposite to the outer layer structure. The heat conducting structure is thermally coupled to the at least one heat generating electronic component such that the outer layer structure receives thermal radiation irradiated by the heat conducting structure and transports corresponding heat away from the component carrier via convection by a heat transfer medium surrounding the component carrier.

A method for manufacturing a flexible circuit electrode array adapted to electrically communicate with organic tissue including the following steps: a) providing a flexible polymer base layer; b) curing the base layer; c) depositing a metal layer on base layer; d) patterning the metal layer and forming metal traces on the base layer; e) roughening the surface of the base layer; f) chemically reverting the cure of the surface of the base layer; g) depositing a flexible polymer top layer on the surface of the base layer and the metal traces; h) curing the top layer and the surface of the base layer forming one single flexible polymer layer; and i) creating openings through the single layer to the metal trace layer.

The present specification relates to a conductive structure body and a method for manufacturing the same.

A method for producing a metal foil comprising depositing metal onto an oxidizable substrate to form a metal film on the substrate; oxidizing the substrate at an interface between the metal film and the substrate; and removing the metal film from the substrate to yield a metal foil. A method for forming a thin metal film comprising pre-polarizing a single-crystal Si substrate by application of a potential which is negative of a potential at which Si oxidizes, which pre-polarization occurs in the presence of metal ions to form metal growth nucleation sites on the substrate, followed by application of a potential at which both oxidation of Si and electrodeposition of the metal occur to grow the metal film and oxidize the Si to SiOx, which potential is more positive than the potential applied in the pre-polarization step.