A wiring device including a first printed circuit board (PCB) that includes a first direct current (DC) output port and a second DC output port. The wiring device further includes a second PCB electrically connected with the first PCB, the second PCB including a planar transformer integrated with a surface of the second PCB and configured to output power at one or more DC voltage levels, a switch connected to the planar transformer, and a microcontroller. The microcontroller includes an electronic processor and is configured to control delivery of power from the planar transformer to at least one of the first DC output port and the second DC output port using the switch. The switch may have a Gallium Nitride (GaN) chemistry or a Silicon Carbide (SiC) chemistry.

Provided is a MOSFET device for use with a printed circuit board (PCB) of a battery management system (BMS), the device including a semiconductor body; a metal conductor extending outwardly from a side of the semiconductor body; a plurality of power pins extending outwardly from at least one side of the semiconductor body, the power pins having tips bent downwardly; a gate pin extending outwardly from at least one side of the semiconductor body, wherein the tip of the gate pin is raised or elevated relative to the tips of the power pins so as to avoid electrical contact with the one of the spaced apart copper plates, and wherein the tip of the gate pin is connected to a circuit of the battery management system (BMS).

A single circuit board assembly for forming a vehicle-motor interface, the single circuit board assembly includes a first side of a board with logic modules located thereon. The single circuit board assembly also includes a second side of the board with power modules located thereon. The board comprises a plurality of layers, the plurality of layers having at least one through via and at least one buried via defined therein, wherein the at least one through via extends through all of the plurality of layers, the at least one buried via extending through less than all of the plurality of layers.

A method for forming a silicon carbide module integrated structure includes a heat sink and a silicon carbide module, which is fixedly connected with the heat sink. The solder paste is arranged between the heat sink and the silicon carbide module, and the heat sink and the silicon carbide module are hot pressed through a welding process to weld the silicon carbide module and the heat sink together.

A magnetic element includes a first magnetic column, a second magnetic column, a first winding wound around the first magnetic column, and a second winding wound around the second magnetic column. The first winding includes a first horizontal winding, a second horizontal winding, a first vertical winding, and a second vertical winding. The second winding includes a third horizontal winding, a fourth horizontal winding, a third vertical winding, and a fourth vertical winding. The first vertical winding and the third vertical winding are disposed on or in a first circuit board and a second circuit board respectively, the second vertical winding and the fourth vertical winding are disposed on or in a third circuit board. The first circuit board, the first magnetic column, the third circuit board, the second magnetic column, and the second circuit board are sequentially bonded to form a pre-package.

A power supply voltage terminal and a ground terminal having a rectangular cross section are respectively connected to a first terminal hole of a power supply pattern and a second terminal hole of a ground pattern. An inductor is surface-mounted on a substrate, and has a rectangular parallelepiped shape in which an input end connected to a power supply pattern and an output end connected to a power supply relay face each other. A first electrode terminal of a capacitor is connected to the power supply pattern, a second electrode terminal is connected to the ground pattern, and constitutes a filter circuit together with the inductor. A wall surface of an input end of the inductor is arranged parallel to the longitudinal axis direction (x direction) of the first terminal hole. The inductor opposes the first terminal hole so as to include the entire length Wh of the first terminal hole within the width Wt of the input end in the x direction.

A component carrier includes a stack having at least one electrically conductive layer structure and/or at least one electrically insulating layer structure. A component is embedded in the stack. A first thermally conductive block is located above and thermally connected with the component, and a second thermally conductive block is located below and thermally coupled with the component. Heat generated by the component during operation is removed via at least one of the first thermally conductive block and the second thermally conductive block.

In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.

A printed circuit board comprises N power switching cells operating in parallel and respectively comprising a transistor leg, at least one decoupling capacitor and a gate driver circuit. Each transistor leg comprises respective first and second transistors in series, a drain of the first transistor being connected to a positive DC line, a source of the second transistor being connected to a negative DC line, a source of the first transistor being connected to a drain of the second through a connection middle-point connected to an output terminal. Each gate driver circuit controls respective switching ON and OFF of the corresponding first and second transistors. The N transistor legs of the corresponding N power switching cells are positioned to substantially form a convex polygon having N edges of substantially the same length, each one of the N transistor legs being positioned along one of the edges of the convex polygon.

An illustrative example embodiment of an antenna device includes a substrate, a plurality of antenna elements supported on the substrate, an integrated circuit supported on one side of the substrate, and a metallic waveguide antenna situated against the substrate. The metallic waveguide antenna includes a heat dissipation portion in a thermally conductive relationship with the integrated circuit. The heat dissipation portion is configured to reduce a temperature of the integrated circuit.