An intermediate connection layer interposed between a wiring substrate and an electronic part includes a rigid substrate and a flexible substrate. A plurality of conductor portions are formed on opposed principal surfaces of the respective flexible and rigid substrates. The rigid substrate is provided with an opening, and a fuse portion on the flexible substrate faces the opening. The flexible substrate and the rigid substrate are bonded together with solders. The respective rigid and flexible substrates are separately made, solder pastes are applied to the rigid substrate, both substrates are overlaid on each other, and the solder pastes are heated and solidified to make the intermediate connection layer.

An integrated silicone for protecting electronic devices includes a base resin, a thermal initiator, and a photoinitiator.

A fuse holder includes a holder base comprising a plurality of protrusions each having a mounting hole formed therein to provide for mounting of the holder base to an external component and one or more mating protrusions and one or more mating slots formed on each of opposing side surfaces. The fuse holder also includes an input stud coupled to or formed on the holder base and a cover configured to attach to the holder base to at least partially enclose one or more fuses positionable on the fuse holder. The one or more mating protrusions and the one or more mating slots formed on each of the opposing side surfaces of the holder base comprise dovetailed protrusions and slots of a matching profile capable of receiving such a dovetailed protrusion, so as to enable a side-by-side stacking and interlocking of fuse holders with such mating protrusions and mating slots.

A three-dimensional (3D) inductor structure comprising: a first semiconductor die including: a first conductive pattern; and a second conductive pattern spaced apart from the first conductive pattern; a second semiconductor die stacked on the first semiconductor die, the second semiconductor die including: a third conductive pattern; a fourth conductive pattern spaced apart from the third conductive pattern; a first through-substrate via (TSV) penetrating the second semiconductor die and electrically connecting the first conductive pattern with the third conductive pattern; and a second TSV penetrating the second semiconductor die and electrically connecting the second conductive pattern with the fourth conductive pattern, and a first conductive connection pattern included in the first semiconductor die and electrically connecting a first end of the first conductive pattern with a first end of the second conductive pattern, or included in the second semiconductor die and electrically connecting a first end of the third conductive pattern with a first end of the fourth conductive pattern.

A method for increasing the protection range of a thermal fuse, which includes the following steps: disposing the thermal fuse on a circuit board including a circuit loop, a first heat generating element and a second heat generating element; the second heat generating element is electrically connected to the circuit loop; electrically connecting the first heat generating element to the circuit loop; and disposing the heat conducting material on the circuit loop and making the heat conducting material cover the thermal fuse, the first heat generating element and the second heat generating element.

A thermal fuse having a bow, which has a first end with a first soldering surface for soldering to a first contact surface of a printed circuit board and a second end with a second soldering surface for soldering to a second contact surface of the printed circuit board, a tensioning element, which is secured to the bow between the first and the second end and which is designed to press with a preload against the bow and the printed circuit board once the two soldering surfaces and the contact surfaces of a printed circuit board have been soldered, wherein a portion of the bow, between the two ends thereof, has a measuring resistor connected in series to the two soldering surfaces. A printed circuit board having such a thermal fuse is additionally described.

A chip part includes a substrate, a first electrode and a second electrode which are formed apart from each other on the substrate and a circuit network which is formed between the first electrode and the second electrode. The circuit network includes a first passive element including a first conductive member embedded in a first trench formed in the substrate and a second passive element including a second conductive member formed on the substrate outside the first trench.

The present disclosure is directed to a ceramic substrate that includes a plurality of contact pads, a plurality of electrical traces, and a microelectromechanical die. Contacts on the die are coupled to the plurality of contact pads through the plurality of electrical traces. The substrate also includes a plurality of memory bits formed directly on the substrate. Each memory bit is coupled between a first one of the contact pads and a second one of the contact pads.

Described is a distributed battery management system that utilizes circuit boards as direct current busses for primary power in large-scale battery energy storage systems.

Aspects of the present disclosure provide miniaturized isolator modules capable of transferring power and/or data signals across an isolation barrier by way of a transformer while maintaining intrinsic safety (IS) compliance. For example, the isolator modules may provide power from a non-IS side to an IS side of the isolation barrier while protecting the IS side in the event of an overvoltage and/or overcurrent event on the non-IS side. In some aspects, an isolator module includes one or more silicon protection devices, which facilitate the miniaturization of the isolator module while maintaining protection against overvoltage and/or overcurrent events in accordance with IS standards. In some aspects, an isolator module includes a transformer adapted for IS compliance. For example, coils of the transformer may be disposed on opposing sides of an isolation barrier having a thickness of at least 200 microns. Some aspects provide silicon protection devices formed on a single semiconductor die for use with miniaturized isolator modules to provide overvoltage and/or overcurrent protection for IS compliance. Miniaturized isolator modules and protection devices described herein may be used either alone or in combination, in IS or non-IS environments.