Patent classifications
H05K2201/10234
ELECTRONIC DEVICE COMPRISING AN ELECTRONIC COMPONENT MOUNTED ON A SUPPORT SUBSTRATE AND ASSEMBLY METHOD
A support substrate has first electric contacts in a front face. An electronic component is located above the front face of the support substrate and has second electric contacts facing the first electric contacts of the support substrate. An electric connection structure is interposed between corresponding first and second electric contacts of the support substrate and the electronic component, respectively. Each electric connection structure is formed by: a shim that is made of a first electrically conducting material, and a coating that is made of a second electrically conducting material (different from the first electrically conducting material). The coating surrounds the shim and is in contact with the corresponding first and second electric contacts of the support substrate and the electronic component.
COMPOSITE SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF
A composite substrate structure includes a circuit substrate, a first anisotropic conductive film, a first glass substrate, a dielectric layer, a patterned circuit layer and a conductive via. The first anisotropic conductive film is disposed on the circuit substrate. The first glass substrate is disposed on the first anisotropic conductive film and has a first surface and a second surface opposite to the first surface. The first glass substrate includes a first circuit layer, a second circuit layer and at least one first conductive via. The first circuit layer is disposed on the first surface. The second circuit layer is disposed on the second surface. The first conductive via penetrates the first glass substrate and is electrically connected to the first circuit layer and the second circuit layer. The first glass substrate and the circuit substrate are respectively located on two opposite sides of the first anisotropic conductive film.
Semiconductor device, electronic device, method of manufacturing semiconductor device, and method of manufacturing electronic device
A semiconductor device includes a printed circuit board that includes a first electrode, a resin substrate that includes a first face directed toward the printed circuit board, a second electrode formed in a second portion surrounding a first portion of the first face, a second face opposite the first face, and a third electrode formed in a third portion of the second face, the third portion overlapping the first portion in a plan view, a semiconductor chip that includes a coupling terminal joined to the third electrode, a conductive member that is formed between the printed circuit board and the resin substrate and contains a conductive particle and resin, and a solder bump that is formed between the printed circuit board and the resin substrate and is joined to the first electrode and the second electrode.
Stacked structure and method for manufacturing the same
A stacked structure includes a circuit board, an electronic component, metallic cores, and insulating cladding layers. The circuit board includes first bonding pads. The electronic component includes second bonding pads that are opposite to the first bonding pads. Each metallic core is connected to a corresponding first bonding pad and a corresponding second bonding pad. The metallic cores have a curved surface interposed between the corresponding first bonding pad and the corresponding second bonding pad. The insulating cladding layers are separated from each other and cover the curved surfaces of the metallic cores.
ULTRA LOW-COST, LOW LEADTIME, AND HIGH DENSITY SPACE TRANSFORMER FOR FINE PITCH APPLICATIONS
Space transformation technology for probe cards at sort is disclosed. In one example, a space transformer transforms a pitch of electrical contacts from a first distribution to a second distribution. The space transformer comprises a substrate with opposite first and second sides; and vias extending through the substrate between the first and second sides and oriented at different angles with respect to one another. In one example, a tester system or probe card for a die comprises a printed circuit board (PCB) with pads having a pad pitch; and a space transformer operatively coupled to the PCB, and having vias extending from the pads of the PCB through the space transformer at different angles with respect to one another and configured to electrically connect to contacts on the die having a contact pitch different than the pad pitch.
DEVICES AND METHODS RELATED TO NESTED FILTERS
Devices and methods related to nested filters. In some embodiments, a radio-frequency device can include a substrate, and first and second filter devices mounted on the substrate with respective support structures, such that at least a portion of the second filter device is positioned in a space defined by an underside of the first filter device and the support structures for the first filter device. Such a radio-frequency device can be, for example, a packaged module for use in an electronic device such as a wireless device.
Device containing and method of providing carbon covered copper layer
A device and method of preventing corrosion of a copper layer in a PCB is disclosed. A first dielectric is disposed on a substrate. A copper layer is plated in an opening in the first dielectric and, after conditioning the copper layer, a redistribution layer is plated on the copper layer. A solder resist layer is disposed above the copper layer. A solder ball is disposed in an opening in the solder resist layer. The solder ball is in conductive contact with the copper layer and in physical contact with the redistribution layer. A non-conductive carbon layer is disposed on and in contact with the redistribution layer or tsi-diehe solder resist layer. The carbon layer is substantially thinner than the copper layer and acts as a diffusion barrier to moisture for the copper layer.
POGO MODULE AND ELECTRONIC DEVICE COMPRISING SAME
Various embodiments relating to a pogo module comprising a pogo pin for maintaining an electrical connection state when an electronic device is rotated and not rotated are disclosed, and according to one embodiment, the pogo module comprises: first and second housings; module circuit boards provided inside the first and second housings; at least one pogo pin provided to the module circuit board and comprising a rotatable structure electrically connected to at least one electrode pattern included in a printed circuit board of the electronic device; and a support body coupled to the module circuit board to support the at least one pogo pin, wherein the rotatable structure can maintain an electrical connection state with the at least one electrode pattern when the electronic device is rotated or not rotated. In addition, various other embodiments are possible.
DEVICE CONTAINING AND METHOD OF PROVIDING CARBON COVERED COPPER LAYER
A device and method of preventing corrosion of a copper layer in a PCB is disclosed. A first dielectric is disposed on a substrate. A copper layer is plated in an opening in the first dielectric and, after conditioning the copper layer, a redistribution layer is plated on the copper layer. A solder resist layer is disposed above the copper layer. A solder ball is disposed in an opening in the solder resist layer. The solder ball is in conductive contact with the copper layer and in physical contact with the redistribution layer. A non-conductive carbon layer is disposed on and in contact with the redistribution layer or tsi-diehe solder resist layer. The carbon layer is substantially thinner than the copper layer and acts as a diffusion barrier to moisture for the copper layer.
CORE MATERIAL, ELECTRONIC COMPONENT AND METHOD FOR FORMING BUMP ELECTRODE
A core material has a core 12; a solder layer 16 made of a (SnBi)-based solder alloy provided on an outer side of the core 12; and a Sn layer 20 provided on an outer side of the solder layer 16. The core contains metal or a resin. When a concentration ratio of Bi contained in the solder layer 16 is a concentration ratio (%)=a measured value of Bi (% by mass)/a target Bi content (% by mass), or a concentration ratio (%)=an average value of measured values of Bi (% by mass)/a target Bi content (% by mass), the concentration ratio is 91.4% to 106.7%. The thickness of the Sn layer 20 is 0.215% or more and 36% or less of the thickness of the solder layer 16.