An integrated circuit package may be formed having a heat transfer fluid chamber, wherein the heat transfer fluid chamber may be positioned to allow a heat transfer fluid to directly contact an integrated circuit device within the integrated circuit package. In one embodiment, a first surface of the integrated circuit device may be electrically attached to a first substrate. The first substrate may then may be electrically attached to a second substrate, such that the integrated circuit device is between the first substrate and the second substrate. The second substrate may include a cavity, wherein the heat transfer fluid chamber may be formed between a second surface of the integrated circuit device and the cavity of the second substrate. Thus, at least a portion of a second surface of the integrated circuit device is exposed to the heat transfer fluid which flows into the heat transfer fluid chamber.

An interposer of a multilayer ceramic capacitor includes a first through-hole in which a first pass-through conductive portion is provided on an inside wall thereof. A first surface side of the first through-hole is filled with a first conductive joining material that recessed at a central portion thereof as the first through-hole is seen from a second surface toward a first surface. The interposer includes a second through-hole in which a second pass-through conductive portion is provided on an inside wall thereof. A first surface side of the second through-hole is filled with a second conductive joining material that is recessed at a central portion thereof as the second through-hole is seen from a second surface toward a first surface.

A current path is provided through an interposer to ground a grounding pattern associated with a transmission line, by exploiting an interposer substrate that has a high-resistivity portion at a first surface and a low-resistivity portion extending from the high-resistivity portion to a second surface of the interposer. Moreover, a set of blind via-holes comprising electrically-conductive material extend from the first surface of the interposer substrate through the high-resistivity portion and into the low-resistivity portion. Top-to-bottom connection can be made using the conductive material in the blind vias and using the low-resistivity portion of the substrate, while the high-resistivity portion of the substrate impedes current leakage from the transmission line to the second surface of the substrate. The number and dimensions of the blind via-holes control the impedance of the grounding pattern relative to the transmission line's characteristic impedance.

Embodiments of the invention include dielectric waveguides and connectors for dielectric waveguides. In an embodiment a dielectric waveguide connector may include an outer ring and one or more posts extending from the outer ring towards the center of the outer ring. In some embodiments, a first dielectric waveguide secured within the dielectric ring by the one or more posts. In another embodiment, an enclosure surrounding electronic components may include an enclosure wall having an interior surface and an exterior surface and a dielectric waveguide embedded within the enclosure wall. In an embodiment, a first end of the dielectric waveguide is substantially coplanar with the interior surface of the enclosure wall and a second end of the dielectric waveguide is substantially coplanar with the exterior surface of the enclosure wall.

The present application discloses a semiconductor device with an interface structure and a method for fabricating the interface structure. The interface structure includes an interface board configured to be fixed onto and electrically coupled to a chuck of a testing equipment, and a first object positioned on a first surface of the interface board and electrically coupled to the interface board. The first object is configured to be analyzed by the testing equipment.

A PCB structure and a method and apparatus for forming the PCB structure are disclosed. The PCB structure further includes a metal plate configured between a first PCB and a second PCB by soldering. Therefore, the PCB structure is easy to be produced and the feasibility can be improved with a cheap solution.

According to an aspect of the disclosure, an example microelectronic device assembly includes a substrate, a microelectronic element electrically connected to the substrate, a stiffener element overlying the substrate, and a heat distribution device overlying the rear surface of the microelectronic element. The stiffener element may extend around the microelectronic element. The stiffener element may include a first material that has a first coefficient of thermal expansion (“CTE”). A surface of the stiffener element may face toward the heat distribution device. The heat distribution device may include a second material that has a second CTE. The first material may be different than the second material. The first CTE of the first material of the stiffener element may be greater than the second CTE of the second material of the heat distribution device.

An electronic device includes a housing, a first substrate, a second substrate, and an interposer disposed between the first substrate and the second substrate and configured to electrically connect the first substrate and the second substrate. The interposer includes a substrate, a first surface, a second surface, and a side surface. The interposer further includes a plurality of first conductive pads, a plurality of second conductive pads, a plurality of conductive posts, a plurality of third conductive terminals at least partially exposed on the first surface and electrically connected to the plurality of first conductive pads via a first conductive via (CV), and a plurality of fourth conductive terminals at least partially exposed on the second surface and electrically connected to the plurality of second conductive pads via a second CV.

A semiconductor package assembly includes a circuit board, a heat dissipating element and a semiconductor device. The circuit board includes a conductive pattern. The heat dissipating element is located on the circuit board, where the heat dissipating element is connected to the conductive pattern. The semiconductor device is located on the circuit board and next to the heat dissipating element, where the semiconductor device is thermally connected to the heat dissipating element through the conductive pattern.

A semiconductor device includes a semiconductor chip, an insulated circuit substrate including an insulating board and a circuit pattern on the insulating board electrically connected to the semiconductor chip, and a wiring member having a leg portion bonded to the circuit pattern. The leg portion includes a vertical portion, a first divided portion, and a second divided portion. The vertical portion extends in a vertical direction orthogonal to a plane of the circuit pattern, and has a split end provided at a side of the vertical portion at which the circuit pattern is disposed. The first divided portion extends from the split end in a first direction parallel to the plane of the circuit pattern and is bonded to the circuit pattern. The second divided portion extends from the split end in a second direction opposite the first direction and is bonded to the circuit pattern.