In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.

In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.

There is provided a copper foil provided with a carrier exhibiting a high peeling resistance against the developer in the photoresist developing process and achieving high stability of mechanical peel strength of the carrier. The copper foil provided with a carrier comprises a carrier; an interlayer disposed on the carrier, the interlayer having a first surface adjacent to the carrier and containing 1.0 atom % or more of at least one metal selected from the group consisting of Ti, Cr, Mo, Mn, W and Ni and a second surface remote from the carrier and containing 30 atom % or more of Cu; a release layer disposed on the interlayer; and an extremely-thin copper layer disposed on the release layer.

A device includes an interposer, which includes a substrate; and at least one dielectric layer over the substrate. A plurality of through-substrate vias (TSVs) penetrate through the substrate. A first metal bump is in the at least one dielectric layer and electrically coupled to the plurality of TSVs. A second metal bump is over the at least one dielectric layer. A die is embedded in the at least one dielectric layer and bonded to the first metal bump.

Embodiments relate to placing light emitting diodes from a carrier substrate to a target substrate. At least one LED is embedded in a polymer layer on a substrate. The polymer layer is etched between the at least one LED and the substrate. A thickness of the polymer layer is monitored during etching of the polymer layer. The etching of the polymer layer is terminated responsive to determining that the thickness of the polymer layer is in a target range or a target value. A pick-up-tool (PUT) is brought into contact with at least one surface of the at least one LED facing away from the substrate responsive to dry-etching the polymer layer, and the PUT is lifted with the at least one LED attached to the PUT.

The present invention relates to a method for producing a metal wire embedded flexible substrate from a laminate structure. The laminate structure includes a carrier substrate, a debonding layer disposed on at least one surface of the carrier substrate and including a polyimide resin, a metal wiring layer disposed in contact with the debonding layer, and a flexible substrate layer disposed in contact with the metal wiring layer. The adhesion strength between the metal wiring layer and the flexible substrate layer is greater than that between the metal wiring layer and the debonding layer. According to the method of the present invention, the flexible substrate with the metal wiring layer can be easily separated from the carrier substrate even without the need for other processes, such as laser and light irradiation. The embedding of the metal wires in the flexible substrate layer decreases the sheet resistance of an electrode and can protect the metal wires from damage or disconnection even when the flexible substrate is deformed in shape.

An electronic device display may have pixels formed from crystalline semiconductor light-emitting diode dies, organic light-emitting diodes, or other pixel structures. The pixels may be formed on a display panel substrate. A display panel may extend continuously across the display or multiple display panels may be tiled in two dimensions to cover a larger display area. Interconnect substrates may have outwardly facing contacts that are electrically shorted to corresponding inwardly facing contacts such as inwardly facing metal pillars associated with the display panels. The interconnect substrates may be supported by glass layers. Integrated circuits may be embedded in the display panels and/or in the interconnect substrates. A display may have an active area with pixels that includes non-spline pixels in a non-spline display portion located above a straight edge of the display and spline pixel in a spline display portion located above a curved edge of the display.

A circuit carrier board structure includes a first substrate, a second substrate, an adhesive layer, and a plurality of contact pads. The first substrate includes a first surface and a second surface, and also includes a plurality of first build-up layers sequentially stacked. The first build-up layers include a first dielectric layer and a first circuit layer. The second substrate includes a third surface and a fourth surface, and also includes a plurality of second build-up layers sequentially stacked. The second build-up layers include a second dielectric layer and a second circuit layer. The second surface is combined to the third surface. The connection pads are on the first surface and electrically connected to the first circuit layer. The first substrate is electrically connected to the second substrate. A manufacturing method of the circuit carrier board structure is also provided.

A device includes an interposer, which includes a substrate; and at least one dielectric layer over the substrate. A plurality of through-substrate vias (TSVs) penetrate through the substrate. A first metal bump is in the at least one dielectric layer and electrically coupled to the plurality of TSVs. A second metal bump is over the at least one dielectric layer. A die is embedded in the at least one dielectric layer and bonded to the first metal bump.

There is provided a copper foil provided with a carrier exhibiting a high peeling resistance against the developer in the photoresist developing process and achieving high stability of mechanical peel strength of the carrier. The copper foil provided with a carrier comprises a carrier; an interlayer disposed on the carrier, the interlayer having a first surface adjacent to the carrier and containing 1.0 atom % or more of at least one metal selected from the group consisting of Ti, Cr, Mo, Mn, W and Ni and a second surface remote from the carrier and containing 30 atom % or more of Cu; a release layer disposed on the interlayer; and an extremely-thin copper layer disposed on the release layer.