A retinomorphic sensor is demonstrated employing organic semiconductors. The sensor produces an output voltage in response to changes in illumination, but zero output voltage under constant illumination. The device is stable for periods up to one hour, exhibits a decay constant tunable through choice of external resistor, with fastest response times below 10 μs.

Disclosed are an apparatus for and a method of manufacturing a semiconductor device. The apparatus includes a chamber, an evaporator that evaporates an organic source to provide a source gas on a substrate in the chamber, a vacuum pump that pumps the source gas and air from the chamber, an exhaust line between the vacuum pump and the chamber, and an analyzer connected to the exhaust line. The analyzer detects a derived molecule produced from the organic source and determines a replacement time of the evaporate

A static ternary gate is disclosed. The static ternary gate includes a drain-ground path configured to output a drain voltage through a first transistor when a first pull-up circuit is turned on, and output a ground voltage through a second transistor when a first pull-down circuit is turned on, a half-drain path configured to output a half-drain voltage through the first transistor and the second transistor when both a second pull-up circuit and a second pull-down circuit are turned on. The first transistor is configured to connect a node between the first pull-up circuit and the second pull-down circuit to an output terminal, and the second transistor is configured to connect a node between the second pull-up circuit and the first pull-down circuit to the output terminal.

A carbon nanotube field effect transistor (CNFET), that has a channel formed of carbon nanotubes (CNTs), includes a layered deposit of a nonstoichiometric doping oxide (NDO), such as HfO.sub.X, where the concentration of the NDO varies through the thickness of the layer(s). An n-type metal-oxide semiconductor (NMOS) CNFET made in this manner can achieve similar ON-current, OFF-current, and/or threshold voltage magnitudes to a corresponding p-type metal-oxide semiconductor (PMOS) CNFET. Such an NMOS and PMOS can be used to achieve a symmetric complementary metal-oxide semiconductor (CMOS) CNFET design.

The present disclosure relates to structures and methods of quantum devices. A quantum device comprises a substrate with an insulation surface and at least one quantum component disposed on the insulation surface of the substrate. The at least one quantum component may comprise multiple plateau members and at least one quantum dot. Each plateau member is disposed at an angle against an adjacent plateau member. Each quantum dot is formed within an insulation body and disposed at an included-angle location of two adjacent plateau members of the multiple plateau members. In addition, the at least one quantum component is operable under high temperature, such as above 4 K.

Embodiments described herein provide thin film transistors (TFTs) and processes to reduce plasma induced damage in TFTs. In one embodiment, a buffer layer is disposed over a substrate and a semiconductor layer is disposed over the buffer layer. A gate dielectric layer is disposed over the semiconductor layer. The gate dielectric layer contacts the semiconductor layer at an interface. The gate electrode 204 is disposed over the gate dielectric layer. The gate dielectric layer has a D.sub.it of about 5e.sup.10 cm.sup.−2eV.sup.−1 to about 5e.sup.11 cm.sup.−2eV.sup.−1 and a hysteresis of about 0.10 V to about 0.30 V improve performance capability of the TFT while having a breakdown field between about 6 MV/cm and about 10 MV/cm.

The invention relates to compounds of formula (1) which are suitable for use in electronic devices, and to electronic devices, in particular organic electroluminescent devices, containing said compounds.

A field effect transistor (FET), a method of fabricating the field effect transistor, and an electronic device are provided. The field effect transistor comprises: a source and a drain, the source being made of a Dirac material (103); a channel disposed between the source and the drain, and doped opposite to the source; and a gate (106) disposed on the channel and electrically insulated from the channel.

Embodiments described herein provide thin film transistors (TFTs) and processes to reduce plasma induced damage in TFTs. In one embodiment, a buffer layer is disposed over a substrate and a semiconductor layer is disposed over the buffer layer. A gate dielectric layer is disposed over the semiconductor layer. The gate dielectric layer contacts the semiconductor layer at an interface. The gate electrode is disposed over the gate dielectric layer. The gate dielectric layer has a D.sub.it of about 5e.sup.10 cm.sup.−2 eV.sup.−1 to about 5e.sup.11 cm.sup.−2 eV.sup.−1 and a hysteresis of about 0.10 V to about 0.30 V improve performance capability of the TFT while having a breakdown field between about 6 MV/cm and about 10 MV/cm.

Provided is an organic transistor material characterized by having a trans-1,4-disubstituted cyclohexane structure derived from a compound represented by Formula (1). In Formula (1), X represents a skeleton in which plural phenylene groups or naphthylene groups are linked directly or via a vinyl group, a condensed polycyclic hydrocarbon skeleton, or a heterocyclic compound skeleton; m, n, p, and q each independently represent 0 or 1; and R1 and R2 each independently represent an alkyl group or haloalkyl group having 1 to 15 carbon atoms. This organic transistor material has high carrier mobility and excellent thermal stability.

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